JPS62126362U - - Google Patents
Info
- Publication number
- JPS62126362U JPS62126362U JP16943986U JP16943986U JPS62126362U JP S62126362 U JPS62126362 U JP S62126362U JP 16943986 U JP16943986 U JP 16943986U JP 16943986 U JP16943986 U JP 16943986U JP S62126362 U JPS62126362 U JP S62126362U
- Authority
- JP
- Japan
- Prior art keywords
- support stand
- workpiece
- gas
- chamber
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 4
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第1図及び第2図は従来のプラズマCVD装置
の概念図、第3図は本考案のプラズマCVD装置
の概念図である。
1:コイル結合型プラズマCVD装置、2,1
0:真空槽、3,20:高周波誘導コイル、4,
16:支持台、5,15:被処理物、12:ノズ
ル、13:排気口、14:発熱体。
1 and 2 are conceptual diagrams of a conventional plasma CVD apparatus, and FIG. 3 is a conceptual diagram of a plasma CVD apparatus of the present invention. 1: Coil-coupled plasma CVD device, 2, 1
0: Vacuum chamber, 3, 20: High frequency induction coil, 4,
16: Support stand, 5, 15: Processed object, 12: Nozzle, 13: Exhaust port, 14: Heat generating element.
Claims (1)
ガス圧に調節して導入するガス導入系とその排気
系を配管してなる真空槽と、該槽内に設けられた
被処理物を支持する負の電位に保たれた支持台と
、支持台ほ載置される被処理物を加熱するために
被処理物を囲繞するように支持台近傍に配置した
発熱体と、前記ガス導入系に近接し、かつ、真空
槽内に露出して配置された高周波放電により励起
するコイル状の電極とから構成したことを特徴と
する化学蒸着装置。 A vacuum chamber consisting of a gas introduction system and an exhaust system for introducing atmospheric gas and reaction gas into the chamber by adjusting the flow rate ratio and gas pressure to a predetermined flow rate ratio and gas pressure, and supporting the workpiece installed in the chamber. a support stand maintained at a negative potential, a heating element disposed near the support stand to surround the workpiece to heat the workpiece placed on the support stand; A chemical vapor deposition apparatus comprising a coil-shaped electrode excited by high-frequency discharge, which is placed adjacent to the electrode and exposed in a vacuum chamber.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986169439U JPH0111721Y2 (en) | 1986-11-04 | 1986-11-04 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1986169439U JPH0111721Y2 (en) | 1986-11-04 | 1986-11-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62126362U true JPS62126362U (en) | 1987-08-11 |
JPH0111721Y2 JPH0111721Y2 (en) | 1989-04-06 |
Family
ID=31103250
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1986169439U Expired JPH0111721Y2 (en) | 1986-11-04 | 1986-11-04 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0111721Y2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006274390A (en) * | 2005-03-30 | 2006-10-12 | Yamaguchi Prefecture | SiNxOyCz FILM, AND THIN FILM DEPOSITION METHOD |
JP2012152732A (en) * | 2011-01-26 | 2012-08-16 | 秉豊 ▲頼▼ | Plasma reaction method and plasma reaction device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53144891A (en) * | 1977-05-25 | 1978-12-16 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for production of inorganic compound |
JPS5488016U (en) * | 1977-11-30 | 1979-06-21 |
-
1986
- 1986-11-04 JP JP1986169439U patent/JPH0111721Y2/ja not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53144891A (en) * | 1977-05-25 | 1978-12-16 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for production of inorganic compound |
JPS5488016U (en) * | 1977-11-30 | 1979-06-21 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006274390A (en) * | 2005-03-30 | 2006-10-12 | Yamaguchi Prefecture | SiNxOyCz FILM, AND THIN FILM DEPOSITION METHOD |
JP2012152732A (en) * | 2011-01-26 | 2012-08-16 | 秉豊 ▲頼▼ | Plasma reaction method and plasma reaction device |
Also Published As
Publication number | Publication date |
---|---|
JPH0111721Y2 (en) | 1989-04-06 |
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