JPS57121236A - Plasma processing and device thereof - Google Patents

Plasma processing and device thereof

Info

Publication number
JPS57121236A
JPS57121236A JP768681A JP768681A JPS57121236A JP S57121236 A JPS57121236 A JP S57121236A JP 768681 A JP768681 A JP 768681A JP 768681 A JP768681 A JP 768681A JP S57121236 A JPS57121236 A JP S57121236A
Authority
JP
Japan
Prior art keywords
susceptor
holes
wafers
plasma processing
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP768681A
Other languages
Japanese (ja)
Inventor
Itaru Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP768681A priority Critical patent/JPS57121236A/en
Publication of JPS57121236A publication Critical patent/JPS57121236A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce unevenness of plasma process of a plasma process device by a method wherein the area of opening or density of distribution of gas discharging holes provided in a susceptor is made to differ in accordance with the position thereof. CONSTITUTION:The gas discharging holes 9A, 9B, etc., are provided at the outside circumferential parts of the positions to be arranged with wafers on a susceptor 3 being put the wafers 6A, 6B, etc., thereon, and the area of opening or density of distribution of the holes thereof is made to differ in accordance with the positions on the susceptor to control flow quantity of gas to be discharged through the holes thereof. Accordingly because relations of reaction gas to the respective wafers are unified, unevenness in plasma processing is reduced.
JP768681A 1981-01-20 1981-01-20 Plasma processing and device thereof Pending JPS57121236A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP768681A JPS57121236A (en) 1981-01-20 1981-01-20 Plasma processing and device thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP768681A JPS57121236A (en) 1981-01-20 1981-01-20 Plasma processing and device thereof

Publications (1)

Publication Number Publication Date
JPS57121236A true JPS57121236A (en) 1982-07-28

Family

ID=11672663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP768681A Pending JPS57121236A (en) 1981-01-20 1981-01-20 Plasma processing and device thereof

Country Status (1)

Country Link
JP (1) JPS57121236A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60179033U (en) * 1984-05-08 1985-11-28 株式会社富士電機総合研究所 discharge electrode
JPS6261317A (en) * 1985-09-11 1987-03-18 Toshiba Corp Vapor growth method
EP1079423A1 (en) * 1998-04-09 2001-02-28 Tokyo Electron Limited Apparatus for gas processing

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60179033U (en) * 1984-05-08 1985-11-28 株式会社富士電機総合研究所 discharge electrode
JPS6261317A (en) * 1985-09-11 1987-03-18 Toshiba Corp Vapor growth method
EP1079423A1 (en) * 1998-04-09 2001-02-28 Tokyo Electron Limited Apparatus for gas processing
EP1079423A4 (en) * 1998-04-09 2005-06-08 Tokyo Electron Ltd Apparatus for gas processing

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