JPS5352356A - Deposition prevention method in hot wall type reaction furnace - Google Patents

Deposition prevention method in hot wall type reaction furnace

Info

Publication number
JPS5352356A
JPS5352356A JP12722276A JP12722276A JPS5352356A JP S5352356 A JPS5352356 A JP S5352356A JP 12722276 A JP12722276 A JP 12722276A JP 12722276 A JP12722276 A JP 12722276A JP S5352356 A JPS5352356 A JP S5352356A
Authority
JP
Japan
Prior art keywords
reaction furnace
prevention method
wall type
type reaction
hot wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12722276A
Other languages
Japanese (ja)
Inventor
Akira Kanai
Hiroo Tochikubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12722276A priority Critical patent/JPS5352356A/en
Publication of JPS5352356A publication Critical patent/JPS5352356A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: Deposition of the materials being deposited on hot walls is prevented by flowing the laminar flow of an etch gas along the hot walls or doping a suitable amount of the etch gas in a reaction gas.
COPYRIGHT: (C)1978,JPO&Japio
JP12722276A 1976-10-25 1976-10-25 Deposition prevention method in hot wall type reaction furnace Pending JPS5352356A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12722276A JPS5352356A (en) 1976-10-25 1976-10-25 Deposition prevention method in hot wall type reaction furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12722276A JPS5352356A (en) 1976-10-25 1976-10-25 Deposition prevention method in hot wall type reaction furnace

Publications (1)

Publication Number Publication Date
JPS5352356A true JPS5352356A (en) 1978-05-12

Family

ID=14954737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12722276A Pending JPS5352356A (en) 1976-10-25 1976-10-25 Deposition prevention method in hot wall type reaction furnace

Country Status (1)

Country Link
JP (1) JPS5352356A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128919A (en) * 1980-12-20 1982-08-10 Kenburitsuji Insutorumentsu Lt Depositiong device
JPS59125616A (en) * 1982-12-28 1984-07-20 Fujitsu Ltd Decompression vapor growth method
JPS6057919A (en) * 1983-09-09 1985-04-03 Hitachi Ltd Plasma cvd method
JPS6094723A (en) * 1983-10-28 1985-05-27 Kokusai Denshin Denwa Co Ltd <Kdd> Epitaxial vapor phase growing method and device for compound semiconductor multilayer structure
JPS60253213A (en) * 1984-05-30 1985-12-13 Toshiba Mach Co Ltd Vapor growth device and vapor growth method according to device thereof
JPH02138473A (en) * 1988-08-17 1990-05-28 Tel Sagami Ltd Treating device and treating method
WO2014203535A1 (en) * 2013-06-21 2014-12-24 株式会社デンソー Silicon carbide semiconductor film-forming apparatus and film-forming method using same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0232783B2 (en) * 1980-12-20 1990-07-23 Kenburitsuji Insutorumentsu Ltd
JPS57128919A (en) * 1980-12-20 1982-08-10 Kenburitsuji Insutorumentsu Lt Depositiong device
JPS59125616A (en) * 1982-12-28 1984-07-20 Fujitsu Ltd Decompression vapor growth method
JPH0416935B2 (en) * 1982-12-28 1992-03-25 Fujitsu Ltd
JPS6057919A (en) * 1983-09-09 1985-04-03 Hitachi Ltd Plasma cvd method
JPS6094723A (en) * 1983-10-28 1985-05-27 Kokusai Denshin Denwa Co Ltd <Kdd> Epitaxial vapor phase growing method and device for compound semiconductor multilayer structure
JPH0562454B2 (en) * 1983-10-28 1993-09-08 Kokusai Denshin Denwa Co Ltd
JPS60253213A (en) * 1984-05-30 1985-12-13 Toshiba Mach Co Ltd Vapor growth device and vapor growth method according to device thereof
JPH02138473A (en) * 1988-08-17 1990-05-28 Tel Sagami Ltd Treating device and treating method
US4989540A (en) * 1988-08-17 1991-02-05 Tel Sagami Limited Apparatus for reaction treatment
WO2014203535A1 (en) * 2013-06-21 2014-12-24 株式会社デンソー Silicon carbide semiconductor film-forming apparatus and film-forming method using same
JP2015005658A (en) * 2013-06-21 2015-01-08 株式会社デンソー Silicon carbide semiconductor film deposition apparatus and film deposition method using the same
US9879359B2 (en) 2013-06-21 2018-01-30 Denso Corporation Silicon carbide semiconductor film-forming apparatus and film-forming method using the same

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