JPS5380158A - Vapor phase growth for compound semiconductor - Google Patents

Vapor phase growth for compound semiconductor

Info

Publication number
JPS5380158A
JPS5380158A JP15676776A JP15676776A JPS5380158A JP S5380158 A JPS5380158 A JP S5380158A JP 15676776 A JP15676776 A JP 15676776A JP 15676776 A JP15676776 A JP 15676776A JP S5380158 A JPS5380158 A JP S5380158A
Authority
JP
Japan
Prior art keywords
compound semiconductor
vapor phase
phase growth
gas
substrate toward
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15676776A
Other languages
Japanese (ja)
Other versions
JPS5514529B2 (en
Inventor
Akira Miura
Masahiko Kawano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15676776A priority Critical patent/JPS5380158A/en
Publication of JPS5380158A publication Critical patent/JPS5380158A/en
Publication of JPS5514529B2 publication Critical patent/JPS5514529B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To uniform the depth of growth layer and the carrier density by slanting the upper sid of a substrate toward the gas upper stream side and the lower side of the substrate toward the gas lower stream side when the compound semiconductor substrate is inserted into a reaction room and a compound semiconductor crystal layer is epitaxial-grown.
JP15676776A 1976-12-25 1976-12-25 Vapor phase growth for compound semiconductor Granted JPS5380158A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15676776A JPS5380158A (en) 1976-12-25 1976-12-25 Vapor phase growth for compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15676776A JPS5380158A (en) 1976-12-25 1976-12-25 Vapor phase growth for compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5380158A true JPS5380158A (en) 1978-07-15
JPS5514529B2 JPS5514529B2 (en) 1980-04-17

Family

ID=15634856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15676776A Granted JPS5380158A (en) 1976-12-25 1976-12-25 Vapor phase growth for compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5380158A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037860U (en) * 1983-08-22 1985-03-15 松下電器産業株式会社 gas sensor
JPS61748A (en) * 1984-06-14 1986-01-06 Mitsubishi Electric Corp Malodor gas density measuring apparatus

Also Published As

Publication number Publication date
JPS5514529B2 (en) 1980-04-17

Similar Documents

Publication Publication Date Title
JPS5380158A (en) Vapor phase growth for compound semiconductor
JPS5423386A (en) Manufacture of semiconductor device
JPS542300A (en) Methdo and apparatus for vapor phase growth of magnespinel
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5249989A (en) Growth method of liquid phase epitaxial
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS52153374A (en) Vapor phase growth method for compound semiconductor of groups iii-v
JPS5258363A (en) Formation of semiconductor layer
JPS5382163A (en) Semiconductor vapor phase growth method
JPS53147684A (en) Method of and apparatus for liquid phase epitaxial growth
JPS53148278A (en) Method and apparatus of vapor phase growth of compound semiconductor crystals
JPS551137A (en) Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate
JPS5376980A (en) Gas phase growth method of compound semiconductor
JPS52155189A (en) Multiple layer crystal growth
JPS5228864A (en) Process for multilayer epitaxial growth
JPS53116775A (en) Vapor phase growth apparatus of semiconductor crystals
JPS5251865A (en) Vapor growth of group iii-v compound semiconductor crystal
JPS5364466A (en) Semiconductor crystal growth apparatus
JPS5387985A (en) Gaseous phase epitaxial growth method for compound semiconductor crystal
JPS51126037A (en) Semiconductor crystal growth method
JPS51146175A (en) Diode epitaxial growth method
JPS5249766A (en) Apparatus for producing semiconductor crystal
JPS5382263A (en) Epitaxial growth method
JPS52101698A (en) Vapor phase growth of gallium arsenide