JPS61187375U - - Google Patents
Info
- Publication number
- JPS61187375U JPS61187375U JP7062585U JP7062585U JPS61187375U JP S61187375 U JPS61187375 U JP S61187375U JP 7062585 U JP7062585 U JP 7062585U JP 7062585 U JP7062585 U JP 7062585U JP S61187375 U JPS61187375 U JP S61187375U
- Authority
- JP
- Japan
- Prior art keywords
- heating mechanism
- substrate heating
- plasma cvd
- utility
- registration request
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 230000002265 prevention Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
第１図は、本考案の一実施例であるプラズマＣ
ＶＤ装置の構成の概略図、第２図は従来のプラズ
マＣＶＤ装置の構成の概略図である。
１……ヒータ、２……下部電極、３……基板、
４……チヤンバ内壁、５……チヤンバ、６……ガ
ス導入管、７……アース、８……上部電極、９…
…ＲＦ電源、１０……ヒータ電源、１１……排気
口、１２……防着板、１３……防着板。
FIG. 1 shows a plasma C which is an embodiment of the present invention.
Schematic diagram of the configuration of a VD apparatus. FIG. 2 is a schematic diagram of the configuration of a conventional plasma CVD apparatus. 1... Heater, 2... Lower electrode, 3... Substrate,
4... Chamber inner wall, 5... Chamber, 6... Gas introduction pipe, 7... Earth, 8... Upper electrode, 9...
...RF power source, 10... Heater power source, 11... Exhaust port, 12... Anti-adhesion plate, 13... Anti-adhesion plate.
Claims (1)
いて、基板加熱機構部及び温度上昇のある装置内
各部に防着板を設けたことを特徴とするプラズマ
ＣＶＤ装置。 A plasma CVD apparatus having a substrate heating mechanism, characterized in that an adhesion prevention plate is provided in the substrate heating mechanism part and in each part of the apparatus where the temperature rises.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7062585U JPS61187375U (en) | 1985-05-15 | 1985-05-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7062585U JPS61187375U (en) | 1985-05-15 | 1985-05-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61187375U true JPS61187375U (en) | 1986-11-21 |
Family
ID=30607376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7062585U Pending JPS61187375U (en) | 1985-05-15 | 1985-05-15 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61187375U (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5372460A (en) * | 1976-12-10 | 1978-06-27 | Hitachi Ltd | Plasma cvd unit |
| JPS58117868A (en) * | 1981-12-28 | 1983-07-13 | Toshiba Corp | Film forming device |
| JPS58164776A (en) * | 1982-03-24 | 1983-09-29 | Toshiba Corp | Chemical treatment device by glow discharge |
| JPS59197561A (en) * | 1983-04-25 | 1984-11-09 | Toshiba Corp | Membrane forming apparatus |
-
1985
- 1985-05-15 JP JP7062585U patent/JPS61187375U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5372460A (en) * | 1976-12-10 | 1978-06-27 | Hitachi Ltd | Plasma cvd unit |
| JPS58117868A (en) * | 1981-12-28 | 1983-07-13 | Toshiba Corp | Film forming device |
| JPS58164776A (en) * | 1982-03-24 | 1983-09-29 | Toshiba Corp | Chemical treatment device by glow discharge |
| JPS59197561A (en) * | 1983-04-25 | 1984-11-09 | Toshiba Corp | Membrane forming apparatus |