JPS59119840A - Microwave plasma processing device - Google Patents
Microwave plasma processing deviceInfo
- Publication number
- JPS59119840A JPS59119840A JP22843482A JP22843482A JPS59119840A JP S59119840 A JPS59119840 A JP S59119840A JP 22843482 A JP22843482 A JP 22843482A JP 22843482 A JP22843482 A JP 22843482A JP S59119840 A JPS59119840 A JP S59119840A
- Authority
- JP
- Japan
- Prior art keywords
- reaction gas
- microwaves
- gas
- corroded
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012495 reaction gas Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000002699 waste material Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000919 ceramic Substances 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 238000005530 etching Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000208822 Lactuca Species 0.000 description 1
- 235000003228 Lactuca sativa Nutrition 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（１）発明の技術分野
本０発明はマイクロ波プラズマ処理装置、詳しくは同装
置の反応ガスの導入管の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a microwave plasma processing apparatus, and more particularly to an improvement of a reaction gas introduction pipe of the apparatus.
（２）技術の背景
マイクロ波によってプラズマを発生させ、このプラズマ
を利用して直接的にまたは間接的に被加工物を処理する
工程が半導体装置の製造において利用され−ζいる。(2) Background of the Technology A process of generating plasma using microwaves and using this plasma to directly or indirectly process a workpiece is used in the manufacture of semiconductor devices.
第１図にはマイクロ波プラズマ処理装置（例えばマイク
ロ波プラズマエツチング装置）が断面図で示され、同図
においζ、■はマイクロ波発生源（アンテナ）、２はア
イソレーター、３ばスタブチューナー、４はダミーロー
ド（例えば空冷または水冷負荷）、５ば導波管、６は窓
、７はチェンバ、８はカス導入管（ガスば矢印Ｇで示ず
方向に導入される）、９ば被加工物（例えばレタス１−
膜が塗布されたウェハ）、１０はその上にウェハが載置
されるステージ、１１は排気口（排気は矢印Ｅの示す方
向になされる）をそれぞれ示す。FIG. 1 shows a cross-sectional view of a microwave plasma processing apparatus (for example, a microwave plasma etching apparatus), in which ζ and ■ are microwave generation sources (antennas), 2 is an isolator, 3 is a stub tuner, is a dummy load (for example, an air-cooled or water-cooled load), 5 is a waveguide, 6 is a window, 7 is a chamber, 8 is a waste introduction pipe (gas is introduced in the direction not shown by arrow G), and 9 is a workpiece (For example, lettuce 1-
10 is a stage on which the wafer is placed, and 11 is an exhaust port (exhaust is performed in the direction indicated by arrow E).
アイソレーター２は、マイクロ波を矢印１の方向には通
ずが反射波は矢印Ｈの方向に曲げて、マイクロ波がその
発生源のマグネト１コンに工１ノ達しマグネトロンを損
傷することを防止するために設けられる。導波管５およ
びチェンバ７はアルミニウム製、また窓６はマイクロ波
を通しうるよう石英製である。チェンバ７はその形状に
よるマイクロ波の反射が大きくならないように、導波管
５内のマイクロ波のモード例えばＲｏ＋が得られるよう
設計されている。かかる装置を用いて例えばウェハ上の
レジスト剥離（アッシング）を行うのである。Isolator 2 allows the microwave to pass in the direction of arrow 1, but bends the reflected wave in the direction of arrow H, preventing the microwave from reaching the source magnetron 1 and damaging the magnetron. established for the purpose of The waveguide 5 and chamber 7 are made of aluminum, and the window 6 is made of quartz to allow microwaves to pass through. The chamber 7 is designed so that a microwave mode such as Ro+ can be obtained in the waveguide 5 so that the microwave reflection due to its shape is not large. For example, resist stripping (ashing) on a wafer is performed using such an apparatus.
（３）従来技術と問題点
上記した装置において、ガス導入管８は、それがプラズ
マにより汚染されることのないよう純アルミニウムで作
成した。例えばステンレスを用いると、その中のクロム
がプラスマによって飛はされて被加工物の上に落下する
ことが判明したから、それを避けるためである。(3) Prior Art and Problems In the above-described apparatus, the gas introduction tube 8 was made of pure aluminum to prevent it from being contaminated by plasma. For example, it has been found that when stainless steel is used, the chromium in it is blown away by the plasma and falls onto the workpiece, so this is to avoid this.
とごろか、アルミニウム導波管はチェンバ７内の電界を
乱し、反射波が発生される。反則波が発生ずることは、
その分たけマイクロ波のパワーか減少する結果となるだ
りでなく、前記した如（、マイクロ波発生源１のマグネ
Ｉ・ロンを損傷するので、６：Ｉ記したアイソレーター
やチューナーが必要になるのである。In fact, the aluminum waveguide disturbs the electric field within the chamber 7 and a reflected wave is generated. The fact that a counter wave is generated is
Not only will the power of the microwave be reduced by that amount, but it will also damage the magnetron of the microwave source 1, so an isolator or tuner as described in 6:I will be required. be.
事実、純アルミニウムで上記の如くガス導入上・８を作
り、レジス！・剥離のために、反応カスとして（０２＋
ＣＩ・ｑ）ガスを用いてレジストのエツチングを行うに
つき、 ０２ガスＩ Ｔｏｒｒをチェンノ＼７内に満た
しマイクロ波を導入したとごろ、約３５％の反射波があ
り、レジストを１μｍの厚さにエツチングするのに３０
秒を要した。そこで、マイクロ波を通し前記した反射波
を減少させ、反応ガスに腐食されないガス導入管が要望
され′ζいる。In fact, I made the gas introduction top 8 from pure aluminum as described above, and Regis!・For peeling, as reaction residue (02+
When etching the resist using CI・q) gas, when the chamber was filled with 02 gas I Torr and microwaves were introduced, there was a reflected wave of about 35%, and the resist was etched to a thickness of 1 μm. 30 for etching
It took seconds. Therefore, there is a need for a gas introduction tube that reduces the above-mentioned reflected waves through microwaves and is not corroded by the reaction gas.
（４）発明の目的
本発明は上記従来の問題点に鑑み、マイクロ波プラズマ
処理装置において、反応ガスの導入層を、マイクロ波を
十分に通して反射波の発生を減少し、かつ、反応ガスに
腐食されることのないものとして提供することを目的と
する。(4) Purpose of the Invention In view of the above-mentioned conventional problems, the present invention provides a microwave plasma processing apparatus in which microwaves are sufficiently passed through a reactant gas introduction layer to reduce the generation of reflected waves. The purpose is to provide products that will not be corroded.
（５）発明の構成
そしてこの目的は本発明によれは、マイクロ波プラズマ
処理装置のチェンバに反応ガスを導入するガス導入管を
、マイクロ波を通し、反応ガスにより腐食されない材料
で形成したことを特徴とするマイクロ波プラズマ処理装
置を提供するごとによって達成される。(5) Structure and object of the invention According to the present invention, a gas introduction pipe for introducing a reaction gas into a chamber of a microwave plasma processing apparatus is made of a material that is not corroded by the reaction gas through microwaves. This is achieved by providing a microwave plasma processing apparatus having the following characteristics.
（６）発明の実施例
以下本発明実施例を前記添イ″１図面を参照して説明す
る。(6) Embodiments of the Invention Embodiments of the present invention will now be described with reference to the attached drawings.
本願発明者は、マイクロ波を通ず材料とじて二酸化シリ
コン（５ｉ０２） 、セラミックその他を選んで実験し
たが、５ｉ０２は反応カスにより腐食されるので、セラ
ミックのみが残った。ところが、セラミックはガス導入
に適した管状に形成することが難しく、パイプ加］二に
なじむものとし−（はマコールとして知られるアルミブ
ー（八β２０３）が最適であることをつきとめた。The inventor of the present invention conducted experiments by selecting silicon dioxide (5i02), ceramic, and other materials as materials that were not exposed to microwaves, but since 5i02 was corroded by the reaction residue, only the ceramic remained. However, it is difficult to form ceramic into a tubular shape suitable for gas introduction, and in order to fit it into a pipe, we found that an aluminum tube (8β203) known as Macol was most suitable.
そしてアルミナ製のガス導入管を用いて１μｍの膜厚の
レジスト膜をエツチングしたところ、２０秒のエツチン
グでレジス日泉が完全に剥離されることを確認した。な
お、このとき反射波は５％であった。When a resist film with a thickness of 1 μm was etched using an alumina gas introduction tube, it was confirmed that the resist film was completely removed after 20 seconds of etching. Note that at this time, the amount of reflected waves was 5%.
第１図の装置において、上記のガス導入管を用い、スタ
ブチューナーとアイソレーターおよびダミーロートを除
去し、第２図に示す装置を用いてエツチングを行ったが
、マグネトロンの損傷は全く認められなかった。なお、
第２図において、第１図に示したものと同じ部分は同一
符号を付して表示した。In the apparatus shown in Fig. 1, the stub tuner, isolator, and dummy funnel were removed using the gas introduction pipe described above, and etching was performed using the apparatus shown in Fig. 2, but no damage to the magnetron was observed. . In addition,
In FIG. 2, the same parts as those shown in FIG. 1 are designated by the same reference numerals.
（７）発明の効果
以上詳細に説明した如く、本発明の装置においては、ガ
ス導入管をアルミナで作ることにより、装置のみでかな
りの金額を節約することができただけでなく、エツチン
グ速度が大幅に改善され、半導体装置の製造歩留りの向
上に効果大であることが判明した。なお、以上にはレジ
ストのエツチングを例に説明したが、本発明の適用範囲
はその場合に限定されるものではなく、その他の処理を
行う場合にも及ぶものである。(7) Effects of the Invention As explained in detail above, in the apparatus of the present invention, by making the gas introduction pipe from alumina, not only was it possible to save a considerable amount of money in the apparatus alone, but also the etching speed was increased. It has been found that this has been greatly improved and is highly effective in improving the manufacturing yield of semiconductor devices. Although resist etching has been explained above as an example, the scope of application of the present invention is not limited to that case, but also extends to cases where other processing is performed.
第１図は従来のマイクロ波プラズマ処理装置の断面図、
第２図は本発明にかかる前記装置の断面図である。
１−マイクロ波発生源、２・−アイソ
レーター、３−スタブチューナー、
４−ダミーロード、５−導波管、６−Figure 1 is a cross-sectional view of a conventional microwave plasma processing apparatus.
FIG. 2 is a sectional view of the device according to the invention. 1-Microwave source, 2-Isolator, 3-Stub tuner, 4-Dummy load, 5-Waveguide, 6-
Claims (1)
を４大するカス導入管を、マイクロ波を通し、反応ガス
によりｌｌｉ食されない材料で形成したことを特徴とす
るマイクロ波プラズマ処理装置。A microwave plasma processing apparatus characterized in that a waste introduction tube for introducing a reaction gas into a chamber of the microwave plasma processing apparatus is made of a material that is not eaten away by the reaction gas through microwaves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22843482A JPS59119840A (en) | 1982-12-27 | 1982-12-27 | Microwave plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22843482A JPS59119840A (en) | 1982-12-27 | 1982-12-27 | Microwave plasma processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59119840A true JPS59119840A (en) | 1984-07-11 |
Family
ID=16876422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22843482A Pending JPS59119840A (en) | 1982-12-27 | 1982-12-27 | Microwave plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59119840A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60169139A (en) * | 1984-02-13 | 1985-09-02 | Canon Inc | Vapor-phase treating apparatus |
-
1982
- 1982-12-27 JP JP22843482A patent/JPS59119840A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60169139A (en) * | 1984-02-13 | 1985-09-02 | Canon Inc | Vapor-phase treating apparatus |
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