JPS56278A - Method and apparatus for plasma ethcing of aluminum - Google Patents

Abstract

PURPOSE:To permit many substrates to be uniformly etched by a method wherein Al layer on substrates is applied with a series of gas plasma etching such that large or small selected high frequency power is applied, the reaction is stopped by detection of the end point, etc. CONSTITUTION:An apparatus contains the first reaction chamber 1 to clean semiconductor substrates 10, the second reaction chamber 2 using gas plasma contg. halogen cpd., the third reaction chamber 3 in which the applied high frequency power is selected smaller than that in the second chamber, the fourth reaction chamber 4 in which the etching is automatically stopped by the result of detection of a means 45 to detect the etching end point of Al layer on the substrates 10, and an O2-contg. gas plasma reaction chamber 5 to remove resist. These reaction chambers are connected in series via gate valves 23, 43, 53 to constitute a gas phase reaction part. A transfer truck not shown is used to sequentially transfer the substrates 10 in each of the reaction chambers. In this construction, the arrangement allows many substrates to undergo continuous, uniform, and automatic etching treatment.