JPS57194522A - Thermal treatment of semiconductor wafer - Google Patents
Thermal treatment of semiconductor waferInfo
- Publication number
- JPS57194522A JPS57194522A JP7939281A JP7939281A JPS57194522A JP S57194522 A JPS57194522 A JP S57194522A JP 7939281 A JP7939281 A JP 7939281A JP 7939281 A JP7939281 A JP 7939281A JP S57194522 A JPS57194522 A JP S57194522A
- Authority
- JP
- Japan
- Prior art keywords
- area
- semiconductor wafers
- diffusion
- steam
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F22—STEAM GENERATION
- F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
- F22B1/00—Methods of steam generation characterised by form of heating method
- F22B1/003—Methods of steam generation characterised by form of heating method using combustion of hydrogen with oxygen
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
Abstract
PURPOSE:To apply inert gas treatment or impurity diffusion in wet condition to semiconductor wafers by performing oxygen-hydrogen combustion in a different area of the inside of a diffusion oven core tube from the area where semiconductor wafers exist. CONSTITUTION:Oxygen-hydrogen combustion is performed in a different area 22 of the inside of a diffusion oven core tube from the area 10 where semiconductor wafers exist. Only steam generated in the area 22 is introduced into the semiconductor wafers existing area 10 via a penetration hole 23 of a section board 21. At this time, inert gas or impurity gas 26 for diffusion is supplied directly into the semiconductor wafers existing area 10 and is mixed with the steam above mentioned and the semiconductor wafers are treated by heat. With this constitution, pure steam which contains almost no oxygen is generated and this steam is introduced into the semiconductor wafers existing area. Accordingly, the steam is mixed with inert gas or impurity gas for diffusion which are supplied directly to the above area, so that wett-annealing and diffusion can be performed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7939281A JPS57194522A (en) | 1981-05-27 | 1981-05-27 | Thermal treatment of semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7939281A JPS57194522A (en) | 1981-05-27 | 1981-05-27 | Thermal treatment of semiconductor wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57194522A true JPS57194522A (en) | 1982-11-30 |
JPH0373134B2 JPH0373134B2 (en) | 1991-11-20 |
Family
ID=13688585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7939281A Granted JPS57194522A (en) | 1981-05-27 | 1981-05-27 | Thermal treatment of semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57194522A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01295425A (en) * | 1988-02-29 | 1989-11-29 | Tel Sagami Ltd | Oxidizing apparatus |
JPH01319940A (en) * | 1988-06-22 | 1989-12-26 | Kimmon Mfg Co Ltd | External combustion oxidizing apparatus |
WO2002086958A1 (en) * | 2001-04-23 | 2002-10-31 | Mattson Thermal Products Gmbh | Method and device for the production of process gases |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5479034U (en) * | 1977-11-15 | 1979-06-05 |
-
1981
- 1981-05-27 JP JP7939281A patent/JPS57194522A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5479034U (en) * | 1977-11-15 | 1979-06-05 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01295425A (en) * | 1988-02-29 | 1989-11-29 | Tel Sagami Ltd | Oxidizing apparatus |
JPH01319940A (en) * | 1988-06-22 | 1989-12-26 | Kimmon Mfg Co Ltd | External combustion oxidizing apparatus |
WO2002086958A1 (en) * | 2001-04-23 | 2002-10-31 | Mattson Thermal Products Gmbh | Method and device for the production of process gases |
US7144826B2 (en) | 2001-04-23 | 2006-12-05 | Mattson Thermal Products | Method and apparatus for the production of process gas that includes water vapor and hydrogen formed by burning oxygen in a hydrogen-rich environment |
Also Published As
Publication number | Publication date |
---|---|
JPH0373134B2 (en) | 1991-11-20 |
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