JPH01100432U - - Google Patents
Info
- Publication number
- JPH01100432U JPH01100432U JP19561787U JP19561787U JPH01100432U JP H01100432 U JPH01100432 U JP H01100432U JP 19561787 U JP19561787 U JP 19561787U JP 19561787 U JP19561787 U JP 19561787U JP H01100432 U JPH01100432 U JP H01100432U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- heating heater
- plasma
- utility
- scope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
Description
第1図は従来の一般的なプラズマCVD装置の
説明図であり、第2図は本考案のプラズマCVD
装置の説明図である。
1……RF電極、2,2′……基板電極、3…
…基板加熱ヒーター、4″……排気孔、4,4′
……排気系、5……ガス導入口、6……基板、7
……基板ホルダー、8……アースシールド、9…
…反応室。
FIG. 1 is an explanatory diagram of a conventional general plasma CVD apparatus, and FIG. 2 is an explanatory diagram of a plasma CVD apparatus of the present invention.
FIG. 2 is an explanatory diagram of the device. 1...RF electrode, 2,2'...substrate electrode, 3...
...Substrate heating heater, 4''...Exhaust hole, 4,4'
... Exhaust system, 5 ... Gas inlet, 6 ... Board, 7
...Board holder, 8...Earth shield, 9...
...Reaction chamber.
Claims (1)
に排気系を設けたことを特徴とするプラズマCV
D装置。 A plasma CV characterized in that an exhaust hole is provided in the substrate electrode and an exhaust system is provided in the substrate heating heater section.
D device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19561787U JPH01100432U (en) | 1987-12-23 | 1987-12-23 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19561787U JPH01100432U (en) | 1987-12-23 | 1987-12-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01100432U true JPH01100432U (en) | 1989-07-05 |
Family
ID=31486288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19561787U Pending JPH01100432U (en) | 1987-12-23 | 1987-12-23 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01100432U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013503464A (en) * | 2009-08-25 | 2013-01-31 | アイクストロン、エスイー | CVD method and CVD reactor |
-
1987
- 1987-12-23 JP JP19561787U patent/JPH01100432U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013503464A (en) * | 2009-08-25 | 2013-01-31 | アイクストロン、エスイー | CVD method and CVD reactor |