JPS6422023A - Manufacture of semiconductor and semiconductor production device used for said manufacture - Google Patents

Abstract

PURPOSE:To remove air staying among semiconductor substrates, and to prevent the formation of thin oxide films on the semiconductor substrates by flowing an inert gas among the semiconductor substrates and exhausting the inert gas by a vacuum system mounted opposed to an exhaust nozzle for the inert gas when the semiconductor substrates are introduced into a reaction chamber. CONSTITUTION:Semiconductor substrates 4 are arranged onto a boat 6, a valve 14 and a valve 16 are opened, and an inert gas 20 is injected among the semiconductor substrates 4 from an injection nozzle 10 while the boat 6 and the semiconductor substrates 4 are inserted into a reaction chamber 2 by a boat loader 8, exhausting the insert gas 20 by an exhaust nozzle 12. When insertion is completed, the valve 14 and the valve 16 are closed, and the boat loader 8 is returned to an original position. A door for the reaction chamber 2 is closed, a residual gas in the reaction chamber 2 is removed, and a reaction gas is introduced into the reaction chamber 2, thus shaping a thin-film. Accordingly, air staying among the semiconductor substrates 4 can be removed, thus preventing the formation of thin oxide films on the semiconductor substrates 4 before the formation of the film.