JPS556409A - Plasma gas phase reactor - Google Patents

Plasma gas phase reactor

Info

Publication number
JPS556409A
JPS556409A JP7648978A JP7648978A JPS556409A JP S556409 A JPS556409 A JP S556409A JP 7648978 A JP7648978 A JP 7648978A JP 7648978 A JP7648978 A JP 7648978A JP S556409 A JPS556409 A JP S556409A
Authority
JP
Japan
Prior art keywords
bell jar
upper electrode
space
phase reactor
gas phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7648978A
Other languages
Japanese (ja)
Other versions
JPS6146551B2 (en
Inventor
Manabu Araoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7648978A priority Critical patent/JPS556409A/en
Publication of JPS556409A publication Critical patent/JPS556409A/en
Publication of JPS6146551B2 publication Critical patent/JPS6146551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Abstract

PURPOSE:To prevent the adhesion of nitride on the surface of the bell jar above the upper electrode, by packing the sealing material into the gap between the upper electrode and the inner space of the bell jar, at the plasma gas phase reactor. CONSTITUTION:At the gap between the upper space of the bell jar 1 and the upper electrode 2, the sealing material 3 consisting of the insulating material, asbestos, etc., for instance, is packed around the circumference of the upper electrode 2. Hereby, the reactant gas, being supplied from the reactant gas feed pipe 4 into the middle zone above the lower electrode 5, is restrained to enter into the space above the upper electrode 2; as a result, the wafer is permitted to be free from being stained by the dropping flake. Moreover, since the adhesion of the nitride on the upper inner surface of the bell jar is prevented, so much frequent cleaning of the inner surface of the bell jar becomes unnecessary, resulting in improvement of the working efficiency.
JP7648978A 1978-06-26 1978-06-26 Plasma gas phase reactor Granted JPS556409A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7648978A JPS556409A (en) 1978-06-26 1978-06-26 Plasma gas phase reactor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7648978A JPS556409A (en) 1978-06-26 1978-06-26 Plasma gas phase reactor

Publications (2)

Publication Number Publication Date
JPS556409A true JPS556409A (en) 1980-01-17
JPS6146551B2 JPS6146551B2 (en) 1986-10-15

Family

ID=13606622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7648978A Granted JPS556409A (en) 1978-06-26 1978-06-26 Plasma gas phase reactor

Country Status (1)

Country Link
JP (1) JPS556409A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950166A (en) * 1982-09-13 1984-03-23 Toshiba Corp Thin film forming device by glow discharge
US4607392A (en) * 1983-08-08 1986-08-19 U.S. Philips Corporation Circuit for improving the tuning behavior of a receiver frequency control loop
US20120111501A1 (en) * 2010-11-04 2012-05-10 Tokyo Electron Limited Plasma processing apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950166A (en) * 1982-09-13 1984-03-23 Toshiba Corp Thin film forming device by glow discharge
JPH0569913B2 (en) * 1982-09-13 1993-10-04 Tokyo Shibaura Electric Co
US4607392A (en) * 1983-08-08 1986-08-19 U.S. Philips Corporation Circuit for improving the tuning behavior of a receiver frequency control loop
US20120111501A1 (en) * 2010-11-04 2012-05-10 Tokyo Electron Limited Plasma processing apparatus
US9196461B2 (en) * 2010-11-04 2015-11-24 Tokyo Electron Limited Plasma processing apparatus

Also Published As

Publication number Publication date
JPS6146551B2 (en) 1986-10-15

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