JPS6450427A - Plasma processing - Google Patents
Plasma processingInfo
- Publication number
- JPS6450427A JPS6450427A JP20628587A JP20628587A JPS6450427A JP S6450427 A JPS6450427 A JP S6450427A JP 20628587 A JP20628587 A JP 20628587A JP 20628587 A JP20628587 A JP 20628587A JP S6450427 A JPS6450427 A JP S6450427A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- reaction
- plasma
- decomposition reaction
- decomposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To remove residual products in a chamber effectively after a plasma treatment, by introducing different gases for decomposing residual products in the plasma treatment into the chamber, and performing first and second decomposition reactions by plasma discharge. CONSTITUTION:When the forming reaction of an insulating film is finished, a wafer 4 is taken out of a chamber 2. Thereafter, self-cleaning gases (CF4 and O2) and introduced into the chamber 2 by specified amounts from gas supply sources S3 and S4. Plasma is discharged, and the decomposition reaction of the material of the insulating film is made to progress. Thus, the first decomposition reaction is carried out. Then, a gas (O2) for second decomposition reaction is introduced into the chamber 2 by a specified amount, and the plasma is discharged. Then, the intermediate reaction body in the first decomposition reaction, which remains in the chamber 2, and secondary reaction products are decomposed and exhausted. In this way, all the residual products in the chamber 2 can be effectively removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20628587A JPS6450427A (en) | 1987-08-21 | 1987-08-21 | Plasma processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20628587A JPS6450427A (en) | 1987-08-21 | 1987-08-21 | Plasma processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450427A true JPS6450427A (en) | 1989-02-27 |
Family
ID=16520778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20628587A Pending JPS6450427A (en) | 1987-08-21 | 1987-08-21 | Plasma processing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450427A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61293480A (en) * | 1985-06-21 | 1986-12-24 | ヤマハ株式会社 | Racket frame |
| US5507167A (en) * | 1993-04-27 | 1996-04-16 | Gkn Automotive Ag | Process and device for providing a shaft with splines |
| WO2001008209A1 (en) * | 1999-07-27 | 2001-02-01 | Applied Materials, Inc. | Multiple stage cleaning for plasma etching chambers |
| KR100295700B1 (en) * | 1995-07-13 | 2001-10-24 | 조셉 제이. 스위니 | Method and apparatus for washing residues from chemical vapor deposition |
| US6322714B1 (en) | 1997-11-12 | 2001-11-27 | Applied Materials Inc. | Process for etching silicon-containing material on substrates |
| US6699399B1 (en) | 1997-11-12 | 2004-03-02 | Applied Materials, Inc | Self-cleaning etch process |
| US6797188B1 (en) | 1997-11-12 | 2004-09-28 | Meihua Shen | Self-cleaning process for etching silicon-containing material |
| KR100485112B1 (en) * | 2001-04-17 | 2005-04-25 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | Method of forming a thin film |
| WO2007015050A1 (en) * | 2005-08-04 | 2007-02-08 | Aviza Technology Limited | A method of processing substrates |
-
1987
- 1987-08-21 JP JP20628587A patent/JPS6450427A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61293480A (en) * | 1985-06-21 | 1986-12-24 | ヤマハ株式会社 | Racket frame |
| US5507167A (en) * | 1993-04-27 | 1996-04-16 | Gkn Automotive Ag | Process and device for providing a shaft with splines |
| KR100295700B1 (en) * | 1995-07-13 | 2001-10-24 | 조셉 제이. 스위니 | Method and apparatus for washing residues from chemical vapor deposition |
| US6322714B1 (en) | 1997-11-12 | 2001-11-27 | Applied Materials Inc. | Process for etching silicon-containing material on substrates |
| US6699399B1 (en) | 1997-11-12 | 2004-03-02 | Applied Materials, Inc | Self-cleaning etch process |
| US6797188B1 (en) | 1997-11-12 | 2004-09-28 | Meihua Shen | Self-cleaning process for etching silicon-containing material |
| US6872322B1 (en) | 1997-11-12 | 2005-03-29 | Applied Materials, Inc. | Multiple stage process for cleaning process chambers |
| WO2001008209A1 (en) * | 1999-07-27 | 2001-02-01 | Applied Materials, Inc. | Multiple stage cleaning for plasma etching chambers |
| KR100485112B1 (en) * | 2001-04-17 | 2005-04-25 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | Method of forming a thin film |
| WO2007015050A1 (en) * | 2005-08-04 | 2007-02-08 | Aviza Technology Limited | A method of processing substrates |
| US8486198B2 (en) | 2005-08-04 | 2013-07-16 | Aviza Technology Limited | Method of processing substrates |
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