JPS5352356A - Deposition prevention method in hot wall type reaction furnace - Google Patents
Deposition prevention method in hot wall type reaction furnaceInfo
- Publication number
- JPS5352356A JPS5352356A JP12722276A JP12722276A JPS5352356A JP S5352356 A JPS5352356 A JP S5352356A JP 12722276 A JP12722276 A JP 12722276A JP 12722276 A JP12722276 A JP 12722276A JP S5352356 A JPS5352356 A JP S5352356A
- Authority
- JP
- Japan
- Prior art keywords
- reaction furnace
- prevention method
- wall type
- type reaction
- hot wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: Deposition of the materials being deposited on hot walls is prevented by flowing the laminar flow of an etch gas along the hot walls or doping a suitable amount of the etch gas in a reaction gas.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12722276A JPS5352356A (en) | 1976-10-25 | 1976-10-25 | Deposition prevention method in hot wall type reaction furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12722276A JPS5352356A (en) | 1976-10-25 | 1976-10-25 | Deposition prevention method in hot wall type reaction furnace |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5352356A true JPS5352356A (en) | 1978-05-12 |
Family
ID=14954737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12722276A Pending JPS5352356A (en) | 1976-10-25 | 1976-10-25 | Deposition prevention method in hot wall type reaction furnace |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5352356A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57128919A (en) * | 1980-12-20 | 1982-08-10 | Kenburitsuji Insutorumentsu Lt | Depositiong device |
JPS59125616A (en) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | Decompression vapor growth method |
JPS6057919A (en) * | 1983-09-09 | 1985-04-03 | Hitachi Ltd | Plasma cvd method |
JPS6094723A (en) * | 1983-10-28 | 1985-05-27 | Kokusai Denshin Denwa Co Ltd <Kdd> | Epitaxial vapor phase growing method and device for compound semiconductor multilayer structure |
JPS60253213A (en) * | 1984-05-30 | 1985-12-13 | Toshiba Mach Co Ltd | Vapor growth device and vapor growth method according to device thereof |
JPH02138473A (en) * | 1988-08-17 | 1990-05-28 | Tel Sagami Ltd | Treating device and treating method |
WO2014203535A1 (en) * | 2013-06-21 | 2014-12-24 | 株式会社デンソー | Silicon carbide semiconductor film-forming apparatus and film-forming method using same |
-
1976
- 1976-10-25 JP JP12722276A patent/JPS5352356A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0232783B2 (en) * | 1980-12-20 | 1990-07-23 | Kenburitsuji Insutorumentsu Ltd | |
JPS57128919A (en) * | 1980-12-20 | 1982-08-10 | Kenburitsuji Insutorumentsu Lt | Depositiong device |
JPS59125616A (en) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | Decompression vapor growth method |
JPH0416935B2 (en) * | 1982-12-28 | 1992-03-25 | Fujitsu Ltd | |
JPS6057919A (en) * | 1983-09-09 | 1985-04-03 | Hitachi Ltd | Plasma cvd method |
JPS6094723A (en) * | 1983-10-28 | 1985-05-27 | Kokusai Denshin Denwa Co Ltd <Kdd> | Epitaxial vapor phase growing method and device for compound semiconductor multilayer structure |
JPH0562454B2 (en) * | 1983-10-28 | 1993-09-08 | Kokusai Denshin Denwa Co Ltd | |
JPS60253213A (en) * | 1984-05-30 | 1985-12-13 | Toshiba Mach Co Ltd | Vapor growth device and vapor growth method according to device thereof |
JPH02138473A (en) * | 1988-08-17 | 1990-05-28 | Tel Sagami Ltd | Treating device and treating method |
US4989540A (en) * | 1988-08-17 | 1991-02-05 | Tel Sagami Limited | Apparatus for reaction treatment |
WO2014203535A1 (en) * | 2013-06-21 | 2014-12-24 | 株式会社デンソー | Silicon carbide semiconductor film-forming apparatus and film-forming method using same |
JP2015005658A (en) * | 2013-06-21 | 2015-01-08 | 株式会社デンソー | Silicon carbide semiconductor film deposition apparatus and film deposition method using the same |
US9879359B2 (en) | 2013-06-21 | 2018-01-30 | Denso Corporation | Silicon carbide semiconductor film-forming apparatus and film-forming method using the same |
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