JPS6482614A - Chemical vapor growth equipment - Google Patents

Chemical vapor growth equipment

Info

Publication number
JPS6482614A
JPS6482614A JP24140587A JP24140587A JPS6482614A JP S6482614 A JPS6482614 A JP S6482614A JP 24140587 A JP24140587 A JP 24140587A JP 24140587 A JP24140587 A JP 24140587A JP S6482614 A JPS6482614 A JP S6482614A
Authority
JP
Japan
Prior art keywords
gas
uniformly
gas flow
control mechanism
flow control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24140587A
Inventor
Keiichi Akagawa
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24140587A priority Critical patent/JPS6482614A/en
Publication of JPS6482614A publication Critical patent/JPS6482614A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE:To prevent the occurrence of an eddy in the gas introducing section of a reaction furnace by providing a gas flow control mechanism on the gas introducing side of the, reaction furnace so that the gas flow introduced into the reaction furnace uniformly diffuses centering the vertex of a circular cone, thereby uniformly supplying the gas onto a crystal substrate. CONSTITUTION:A gas flow control mechanism 20 is provided in the connecting section of a throttle section 12 of a reaction tube 11 and a gas introducing pipe 13. This gas flow control mechanism 20 is provided with a plurality of ports 21 for drawing out the gas on a circular arc centering the intersection point on the extension of the taper of the throttle section 12, or the vertex P of a circular cone making the throttle section 12, and having any radius from this center P. The gas introduced from the gas introducing pipe 13 diffuses along the taper of the throttle section 12 of the reaction tube 11 and flows uniformly by passing through the ports 21 for drawing the gas of the gas flow control mechanism 20. Further, if the holes outside the circular arc are made larger, the effect of the resistance of the flow due to the tube wall of the reaction tube 11 becomes small, whereby the gas can uniformly be supplied to a crystal substrate 15. Also, since the gas flow diffuses uniformly, the occurrence of an eddy in the shoulder of the reaction tube 11 can be prevented.
JP24140587A 1987-09-25 1987-09-25 Chemical vapor growth equipment Pending JPS6482614A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24140587A JPS6482614A (en) 1987-09-25 1987-09-25 Chemical vapor growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24140587A JPS6482614A (en) 1987-09-25 1987-09-25 Chemical vapor growth equipment

Publications (1)

Publication Number Publication Date
JPS6482614A true JPS6482614A (en) 1989-03-28

Family

ID=17073794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24140587A Pending JPS6482614A (en) 1987-09-25 1987-09-25 Chemical vapor growth equipment

Country Status (1)

Country Link
JP (1) JPS6482614A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5106453A (en) * 1990-01-29 1992-04-21 At&T Bell Laboratories MOCVD method and apparatus
US5284519A (en) * 1990-05-16 1994-02-08 Simon Fraser University Inverted diffuser stagnation point flow reactor for vapor deposition of thin films
CN102388162A (en) * 2009-03-03 2012-03-21 S.O.I.Tec绝缘体上硅技术公司 Gas injectors for cvd systems with the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5106453A (en) * 1990-01-29 1992-04-21 At&T Bell Laboratories MOCVD method and apparatus
US5284519A (en) * 1990-05-16 1994-02-08 Simon Fraser University Inverted diffuser stagnation point flow reactor for vapor deposition of thin films
CN102388162A (en) * 2009-03-03 2012-03-21 S.O.I.Tec绝缘体上硅技术公司 Gas injectors for cvd systems with the same

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