JPS57136932A - Photochemical reaction device - Google Patents

Photochemical reaction device

Info

Publication number
JPS57136932A
JPS57136932A JP2203181A JP2203181A JPS57136932A JP S57136932 A JPS57136932 A JP S57136932A JP 2203181 A JP2203181 A JP 2203181A JP 2203181 A JP2203181 A JP 2203181A JP S57136932 A JPS57136932 A JP S57136932A
Authority
JP
Japan
Prior art keywords
gases
vapor phase
films
activated
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2203181A
Other languages
Japanese (ja)
Other versions
JPS6140034B2 (en
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP2203181A priority Critical patent/JPS57136932A/en
Publication of JPS57136932A publication Critical patent/JPS57136932A/en
Publication of JPS6140034B2 publication Critical patent/JPS6140034B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122Incoherent waves
    • B01J19/123Ultraviolet light

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To cause vapor phase photochemically grown films stably at low temp. by activating gases by means of light first then conducting the activated gases to cause vapor phase reaction on the surfaces of substrates thereby forming the films. CONSTITUTION:In a vapor phase photochemical growth device, gases are introduced through cocks 1, 1', and first they are fed to gas activating parts 3, 3', where light is irradiated from a lamp 5 to the windows 4, 4' of the light introducing parts. Since the gases are activated by these, they are conducted to a reaction part 7, where films of Si3, N4 are formed on an Si wafer 8. The gases activated by the lamp 5 do not form products on the windows 4 of the activating parts 3, thus the stable photochemical reaction is effected at all times and the vapor phase chemically grown films are formed stably at low temp.
JP2203181A 1981-02-17 1981-02-17 Photochemical reaction device Granted JPS57136932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2203181A JPS57136932A (en) 1981-02-17 1981-02-17 Photochemical reaction device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2203181A JPS57136932A (en) 1981-02-17 1981-02-17 Photochemical reaction device

Publications (2)

Publication Number Publication Date
JPS57136932A true JPS57136932A (en) 1982-08-24
JPS6140034B2 JPS6140034B2 (en) 1986-09-06

Family

ID=12071601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2203181A Granted JPS57136932A (en) 1981-02-17 1981-02-17 Photochemical reaction device

Country Status (1)

Country Link
JP (1) JPS57136932A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5982720A (en) * 1982-11-02 1984-05-12 Nec Corp Optical vapor growth method
JPS59182520A (en) * 1983-04-01 1984-10-17 Hitachi Ltd Optical cvd method
JP2007063637A (en) * 2005-09-01 2007-03-15 Ulvac Japan Ltd Method for producing organic thin film, and optical cvd system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06181423A (en) * 1992-12-14 1994-06-28 Kawasaki Steel Corp Digital filter

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5982720A (en) * 1982-11-02 1984-05-12 Nec Corp Optical vapor growth method
JPH0136694B2 (en) * 1982-11-02 1989-08-02 Nippon Electric Co
JPS59182520A (en) * 1983-04-01 1984-10-17 Hitachi Ltd Optical cvd method
JP2007063637A (en) * 2005-09-01 2007-03-15 Ulvac Japan Ltd Method for producing organic thin film, and optical cvd system
JP4690148B2 (en) * 2005-09-01 2011-06-01 株式会社アルバック Organic thin film manufacturing method and photo-CVD apparatus

Also Published As

Publication number Publication date
JPS6140034B2 (en) 1986-09-06

Similar Documents

Publication Publication Date Title
GB2141444A (en) Chemical vapor deposition of titanium nitride and like films
DE69027496D1 (en) Gas supply device and its use for a film deposition system
AU555506B2 (en) Photochemical vapour deposition method and apparatus
JPS5211176A (en) Activation gas reaction apparatus
JPS5358490A (en) Forming method for film
JPS57136932A (en) Photochemical reaction device
JPS57136931A (en) Photochemical reaction device
GB1025819A (en) Germanium deposition
JPS5398775A (en) Gas phase growth unit
JPS5211088A (en) Method of generating gas at standard concentration
JPS5713746A (en) Vapor-phase growing apparatus
JPS5483971A (en) Crosslinked olefinic resin film having improved heat sealability
JPS56164523A (en) Vapor phase growth of semiconductor
JPS55102237A (en) Method and apparatus for plasma processing
JPS52155603A (en) Loquefaction of polymer waste
JPS5325604A (en) Gasification of thermal decomposition residues and its apparatus
DE3650482T2 (en) Method and device for exothermic reaction between gases
JPS52904A (en) Process for recovering activity of washing liquid for acetylene gas purification
JPS5420971A (en) Vapor phase growing device
JPS5329065A (en) Vapour phase reaction unit of semiconductor
JPS51149165A (en) A process for decomposing ammonia gas
JPS5288274A (en) Photochemical reaction
JPS5234668A (en) Gaseous phase growing process of semiconductor
JPS544571A (en) Plasma treating apparatus
JPS56109895A (en) Gaseous phase growing method for semiconductor