JPS62126362U - - Google Patents

Info

Publication number
JPS62126362U
JPS62126362U JP16943986U JP16943986U JPS62126362U JP S62126362 U JPS62126362 U JP S62126362U JP 16943986 U JP16943986 U JP 16943986U JP 16943986 U JP16943986 U JP 16943986U JP S62126362 U JPS62126362 U JP S62126362U
Authority
JP
Japan
Prior art keywords
support stand
workpiece
gas
chamber
flow rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16943986U
Other languages
Japanese (ja)
Other versions
JPH0111721Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986169439U priority Critical patent/JPH0111721Y2/ja
Publication of JPS62126362U publication Critical patent/JPS62126362U/ja
Application granted granted Critical
Publication of JPH0111721Y2 publication Critical patent/JPH0111721Y2/ja
Expired legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図及び第２図は従来のプラズマＣＶＤ装置
の概念図、第３図は本考案のプラズマＣＶＤ装置
の概念図である。 １：コイル結合型プラズマＣＶＤ装置、２，１
０：真空槽、３，２０：高周波誘導コイル、４，
１６：支持台、５，１５：被処理物、１２：ノズ
ル、１３：排気口、１４：発熱体。 1 and 2 are conceptual diagrams of a conventional plasma CVD apparatus, and FIG. 3 is a conceptual diagram of a plasma CVD apparatus of the present invention. 1: Coil-coupled plasma CVD device, 2, 1
0: Vacuum chamber, 3, 20: High frequency induction coil, 4,
16: Support stand, 5, 15: Processed object, 12: Nozzle, 13: Exhaust port, 14: Heat generating element.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 槽内に雰囲気ガスと反応ガスを所定の流量比と
ガス圧に調節して導入するガス導入系とその排気
系を配管してなる真空槽と、該槽内に設けられた
被処理物を支持する負の電位に保たれた支持台と
、支持台ほ載置される被処理物を加熱するために
被処理物を囲繞するように支持台近傍に配置した
発熱体と、前記ガス導入系に近接し、かつ、真空
槽内に露出して配置された高周波放電により励起
するコイル状の電極とから構成したことを特徴と
する化学蒸着装置。 A vacuum chamber consisting of a gas introduction system and an exhaust system for introducing atmospheric gas and reaction gas into the chamber by adjusting the flow rate ratio and gas pressure to a predetermined flow rate ratio and gas pressure, and supporting the workpiece installed in the chamber. a support stand maintained at a negative potential, a heating element disposed near the support stand to surround the workpiece to heat the workpiece placed on the support stand; A chemical vapor deposition apparatus comprising a coil-shaped electrode excited by high-frequency discharge, which is placed adjacent to the electrode and exposed in a vacuum chamber.
JP1986169439U 1986-11-04 1986-11-04 Expired JPH0111721Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986169439U JPH0111721Y2 (en) 1986-11-04 1986-11-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986169439U JPH0111721Y2 (en) 1986-11-04 1986-11-04

Publications (2)

Publication Number Publication Date
JPS62126362U true JPS62126362U (en) 1987-08-11
JPH0111721Y2 JPH0111721Y2 (en) 1989-04-06

Family

ID=31103250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986169439U Expired JPH0111721Y2 (en) 1986-11-04 1986-11-04

Country Status (1)

Country Link
JP (1) JPH0111721Y2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006274390A (en) * 2005-03-30 2006-10-12 Yamaguchi Prefecture SiNxOyCz FILM, AND THIN FILM DEPOSITION METHOD
JP2012152732A (en) * 2011-01-26 2012-08-16 秉豊 ▲頼▼ Plasma reaction method and plasma reaction device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144891A (en) * 1977-05-25 1978-12-16 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for production of inorganic compound
JPS5488016U (en) * 1977-11-30 1979-06-21

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53144891A (en) * 1977-05-25 1978-12-16 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for production of inorganic compound
JPS5488016U (en) * 1977-11-30 1979-06-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006274390A (en) * 2005-03-30 2006-10-12 Yamaguchi Prefecture SiNxOyCz FILM, AND THIN FILM DEPOSITION METHOD
JP2012152732A (en) * 2011-01-26 2012-08-16 秉豊 ▲頼▼ Plasma reaction method and plasma reaction device

Also Published As

Publication number Publication date
JPH0111721Y2 (en) 1989-04-06

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