JPS57194522A - Thermal treatment of semiconductor wafer - Google Patents

Thermal treatment of semiconductor wafer

Info

Publication number
JPS57194522A
JPS57194522A JP7939281A JP7939281A JPS57194522A JP S57194522 A JPS57194522 A JP S57194522A JP 7939281 A JP7939281 A JP 7939281A JP 7939281 A JP7939281 A JP 7939281A JP S57194522 A JPS57194522 A JP S57194522A
Authority
JP
Japan
Prior art keywords
area
semiconductor wafers
diffusion
steam
inert gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7939281A
Other languages
Japanese (ja)
Other versions
JPH0373134B2 (en
Inventor
Takeshi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP7939281A priority Critical patent/JPS57194522A/en
Publication of JPS57194522A publication Critical patent/JPS57194522A/en
Publication of JPH0373134B2 publication Critical patent/JPH0373134B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F22STEAM GENERATION
    • F22BMETHODS OF STEAM GENERATION; STEAM BOILERS
    • F22B1/00Methods of steam generation characterised by form of heating method
    • F22B1/003Methods of steam generation characterised by form of heating method using combustion of hydrogen with oxygen

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)

Abstract

PURPOSE:To apply inert gas treatment or impurity diffusion in wet condition to semiconductor wafers by performing oxygen-hydrogen combustion in a different area of the inside of a diffusion oven core tube from the area where semiconductor wafers exist. CONSTITUTION:Oxygen-hydrogen combustion is performed in a different area 22 of the inside of a diffusion oven core tube from the area 10 where semiconductor wafers exist. Only steam generated in the area 22 is introduced into the semiconductor wafers existing area 10 via a penetration hole 23 of a section board 21. At this time, inert gas or impurity gas 26 for diffusion is supplied directly into the semiconductor wafers existing area 10 and is mixed with the steam above mentioned and the semiconductor wafers are treated by heat. With this constitution, pure steam which contains almost no oxygen is generated and this steam is introduced into the semiconductor wafers existing area. Accordingly, the steam is mixed with inert gas or impurity gas for diffusion which are supplied directly to the above area, so that wett-annealing and diffusion can be performed.
JP7939281A 1981-05-27 1981-05-27 Thermal treatment of semiconductor wafer Granted JPS57194522A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7939281A JPS57194522A (en) 1981-05-27 1981-05-27 Thermal treatment of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7939281A JPS57194522A (en) 1981-05-27 1981-05-27 Thermal treatment of semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS57194522A true JPS57194522A (en) 1982-11-30
JPH0373134B2 JPH0373134B2 (en) 1991-11-20

Family

ID=13688585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7939281A Granted JPS57194522A (en) 1981-05-27 1981-05-27 Thermal treatment of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS57194522A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295425A (en) * 1988-02-29 1989-11-29 Tel Sagami Ltd Oxidizing apparatus
JPH01319940A (en) * 1988-06-22 1989-12-26 Kimmon Mfg Co Ltd External combustion oxidizing apparatus
WO2002086958A1 (en) * 2001-04-23 2002-10-31 Mattson Thermal Products Gmbh Method and device for the production of process gases

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5479034U (en) * 1977-11-15 1979-06-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5479034U (en) * 1977-11-15 1979-06-05

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01295425A (en) * 1988-02-29 1989-11-29 Tel Sagami Ltd Oxidizing apparatus
JPH01319940A (en) * 1988-06-22 1989-12-26 Kimmon Mfg Co Ltd External combustion oxidizing apparatus
WO2002086958A1 (en) * 2001-04-23 2002-10-31 Mattson Thermal Products Gmbh Method and device for the production of process gases
US7144826B2 (en) 2001-04-23 2006-12-05 Mattson Thermal Products Method and apparatus for the production of process gas that includes water vapor and hydrogen formed by burning oxygen in a hydrogen-rich environment

Also Published As

Publication number Publication date
JPH0373134B2 (en) 1991-11-20

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