JPS53126867A - Cvd apparatus - Google Patents

Cvd apparatus

Info

Publication number
JPS53126867A
JPS53126867A JP4144977A JP4144977A JPS53126867A JP S53126867 A JPS53126867 A JP S53126867A JP 4144977 A JP4144977 A JP 4144977A JP 4144977 A JP4144977 A JP 4144977A JP S53126867 A JPS53126867 A JP S53126867A
Authority
JP
Japan
Prior art keywords
letting
carrier gas
cvd apparatus
deposits
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4144977A
Other languages
Japanese (ja)
Other versions
JPS607378B2 (en
Inventor
Mitsuru Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4144977A priority Critical patent/JPS607378B2/en
Publication of JPS53126867A publication Critical patent/JPS53126867A/en
Publication of JPS607378B2 publication Critical patent/JPS607378B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45585—Compression of gas before it reaches the substrate

Abstract

PURPOSE:To avert the deposition of deposits on reaction tube wall face by letting part of carrier gas be flown from above of wafers simultaneously at the time of forming deposits on semiconductor wafers by letting reaction raw material gas react with the carrier gas.
JP4144977A 1977-04-13 1977-04-13 CVD equipment Expired JPS607378B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4144977A JPS607378B2 (en) 1977-04-13 1977-04-13 CVD equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4144977A JPS607378B2 (en) 1977-04-13 1977-04-13 CVD equipment

Publications (2)

Publication Number Publication Date
JPS53126867A true JPS53126867A (en) 1978-11-06
JPS607378B2 JPS607378B2 (en) 1985-02-23

Family

ID=12608674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4144977A Expired JPS607378B2 (en) 1977-04-13 1977-04-13 CVD equipment

Country Status (1)

Country Link
JP (1) JPS607378B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556111A (en) * 1978-10-20 1980-04-24 Nippon Oil Co Ltd Preparation of copolymer
JPS5931239U (en) * 1982-08-23 1984-02-27 日本電気ホームエレクトロニクス株式会社 semiconductor manufacturing equipment
JPS6050168A (en) * 1983-08-29 1985-03-19 Yoshihiro Hamakawa Production of thin solid film by photo cvd method
WO2005028701A3 (en) * 2003-04-16 2005-06-30 Cree Inc Methods and apparatus for controlling formation of deposits in a deposition system and deposition systems and methods including the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH029394U (en) * 1988-06-30 1990-01-22

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556111A (en) * 1978-10-20 1980-04-24 Nippon Oil Co Ltd Preparation of copolymer
JPS6320844B2 (en) * 1978-10-20 1988-04-30 Nippon Oil Co Ltd
JPS5931239U (en) * 1982-08-23 1984-02-27 日本電気ホームエレクトロニクス株式会社 semiconductor manufacturing equipment
JPS6050168A (en) * 1983-08-29 1985-03-19 Yoshihiro Hamakawa Production of thin solid film by photo cvd method
JPH0128830B2 (en) * 1983-08-29 1989-06-06 Yoshihiro Hamakawa
WO2005028701A3 (en) * 2003-04-16 2005-06-30 Cree Inc Methods and apparatus for controlling formation of deposits in a deposition system and deposition systems and methods including the same
US7118781B1 (en) 2003-04-16 2006-10-10 Cree, Inc. Methods for controlling formation of deposits in a deposition system and deposition methods including the same
US8430960B2 (en) 2003-04-16 2013-04-30 Cree, Inc. Deposition systems and susceptor assemblies for depositing a film on a substrate

Also Published As

Publication number Publication date
JPS607378B2 (en) 1985-02-23

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