JPH0341848U - - Google Patents
Info
- Publication number
- JPH0341848U JPH0341848U JP10209889U JP10209889U JPH0341848U JP H0341848 U JPH0341848 U JP H0341848U JP 10209889 U JP10209889 U JP 10209889U JP 10209889 U JP10209889 U JP 10209889U JP H0341848 U JPH0341848 U JP H0341848U
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- electrode
- heater
- plasma cvd
- reaction gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図と第２図は、本考案の各実施例によるプ
ラズマＣＶＤ装置の概略を示す説明図、第３図は
、従来例によるプラズマＣＶＤ装置の概略を示す
説明図である。
１……ヒータ、２……基板、３……電極、４…
…排気ダクト、５……電極部ヒータ、６……反応
ガス導入路、７……高周波電流発生器、１０……
反応室。
1 and 2 are explanatory diagrams schematically showing plasma CVD apparatuses according to embodiments of the present invention, and FIG. 3 is an explanatory diagram schematically showing a plasma CVD apparatus according to a conventional example. 1... Heater, 2... Substrate, 3... Electrode, 4...
... Exhaust duct, 5 ... Electrode heater, 6 ... Reactant gas introduction path, 7 ... High frequency current generator, 10 ...
reaction chamber.
Claims (1)
ヒータ１と、上記反応室１０の中に反応ガスを導
入する反応ガス導入路６と、上記反応室１０の中
の反応ガスを排気する排気ダクト４と、上記反応
室１０の中に配置された電極３と、同電極３に高
周波電流を流す高周波電流発生器７とを備えるプ
ラズマＣＶＤ装置において、上記電極３の部分を
加熱するヒータ５を備えることを特徴とするプラ
ズマＣＶＤ装置。 A heater 1 that heats the substrate 2 housed in the reaction chamber 10, a reaction gas introduction path 6 that introduces a reaction gas into the reaction chamber 10, and an exhaust that exhausts the reaction gas inside the reaction chamber 10. In a plasma CVD apparatus comprising a duct 4, an electrode 3 disposed in the reaction chamber 10, and a high frequency current generator 7 for passing a high frequency current through the electrode 3, a heater 5 for heating a portion of the electrode 3 is provided. A plasma CVD apparatus comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10209889U JPH0341848U (en) | 1989-08-31 | 1989-08-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10209889U JPH0341848U (en) | 1989-08-31 | 1989-08-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0341848U true JPH0341848U (en) | 1991-04-22 |
Family
ID=31651017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10209889U Pending JPH0341848U (en) | 1989-08-31 | 1989-08-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0341848U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119520A (en) * | 1986-11-07 | 1988-05-24 | Agency Of Ind Science & Technol | Method and apparatus for depositing amorphous silicon alloy |
| JPH0217555B2 (en) * | 1979-08-23 | 1990-04-20 | Sankyo Co | |
| JPH02236279A (en) * | 1989-03-08 | 1990-09-19 | Fujitsu Ltd | Device for forming thin amorphous silicon film |
-
1989
- 1989-08-31 JP JP10209889U patent/JPH0341848U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0217555B2 (en) * | 1979-08-23 | 1990-04-20 | Sankyo Co | |
| JPS63119520A (en) * | 1986-11-07 | 1988-05-24 | Agency Of Ind Science & Technol | Method and apparatus for depositing amorphous silicon alloy |
| JPH02236279A (en) * | 1989-03-08 | 1990-09-19 | Fujitsu Ltd | Device for forming thin amorphous silicon film |
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