JPS5615031A - Molecular beam epitaxial growing apparatus - Google Patents

Molecular beam epitaxial growing apparatus

Info

Publication number
JPS5615031A
JPS5615031A JP9060179A JP9060179A JPS5615031A JP S5615031 A JPS5615031 A JP S5615031A JP 9060179 A JP9060179 A JP 9060179A JP 9060179 A JP9060179 A JP 9060179A JP S5615031 A JPS5615031 A JP S5615031A
Authority
JP
Japan
Prior art keywords
substrate
manipulator
gate valve
retaining
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9060179A
Other languages
Japanese (ja)
Other versions
JPS63938B2 (en
Inventor
Seiichi Nagata
Tsuneo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9060179A priority Critical patent/JPS5615031A/en
Publication of JPS5615031A publication Critical patent/JPS5615031A/en
Publication of JPS63938B2 publication Critical patent/JPS63938B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To execute respective steps simultaneously in parallel and enhance the productivity in a molecular beam epitaxial growing apparatus by providing vacuum chambers at three places or more, connecting a gate valve between the vacuum chambers to each other, and providing a manipulator for phase-shifting repeating and retaining a substrate. CONSTITUTION:After completing epitaxial growth on the first substrate in a crsytal growth chamber 3, a gate valve 5 is opened, the first substrate is repeated by a transcribing manipulator (M)7, removed from a retaining manipulator (M)9, and is temporarily retained in a retaining manipulator (M)8. Then, it is retained by the M8, the substrate cleaned on the surface is installed by the M7 from the M8 to the M9, and the gate valve is closed. Subsequently, it is installed in the phase-shifting manipulator (M)6, the substrate already heated and degassed is introduced into a secondary preliminary chamber 2 by opening the gate valve 4, and is installed in the M8. Further, the substrate grown and retained on the M8 is transcribed from the M6 to the first preliminary chamber 1, and the valve 4 is closed. Thereafter, the substrate in the chamber 1 is pulled out into the atmosphere, and a new substrate is then set in the M6.
JP9060179A 1979-07-17 1979-07-17 Molecular beam epitaxial growing apparatus Granted JPS5615031A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9060179A JPS5615031A (en) 1979-07-17 1979-07-17 Molecular beam epitaxial growing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9060179A JPS5615031A (en) 1979-07-17 1979-07-17 Molecular beam epitaxial growing apparatus

Publications (2)

Publication Number Publication Date
JPS5615031A true JPS5615031A (en) 1981-02-13
JPS63938B2 JPS63938B2 (en) 1988-01-09

Family

ID=14002984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9060179A Granted JPS5615031A (en) 1979-07-17 1979-07-17 Molecular beam epitaxial growing apparatus

Country Status (1)

Country Link
JP (1) JPS5615031A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57207331A (en) * 1981-06-15 1982-12-20 Canon Inc Manufacture of semiconductor device
US4508590A (en) * 1983-09-16 1985-04-02 Raphael Kaplan Method for the deposition of high-quality crystal epitaxial films of iron
JPS6183699A (en) * 1984-09-28 1986-04-28 Hitachi Ltd Molecular beam epitaxial device
JPH035395A (en) * 1989-05-31 1991-01-11 Hitachi Ltd Mbe device and its operational method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404661A (en) * 1965-08-26 1968-10-08 Sperry Rand Corp Evaporation system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404661A (en) * 1965-08-26 1968-10-08 Sperry Rand Corp Evaporation system

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57207331A (en) * 1981-06-15 1982-12-20 Canon Inc Manufacture of semiconductor device
US4508590A (en) * 1983-09-16 1985-04-02 Raphael Kaplan Method for the deposition of high-quality crystal epitaxial films of iron
JPS6183699A (en) * 1984-09-28 1986-04-28 Hitachi Ltd Molecular beam epitaxial device
JPH0375515B2 (en) * 1984-09-28 1991-12-02 Hitachi Ltd
JPH035395A (en) * 1989-05-31 1991-01-11 Hitachi Ltd Mbe device and its operational method
JPH0549636B2 (en) * 1989-05-31 1993-07-26 Hitachi Ltd

Also Published As

Publication number Publication date
JPS63938B2 (en) 1988-01-09

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