JPS5482971A - Heat diffusion furnace of semiconductor producing device - Google Patents

Heat diffusion furnace of semiconductor producing device

Info

Publication number
JPS5482971A
JPS5482971A JP15084377A JP15084377A JPS5482971A JP S5482971 A JPS5482971 A JP S5482971A JP 15084377 A JP15084377 A JP 15084377A JP 15084377 A JP15084377 A JP 15084377A JP S5482971 A JPS5482971 A JP S5482971A
Authority
JP
Japan
Prior art keywords
heat diffusion
wafer
producing device
diffusion furnace
core tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15084377A
Other languages
Japanese (ja)
Inventor
Saburo Osaki
Yoichi Akasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15084377A priority Critical patent/JPS5482971A/en
Publication of JPS5482971A publication Critical patent/JPS5482971A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To secure the automatic heat diffusion by flowing the dopant gas or the like to the perpendicular direction to the axis from the middle part of the furnace core tube and shifting the wafer from one end of the furnace core tube to the other end.
CONSTITUTION: A tube is distributed at the upper and lower middle part of furnace core tube 1 to flow in (32) and out (33) dopant gas 31 or the like with formation of process part 14. Thus, the gas is supplied vertically to the furnace axis. Boat 4 holding wafer 5 is fed in (12) and out (13) via loader 7 which receives a high- speed control. In this way, the dust sticking and contamination can be prevented for the wafer.
COPYRIGHT: (C)1979,JPO&Japio
JP15084377A 1977-12-14 1977-12-14 Heat diffusion furnace of semiconductor producing device Pending JPS5482971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15084377A JPS5482971A (en) 1977-12-14 1977-12-14 Heat diffusion furnace of semiconductor producing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15084377A JPS5482971A (en) 1977-12-14 1977-12-14 Heat diffusion furnace of semiconductor producing device

Publications (1)

Publication Number Publication Date
JPS5482971A true JPS5482971A (en) 1979-07-02

Family

ID=15505581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15084377A Pending JPS5482971A (en) 1977-12-14 1977-12-14 Heat diffusion furnace of semiconductor producing device

Country Status (1)

Country Link
JP (1) JPS5482971A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027143A (en) * 1983-07-25 1985-02-12 Mitsubishi Electric Corp Device for continuous heat treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027143A (en) * 1983-07-25 1985-02-12 Mitsubishi Electric Corp Device for continuous heat treatment

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