JPS561527A - Exhaust gas disposal method for semiconductor manufacturing equipment - Google Patents

Exhaust gas disposal method for semiconductor manufacturing equipment

Info

Publication number
JPS561527A
JPS561527A JP7711179A JP7711179A JPS561527A JP S561527 A JPS561527 A JP S561527A JP 7711179 A JP7711179 A JP 7711179A JP 7711179 A JP7711179 A JP 7711179A JP S561527 A JPS561527 A JP S561527A
Authority
JP
Japan
Prior art keywords
gas
sih4
self
concentration
reaction tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7711179A
Other languages
Japanese (ja)
Other versions
JPS5839373B2 (en
Inventor
Atsushi Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7711179A priority Critical patent/JPS5839373B2/en
Publication of JPS561527A publication Critical patent/JPS561527A/en
Publication of JPS5839373B2 publication Critical patent/JPS5839373B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To enable the application of self-inflammable exhaust gas to decompression gas-phase growing equipment without reducing the concentration of the self- inflammable gas, by introducing O2 gas or O2-containing inert gas into the self- inflammable exhaust gas so that they react with each other and using a water pump to suck and discharge the gases. CONSTITUTION:SiH4 gas released from an SiH4 gas inlet pipe 1 by an exhaust unit 2 is conducted to a reaction tube 3. O2 gas or O2-containing inert gas is introduced into the reaction tube 3 by a blower 4. The SiH4 gas reacts with O2 in the reaction tube 3 so that the SiH4 gas burns and SiO2 and H2O are produced. The resulting products and gases are sucked by a water pump 5. The solid SiO2 is contained in water supplied by the pump 5 and is discharged together with the water through a drain port 6. The remaining O2 and inert gas are released through an exhaust port 7. According to this constitution, the SiH4 gas of 100% in concentration can be used for decompression gas-phase growing equipment without reducing the concentration of the gas. As a result, numerous semiconductor wafers can be treated.
JP7711179A 1979-06-19 1979-06-19 Exhaust treatment method for semiconductor manufacturing equipment Expired JPS5839373B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7711179A JPS5839373B2 (en) 1979-06-19 1979-06-19 Exhaust treatment method for semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7711179A JPS5839373B2 (en) 1979-06-19 1979-06-19 Exhaust treatment method for semiconductor manufacturing equipment

Publications (2)

Publication Number Publication Date
JPS561527A true JPS561527A (en) 1981-01-09
JPS5839373B2 JPS5839373B2 (en) 1983-08-30

Family

ID=13624667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7711179A Expired JPS5839373B2 (en) 1979-06-19 1979-06-19 Exhaust treatment method for semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JPS5839373B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60222112A (en) * 1984-04-20 1985-11-06 Kanegafuchi Chem Ind Co Ltd Hollow yarn-shaped filter and its manufacture
JPS63101629A (en) * 1986-10-17 1988-05-06 Matsushita Electric Ind Co Ltd Kitchen range
JPS6391063U (en) * 1986-12-01 1988-06-13
JPH01121630A (en) * 1987-11-05 1989-05-15 Sanyo Electric Co Ltd Gas table
JPH0221616A (en) * 1988-07-11 1990-01-24 Fuji Photo Film Co Ltd Heat treatment equipment for semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60222112A (en) * 1984-04-20 1985-11-06 Kanegafuchi Chem Ind Co Ltd Hollow yarn-shaped filter and its manufacture
JPS6336805B2 (en) * 1984-04-20 1988-07-21 Kanegafuchi Chemical Ind
JPS63101629A (en) * 1986-10-17 1988-05-06 Matsushita Electric Ind Co Ltd Kitchen range
JPS6391063U (en) * 1986-12-01 1988-06-13
JPH01121630A (en) * 1987-11-05 1989-05-15 Sanyo Electric Co Ltd Gas table
JPH0221616A (en) * 1988-07-11 1990-01-24 Fuji Photo Film Co Ltd Heat treatment equipment for semiconductor device

Also Published As

Publication number Publication date
JPS5839373B2 (en) 1983-08-30

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