JPS5372460A - Plasma cvd unit - Google Patents

Plasma cvd unit

Info

Publication number
JPS5372460A
JPS5372460A JP14777176A JP14777176A JPS5372460A JP S5372460 A JPS5372460 A JP S5372460A JP 14777176 A JP14777176 A JP 14777176A JP 14777176 A JP14777176 A JP 14777176A JP S5372460 A JPS5372460 A JP S5372460A
Authority
JP
Japan
Prior art keywords
plasma cvd
cvd unit
electrode
unit
enlarge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14777176A
Other languages
Japanese (ja)
Other versions
JPS6132811B2 (en
Inventor
Hideo Sakai
Takeo Yoshimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14777176A priority Critical patent/JPS5372460A/en
Publication of JPS5372460A publication Critical patent/JPS5372460A/en
Publication of JPS6132811B2 publication Critical patent/JPS6132811B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the other electrode from being contaminated and to enlarge the life of electrode, by providing the quartz cover to one electrode holding the treated body and by limiting the place of reaction in the vicinity of the electrodes.
JP14777176A 1976-12-10 1976-12-10 Plasma cvd unit Granted JPS5372460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14777176A JPS5372460A (en) 1976-12-10 1976-12-10 Plasma cvd unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14777176A JPS5372460A (en) 1976-12-10 1976-12-10 Plasma cvd unit

Publications (2)

Publication Number Publication Date
JPS5372460A true JPS5372460A (en) 1978-06-27
JPS6132811B2 JPS6132811B2 (en) 1986-07-29

Family

ID=15437800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14777176A Granted JPS5372460A (en) 1976-12-10 1976-12-10 Plasma cvd unit

Country Status (1)

Country Link
JP (1) JPS5372460A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5562160A (en) * 1978-11-01 1980-05-10 Canon Inc Forming method for film by glow discharge
JPS5675565A (en) * 1979-11-20 1981-06-22 Sumitomo Electric Ind Ltd Manufacturing method of thin film
JPS58104015A (en) * 1981-12-11 1983-06-21 Canon Inc Apparatus for preparation of deposited film
JPS5950166A (en) * 1982-09-13 1984-03-23 Toshiba Corp Thin film forming device by glow discharge
JPS61187375U (en) * 1985-05-15 1986-11-21
JPH01115235U (en) * 1988-01-29 1989-08-03
JPH0525647A (en) * 1991-02-12 1993-02-02 Fujitsu Ltd Plasma vapor growth method
JP2009062579A (en) * 2007-09-06 2009-03-26 Fuji Electric Systems Co Ltd Film deposition system

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5562160A (en) * 1978-11-01 1980-05-10 Canon Inc Forming method for film by glow discharge
JPS5675565A (en) * 1979-11-20 1981-06-22 Sumitomo Electric Ind Ltd Manufacturing method of thin film
JPS58104015A (en) * 1981-12-11 1983-06-21 Canon Inc Apparatus for preparation of deposited film
JPS5950166A (en) * 1982-09-13 1984-03-23 Toshiba Corp Thin film forming device by glow discharge
JPH0569913B2 (en) * 1982-09-13 1993-10-04 Tokyo Shibaura Electric Co
JPS61187375U (en) * 1985-05-15 1986-11-21
JPH01115235U (en) * 1988-01-29 1989-08-03
JPH0525647A (en) * 1991-02-12 1993-02-02 Fujitsu Ltd Plasma vapor growth method
JP2009062579A (en) * 2007-09-06 2009-03-26 Fuji Electric Systems Co Ltd Film deposition system

Also Published As

Publication number Publication date
JPS6132811B2 (en) 1986-07-29

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