JPS54147783A - Cvd device - Google Patents

Cvd device

Info

Publication number
JPS54147783A
JPS54147783A JP5620978A JP5620978A JPS54147783A JP S54147783 A JPS54147783 A JP S54147783A JP 5620978 A JP5620978 A JP 5620978A JP 5620978 A JP5620978 A JP 5620978A JP S54147783 A JPS54147783 A JP S54147783A
Authority
JP
Japan
Prior art keywords
gas
inlet
reaction tube
inlets
outlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5620978A
Other languages
Japanese (ja)
Inventor
Hiroshi Isaji
Koki Namita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5620978A priority Critical patent/JPS54147783A/en
Publication of JPS54147783A publication Critical patent/JPS54147783A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To perform CVD, by providing at least one gas inlet within a given distance and making constant the deposit speed of oxide film along gas flow. CONSTITUTION:The water 3 is heated to a given temperature in the reaction tube 1, and the reaction gas and the carrier gas are introduced from the inlets 4 and 41 to 43. The gas from the inlet 41 is moved to the outlet 5 and the oxide film is produced and deposited on the wafer. In this case, the inlets 42 and 43 are placed with a distance more than five times the diameter of the reaction tube from the gas supply inlet to the direction of outlet, to compensate the reduction in the deposition speed due to gas supply deficiency. Thus, by independently controlling the supply gas amount from the inlet holes 41 to 43, the production deposition speed in the reaction tube is made uniform and uniform CVD film can be obtained.
JP5620978A 1978-05-11 1978-05-11 Cvd device Pending JPS54147783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5620978A JPS54147783A (en) 1978-05-11 1978-05-11 Cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5620978A JPS54147783A (en) 1978-05-11 1978-05-11 Cvd device

Publications (1)

Publication Number Publication Date
JPS54147783A true JPS54147783A (en) 1979-11-19

Family

ID=13020711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5620978A Pending JPS54147783A (en) 1978-05-11 1978-05-11 Cvd device

Country Status (1)

Country Link
JP (1) JPS54147783A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029554A (en) * 1988-03-31 1991-07-09 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including a temperature control mechanism
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon
USRE36328E (en) * 1988-03-31 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including temperature control mechanism

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029554A (en) * 1988-03-31 1991-07-09 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including a temperature control mechanism
USRE36328E (en) * 1988-03-31 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus including temperature control mechanism
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon

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