JPS5420971A - Vapor phase growing device - Google Patents

Vapor phase growing device

Info

Publication number
JPS5420971A
JPS5420971A JP8651177A JP8651177A JPS5420971A JP S5420971 A JPS5420971 A JP S5420971A JP 8651177 A JP8651177 A JP 8651177A JP 8651177 A JP8651177 A JP 8651177A JP S5420971 A JPS5420971 A JP S5420971A
Authority
JP
Japan
Prior art keywords
jar
vapor phase
growing device
phase growing
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8651177A
Other languages
Japanese (ja)
Inventor
Osamu Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8651177A priority Critical patent/JPS5420971A/en
Publication of JPS5420971A publication Critical patent/JPS5420971A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains

Abstract

PURPOSE:To prevent a reactive gas from contacting with the inner wall of a bell jar by allowing the gas to blow off from a nozzle into the jar through the central part of a disc substrate susceptor and at the same time, letting a nonreactive gas flow along the inner wall of the jar from a blowhole provided at the upper central part of the jar.
JP8651177A 1977-07-18 1977-07-18 Vapor phase growing device Pending JPS5420971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8651177A JPS5420971A (en) 1977-07-18 1977-07-18 Vapor phase growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8651177A JPS5420971A (en) 1977-07-18 1977-07-18 Vapor phase growing device

Publications (1)

Publication Number Publication Date
JPS5420971A true JPS5420971A (en) 1979-02-16

Family

ID=13888996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8651177A Pending JPS5420971A (en) 1977-07-18 1977-07-18 Vapor phase growing device

Country Status (1)

Country Link
JP (1) JPS5420971A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4651673A (en) * 1982-09-02 1987-03-24 At&T Technologies, Inc. CVD apparatus
US4900525A (en) * 1986-08-25 1990-02-13 Gte Laboratories Incorporated Chemical vapor deposition reactor for producing metal carbide or nitride whiskers
US4987855A (en) * 1989-11-09 1991-01-29 Santa Barbara Research Center Reactor for laser-assisted chemical vapor deposition
US20120103260A1 (en) * 2009-07-16 2012-05-03 Wonik Ips Co., Ltd. Apparatus for manufacturing semiconductor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4651673A (en) * 1982-09-02 1987-03-24 At&T Technologies, Inc. CVD apparatus
US4900525A (en) * 1986-08-25 1990-02-13 Gte Laboratories Incorporated Chemical vapor deposition reactor for producing metal carbide or nitride whiskers
US4987855A (en) * 1989-11-09 1991-01-29 Santa Barbara Research Center Reactor for laser-assisted chemical vapor deposition
US20120103260A1 (en) * 2009-07-16 2012-05-03 Wonik Ips Co., Ltd. Apparatus for manufacturing semiconductor
US8246747B2 (en) * 2009-07-16 2012-08-21 Wonik Ips Co., Ltd. Apparatus for manufacturing semiconductor

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