JPS5950166A - Thin film forming device by glow discharge - Google Patents

Thin film forming device by glow discharge

Info

Publication number
JPS5950166A
JPS5950166A JP15930382A JP15930382A JPS5950166A JP S5950166 A JPS5950166 A JP S5950166A JP 15930382 A JP15930382 A JP 15930382A JP 15930382 A JP15930382 A JP 15930382A JP S5950166 A JPS5950166 A JP S5950166A
Authority
JP
Japan
Prior art keywords
valve
glow discharge
thin film
vessel
reaction vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15930382A
Other languages
Japanese (ja)
Other versions
JPH0569913B2 (en
Inventor
Genichi Adachi
元一 安達
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15930382A priority Critical patent/JPS5950166A/en
Publication of JPS5950166A publication Critical patent/JPS5950166A/en
Publication of JPH0569913B2 publication Critical patent/JPH0569913B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To enable the suppression of the formation of powder that influences adversely the characteristics of the thin film to be formed, by providing an openable and closable shielding plate in the recessed part of the inside wall surface in the region of a reaction vessel where glow discharge is induced. CONSTITUTION:A prescribed substrate 3 is installed on a sample support base 2 in a reaction vessel 1. A valve 4 is first opened to evacuate the inside of the vessel 1 to a high degree of vacuum through a high vacuum evacuation system A. The valve 4 is then closed and a valve 6 is opened to introduce gaseous SiH4 through a gas introducing pipe 7 into the vessel 1. After the inside of the vessel 1 attains a prescribed reduced pressure, a valve 5 is opened to maintain the inside of the pressure under a prescribed pressure by the evacuation system B using a mechanical booster pump. High frequency electric power is applied to induce glow discharge, thereby forming an amorphous Si film on the substrate 3. Since the part up to the valve 4 is recessed part 8 and causes the intrusion of plasma or abnormal discharge, the part 8 is covered with a shielding plate 9.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は、グロー放電によって薄膜形成を行なう装置
の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in an apparatus for forming a thin film by glow discharge.

〔発明の技νFJ的背景とその問題点〕通常α)グロー
放電成膜装置にオ・5いて、グロー放電を生起する領域
すなわち反尾、谷漸の内壁面fKは、例えはt(b真壁
ゎ1気糸に接続す−るための開口部や、真壁ゲージを挿
入づ−るだめのゲージボートに均応する開口部、放電状
態を監視するための窓部等が凹部として形成されている
[Technique of the invention νFJ background and its problems] Normally α) In a glow discharge film forming apparatus, the inner wall surface fK of the area where glow discharge occurs, that is, the inner wall surface fK of the tail and the valley, is, for example, t(b Makabeゎ1 The opening for connecting to the air thread, the opening to accommodate the gauge boat into which the Makabe gauge is inserted, and the window for monitoring the discharge condition are formed as recesses. .

ところがこの状態でグロー放電を行なうと、これらの凹
部にもプラズマが侵入するため例えばモノンランを用い
たクロー族%Lの場合などでは褐色粉末が形成されて内
壁に角治したりポローカンード放電を発生して放電が不
安定になったりすることが往々にしてあった。この粉末
は次ノグロー放電成膜に灼し膜負劣化やヒンホール発生
等の悪影響を与えろため、1つの成膜工程終了後直もに
除去しなけれはならないが、hIJ記凹部内に飼鳥−シ
たものは、オペレーターの手がそこまで入り込まない等
の制約により完全に除去することは雛がしい。又、ホロ
ーカンート放電や異常放電を発生した場合には)比成す
る薄膜そのものの特性が不良となってしまうという欠点
があった。
However, when glow discharge is performed in this state, plasma also invades these recesses, so for example, in the case of cloro group%L using monolan, brown powder is formed and the inner wall is cornered, or a pollo cand discharge is generated. The discharge often became unstable. This powder must be removed immediately after the completion of one film forming process to avoid negative effects such as negative deterioration of the burnt film and generation of hinholes on the subsequent no-glow discharge film formation. It is difficult to completely remove objects due to restrictions such as the operator's hands not being able to penetrate that far. Furthermore, when hollow cant discharge or abnormal discharge occurs, there is a drawback that the properties of the thin film itself become poor.

〔発明の目的〕[Purpose of the invention]

本発明は上述した欠点を改良したものでグロー放電を生
起する反応容器内で異常放電を生セす、又、形成する膜
の特性に悪影響を及はす粉末の発生を抑制する幼果を持
つグロー放電による薄膜形成装置を提供することを目的
とする。
The present invention improves the above-mentioned drawbacks, and has a young fruit that suppresses the generation of powder that causes abnormal discharge in the reaction vessel that generates glow discharge, and that adversely affects the properties of the formed film. An object of the present invention is to provide a thin film forming apparatus using glow discharge.

〔発明の組侠〕[Invention team]

本発明は上記の目的を達成するため、反応容器の内壁面
上に形成される凹部を心安に応じて開閉oJ’化な遮蔽
板によって憶ったことを特徴とするものである。
In order to achieve the above object, the present invention is characterized in that the recess formed on the inner wall surface of the reaction vessel is provided with a shielding plate that can be opened and closed as required.

この遮蔽板は前屈凹部へのプラズマの侵入を防ぐと同時
に反応容器内壁而の幾何学的な不均一性(凹凸なと)に
起因する異常放′亀を抑制する働きを1−るものである
This shielding plate serves to prevent plasma from entering the forward bending recess, and at the same time to suppress abnormal radiation caused by the geometrical non-uniformity (unevenness) of the inner wall of the reaction vessel. be.

〔発明の効・呆〕 木兄IJJにより反応、容器内において安建したグロー
放tWをq−=起上しめることが可能となり、膜質劣化
を招く気相反応による倣粉末の四部における発生を抑制
することがi5J能となった。
[Effects and Disappointments of the Invention] Kinoi IJJ makes it possible to raise q-= the glow release tW that has reacted and remained stable in the container, and suppresses the generation of imitation powder in the four parts due to gas phase reactions that cause film quality deterioration. This became i5J Noh.

更に具体的には、本発明によれは例えはアモルファスシ
リコン膜形成においては通常のモノシランガス(Sin
、)のグロー放電分解の腺発生する茶褐色粉末が反応容
器において4≧く発生ぜす、又極めて安定した放電が得
られることから同時に形成された複数個の基板上り)ア
モルファスiy IJコン膜の膜厚や暗導電率、明導7
L率等の特性にもパランキはほとんどないことが俸認さ
れている。
More specifically, according to the present invention, for example, when forming an amorphous silicon film, ordinary monosilane gas (Sin
,) The glow discharge decomposition of 4 ≧ brown powder is generated in the reaction vessel, and extremely stable discharge can be obtained. Thickness, dark conductivity, light conductivity 7
It is recognized that there is almost no paranki in characteristics such as the L rate.

又、前記凹部内での茶褐色粉末の例鳥が熱いことから、
膜形成後の反応容器内のクリーニング工程も大幅に短縮
されるという生芹上不益な効果も現れた。
Also, since the brown powder in the recess is hot,
The cleaning process inside the reaction vessel after film formation was also significantly shortened, which was an undesirable effect in terms of productivity.

〔発明の実施例〕[Embodiments of the invention]

図は、本発明の一実施物」σ〕クロー放電装も・毛を模
式的に示す平面図である。反応容b1の内部には、試料
支持台2があり、l’)Iンεの暴政3がこの試料支持
台2上に設置されている。又、この反応容器Iは真空バ
ルブ4を介して篩真壁排気糸Aに、同じく真壁バルブ5
を弁し℃メカニカルブースターボングによる排気、ML
IK接続されている。
The figure is a plan view schematically showing a claw discharge device according to the present invention. Inside the reaction chamber b1, there is a sample support stand 2, and the tyranny 3 of l')Iinε is installed on this sample support stand 2. Further, this reaction vessel I is connected to the sieve Makabe evacuation thread A via the vacuum valve 4, and is also connected to the Makabe valve 5.
Exhaust by mechanical booster bong, ML
IK connected.

Jlu ’iF+の操作子+11LLにおいてはまずバ
ルブ4を開けて高真空排気糸Aにより反応容器Iを5×
ブ4を閉じてからストップバルブ6を開け、ガス導入層
7を通して反応容器I内へモノシランガスを39 SC
CMの流部で導入する。反応容器I内のロニカがl ’
YorrllCなってからバルブ5を開け”U/カニカ
ルブ−スターポンプによる排気糸BKより0.5 To
rr VC保って排気を続けなから几lit電力(13
,56MJ−1z )を印加してグロー放電を生起−J
ることにより基&3上にアモルファスシリコ/膜を形成
することになる。
In the Jlu 'iF+ operator +11LL, first open the valve 4 and use the high vacuum evacuation line A to vacuum the reaction vessel I by 5x.
After closing valve 4, open stop valve 6, and introduce monosilane gas into reaction vessel I through gas introduction layer 7 at 39 SC.
Introduced at the end of the commercial. Ronica in reaction vessel I is l'
After YorrllC, open valve 5 and 0.5 To
rr Do not keep the VC and continue exhausting the lit power (13
, 56MJ-1z) to generate a glow discharge.
This results in the formation of an amorphous silico/film on the group &3.

とこ7)で、市真空排気側に接続するための真空バルブ
までの1部分が凹部8となつ℃おり、このままで目、こ
こにプラズマが侵入したり、異常放%を起こしたりする
ことになる。そこで本実施例では遮蔽板9によりこの凹
gp Bを覆った。
At point 7), the part up to the vacuum valve for connecting to the city vacuum exhaust side is in the recess 8°C, and if this continues, plasma will enter the eye and cause abnormal discharge. . Therefore, in this embodiment, this concave gp B is covered with a shielding plate 9.

この遮蔽板9は反応容器1と同じくステンレスから成り
、矢印で示すように横方向へスライドさせることにより
開閉可能な構造とした。
This shielding plate 9 is made of stainless steel like the reaction vessel 1, and has a structure that can be opened and closed by sliding it laterally as shown by the arrow.

この遮蔽板9によって凹部8を俊うことによりグロー放
電中に異常放電を生ずることはなくなり、又プラズマの
凹部8への侵入が無いことから、この部分での茶褐色粉
の発生も皆無となった。このため、ピノホール等のj挨
貿劣化は無くなり内税性の良い膜が得られるようになっ
た。
By shielding the concave portion 8 with the shielding plate 9, no abnormal discharge occurs during glow discharge, and since no plasma enters the concave portion 8, no brown powder is generated in this area. . For this reason, the deterioration caused by foreign trade of Pinohole etc. is eliminated, and a film with good tax-inclusive properties can now be obtained.

又置真空仙1σ)バルブ4までの凹部8に茶褐色粉が+
j着しないことから装置としての保守か容易となった。
Also, there is a brown powder in the recess 8 up to the valve 4.
Maintenance of the device is easier because it does not cause damage.

尚、本実施例においては遮蔽板9はステ/レス叛とした
が、これに限定することなく、形成づる薄膜の特性に彩
響を及はさない材料であれは例えはアルミニウム、鉄、
ニッケル、銅、テフロン、ポリイミド、ツjラス、石英
等であっても良い。
In this embodiment, the shielding plate 9 is made of steel/resistance material, but it is not limited to this, and any material that does not affect the characteristics of the thin film to be formed may be used, such as aluminum, iron, etc.
Nickel, copper, Teflon, polyimide, glass, quartz, etc. may be used.

又、開閉の方法は手動であっても、自動であつても良い
し開閉の方式もスライド式以外の例えは一点を軸にした
回転ツヤツタ一方式でも良い孕を」、勿論であZ)。
Also, the opening/closing method may be manual or automatic, and the opening/closing method may also be a one-way type other than a sliding type, such as a one-way type that rotates around a single point.'' (Of course).

4、開山]のf7月月コな説明 図は′A−発明の一実施例をb兄明するための装置平面
しjである。
4, Opening of a Mountain] is a plan view of an apparatus for explaining an embodiment of the invention.

I・・反圧、容器、2・・・試料支持台、3・・・試料
湛板)、4.5・・真をバルブ、6・・ストップバルブ
、7 ガス等大ゞ白′、8・・・凹部、9・・・遮蔽板
I...Counter pressure, container, 2...Sample support stand, 3...Sample storage plate), 4.5...True valve, 6...Stop valve, 7. Gas, etc. large white', 8. ... recess, 9... shielding plate.

出願人代理人弁理士 鈴江武彦Patent attorney representing applicant: Takehiko Suzue

Claims (1)

【特許請求の範囲】 (IJ  反応容器内でグロー放電を生起することによ
り原料ガスを分解して所定基板上に薄膜を形成する装置
において、反応容器のグロー放電を生起する領域の内壁
面に形成される四部に、開閉可能な遮蔽板を設けたこと
を特徴とするクロー族′N□、による#&!形成装置。 (2)@記凹Mlは排気系に接続される一口部である特
許請求の範囲第1項記載のグロー放電による薄膜形成装
置。 (3)前記薄膜はアモルファスンリフ/膜である特許請
求の範囲第1項記載のグロー放電による薄膜形成装置。
[Claims] (IJ) In an apparatus that decomposes a source gas to form a thin film on a predetermined substrate by generating glow discharge in a reaction vessel, IJ is formed on the inner wall surface of the area where glow discharge occurs in the reaction vessel. A #&! forming device by Crow group 'N□, which is characterized by having shielding plates that can be opened and closed provided on the four parts that are exposed to the air. A thin film forming apparatus using glow discharge according to claim 1. (3) A thin film forming apparatus using glow discharge according to claim 1, wherein the thin film is an amorphous thin film.
JP15930382A 1982-09-13 1982-09-13 Thin film forming device by glow discharge Granted JPS5950166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15930382A JPS5950166A (en) 1982-09-13 1982-09-13 Thin film forming device by glow discharge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15930382A JPS5950166A (en) 1982-09-13 1982-09-13 Thin film forming device by glow discharge

Publications (2)

Publication Number Publication Date
JPS5950166A true JPS5950166A (en) 1984-03-23
JPH0569913B2 JPH0569913B2 (en) 1993-10-04

Family

ID=15690849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15930382A Granted JPS5950166A (en) 1982-09-13 1982-09-13 Thin film forming device by glow discharge

Country Status (1)

Country Link
JP (1) JPS5950166A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01178566A (en) * 1987-12-29 1989-07-14 Nippon Synthetic Chem Ind Co Ltd:The Pressure-sensitive adhesive composition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372460A (en) * 1976-12-10 1978-06-27 Hitachi Ltd Plasma cvd unit
JPS556409A (en) * 1978-06-26 1980-01-17 Hitachi Ltd Plasma gas phase reactor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5372460A (en) * 1976-12-10 1978-06-27 Hitachi Ltd Plasma cvd unit
JPS556409A (en) * 1978-06-26 1980-01-17 Hitachi Ltd Plasma gas phase reactor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01178566A (en) * 1987-12-29 1989-07-14 Nippon Synthetic Chem Ind Co Ltd:The Pressure-sensitive adhesive composition
US4987186A (en) * 1987-12-29 1991-01-22 Nippon Gohsei Kagaku Kogyo Kabushiki Kaisha Pressure sensitive adhesive composition

Also Published As

Publication number Publication date
JPH0569913B2 (en) 1993-10-04

Similar Documents

Publication Publication Date Title
JP2674488B2 (en) Dry etching chamber cleaning method
JPH02240267A (en) Method for removing gas remaining in cvd device
JPS61127121A (en) Formation of thin film
JPS5950166A (en) Thin film forming device by glow discharge
US4508590A (en) Method for the deposition of high-quality crystal epitaxial films of iron
Hong et al. Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching
JPS6037733A (en) Dry etching apparatus
JP3395180B2 (en) Substrate processing equipment
JPH03191063A (en) Continuous type sputtering device
JPS6034012A (en) Manufacture of solid thin film
JPS593929A (en) Etching of thin-film
JPS5645759A (en) Preparation of vapor growth film
JPS5970763A (en) Thin film forming device
JPS5615031A (en) Molecular beam epitaxial growing apparatus
JPH0487329A (en) Dry etching method
JPS6054443A (en) Plasma vapor phase growth device
JPS6147628A (en) Formation of semiconductor thin film and apparatus therefor
JPS5840841A (en) Treatment of semiconductor substrate
JPS61143585A (en) Thin film forming method
JPS6128371B2 (en)
JPH07142404A (en) Method for forming and removing selective growth mask
US6758222B2 (en) Processing method for substrate
JPS63115340A (en) Plasma processor
JPH05139881A (en) Molecular beam epitaxial growing method and unit therefor
JPH0645255A (en) Method for forming thin film