JPS6410622A - Method of growing amorphous substance - Google Patents

Abstract

PURPOSE:To control the growth of amorphous silicon effectively and to form a high- quality film by a method wherein, after a hydrogenbased raw gas and a fluorine-based raw gas have been decomposed separately, they are supplied to the surface where the film is grown and the amorphous silicon is grown. CONSTITUTION:An F-based raw gas 1 and an H-based raw gas 2 as different kinds of raw gases are decomposed separately in a first decomposition chamber and a second decomposition chamber 9, 10 by using, e.g., a glow discharge method or the like. These raw gases are supplied alternately to the surface where a film is grown on a substrate held by a substrate holder 4 inside a reaction chamber 6. By this setup, the F-based raw gas 1 ans the H-based raw gas 2 excluding a molecule (or a radical) adsorbed onto the surface of the substrate do not exist simultaneously. Accordingly, a reaction is caused between radicals of the individual raw gases 1, 2 on the surface of the substrate; the growth is limited only to the surface of the substrate. The raw gases 1, 2 are decomposed in the first decomposition chamber and the second decomposition chamber 9, 10 immediately before the gases are introduced into the reaction chamber 6; accordingly, amorphous silicon which has been grown on the substrate inside the reaction chamber 6 is not damaged by a plasma during a decomposition process of the gases.