GB1515318A - Diffusion-doping semiconductors - Google Patents

Diffusion-doping semiconductors

Info

Publication number
GB1515318A
GB1515318A GB3764575A GB3764575A GB1515318A GB 1515318 A GB1515318 A GB 1515318A GB 3764575 A GB3764575 A GB 3764575A GB 3764575 A GB3764575 A GB 3764575A GB 1515318 A GB1515318 A GB 1515318A
Authority
GB
United Kingdom
Prior art keywords
chamber
exhaust passage
source
semi
flushing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3764575A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1515318A publication Critical patent/GB1515318A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

1515318 Semi-conductor device manufacture PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 12 Sept 1975 [16 Sept 1974] 37645/75 Heading H1K In diffusing impurity into a semi-conductor body in a chamber with a gas inlet at one end and a restricted exhaust passage at the other, a solid or liquid phase dopant source is located adjacent the exhaust passage and after cleaning the chamber by flushing with gas introduced at the inlet the chamber is closed off apart from the exhaust passage and the source and semiconductor body brought to processing temperature while a cold zone is maintained at or in direct communication with the inlet end of the chamber. After diffusion the chamber is opened at the source end to remove the source and flushed as before prior to reducing the temperature of the semi-conductor body. Typically the body 22 is one of a number of GaAsP plates 400 Á thick on a carrier 21 (Fig. 2) and the source 23, of pure zinc, is mounted in cover 25 which fits loosely in the chamber 24 to provide the exhaust passage. Nitrogen for the initial and final flushings is introduced via valve 34, the chamber being moved into the preheated furnace 30 after the initial flushing, section 33 of inlet tube 29 remaining outside to constitute the cold zone. After diffusion cover 25 is removed prior to flushing. When using a modified apparatus in which the cold zone is in the chamber itself and the exhaust passage in the cover the chamber is held throughout in the furnace, and the temperature profile of the latter varied.
GB3764575A 1974-09-16 1975-09-12 Diffusion-doping semiconductors Expired GB1515318A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431243A FR2284982A1 (en) 1974-09-16 1974-09-16 METHOD OF DIFFUSION OF IMPURITIES IN SEMICONDUCTOR BODIES

Publications (1)

Publication Number Publication Date
GB1515318A true GB1515318A (en) 1978-06-21

Family

ID=9143118

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3764575A Expired GB1515318A (en) 1974-09-16 1975-09-12 Diffusion-doping semiconductors

Country Status (5)

Country Link
JP (1) JPS5164371A (en)
CA (1) CA1061225A (en)
DE (1) DE2540053C2 (en)
FR (1) FR2284982A1 (en)
GB (1) GB1515318A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114855261A (en) * 2022-03-21 2022-08-05 西北工业大学 Gas phase doping method for growing compound semiconductor single crystal based on horizontal gradient solidification method

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742008Y2 (en) * 1976-10-08 1982-09-16
FR2409791A1 (en) * 1977-11-25 1979-06-22 Silicium Semiconducteur Ssc Doping semiconductor wafers - by diffusion in a furnace-heated tube closed at the ends using an atmosphere of pressurised argon
FR2479278A1 (en) * 1980-03-26 1981-10-02 Loic Henry Diffusion of dopant into semiconductor substrate - using open tube in gas stream contg. semiconductor component
JPS60236471A (en) * 1984-05-10 1985-11-25 新光電気工業株式会社 Sealed glass terminal
JP2662318B2 (en) * 1991-03-13 1997-10-08 株式会社日立製作所 Method of diffusing impurities into semiconductor substrate

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2178751B1 (en) * 1972-04-05 1974-10-18 Radiotechnique Compelec

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114855261A (en) * 2022-03-21 2022-08-05 西北工业大学 Gas phase doping method for growing compound semiconductor single crystal based on horizontal gradient solidification method

Also Published As

Publication number Publication date
DE2540053A1 (en) 1976-03-25
JPS5164371A (en) 1976-06-03
DE2540053C2 (en) 1983-12-01
FR2284982A1 (en) 1976-04-09
JPS5238388B2 (en) 1977-09-28
FR2284982B1 (en) 1979-02-16
CA1061225A (en) 1979-08-28

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee