JPS5470763A - Method and apparatus for uniform diffusion - Google Patents

Method and apparatus for uniform diffusion

Info

Publication number
JPS5470763A
JPS5470763A JP13805777A JP13805777A JPS5470763A JP S5470763 A JPS5470763 A JP S5470763A JP 13805777 A JP13805777 A JP 13805777A JP 13805777 A JP13805777 A JP 13805777A JP S5470763 A JPS5470763 A JP S5470763A
Authority
JP
Japan
Prior art keywords
diffusion
tube
gas
uniform
diffusion gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13805777A
Other languages
Japanese (ja)
Other versions
JPS5850412B2 (en
Inventor
Hiromi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13805777A priority Critical patent/JPS5850412B2/en
Publication of JPS5470763A publication Critical patent/JPS5470763A/en
Publication of JPS5850412B2 publication Critical patent/JPS5850412B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To perform the uniform diffusion via a large-diameter uniform-heat tube 1 by providing the gas jetting part at the temperature lowering part of tube 1 and then jetting the gas giving no effect to the diffusion to the wall inside the tube along the diffusion gas current.
CONSTITUTION: The diffusion gas is supplied through tube 2; N2 is jetted through tube 9; and the diffusion process is given to the semiconductor substrate within uniform-heat tube 1 through heating via heater 3. The diffusion gas at the temperature lowering part of tube 1 is jetted through mouth 8, and then regulated for its flowing direction by N2 flowing toward the side wall via guide substance 10. As a result, the diffusion gas under the high temperature state cannot rise up and is thus exhausted, and the diffusion gas features the uniform flow toward the axis of tube 1. Thus, the cold diffusion gas does not detour to the lower part, ensuring the uniform diffusion process.
COPYRIGHT: (C)1979,JPO&Japio
JP13805777A 1977-11-16 1977-11-16 Uniform diffusion method and device Expired JPS5850412B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13805777A JPS5850412B2 (en) 1977-11-16 1977-11-16 Uniform diffusion method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13805777A JPS5850412B2 (en) 1977-11-16 1977-11-16 Uniform diffusion method and device

Publications (2)

Publication Number Publication Date
JPS5470763A true JPS5470763A (en) 1979-06-06
JPS5850412B2 JPS5850412B2 (en) 1983-11-10

Family

ID=15212965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13805777A Expired JPS5850412B2 (en) 1977-11-16 1977-11-16 Uniform diffusion method and device

Country Status (1)

Country Link
JP (1) JPS5850412B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114171377A (en) * 2021-11-17 2022-03-11 深圳市拉普拉斯能源技术有限公司 Novel diffusion method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114171377A (en) * 2021-11-17 2022-03-11 深圳市拉普拉斯能源技术有限公司 Novel diffusion method

Also Published As

Publication number Publication date
JPS5850412B2 (en) 1983-11-10

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