JPS5753942A - Method of oxidation and diffusion - Google Patents

Method of oxidation and diffusion

Info

Publication number
JPS5753942A
JPS5753942A JP55128946A JP12894680A JPS5753942A JP S5753942 A JPS5753942 A JP S5753942A JP 55128946 A JP55128946 A JP 55128946A JP 12894680 A JP12894680 A JP 12894680A JP S5753942 A JPS5753942 A JP S5753942A
Authority
JP
Japan
Prior art keywords
wafers
reaction
specified
reacting
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55128946A
Other languages
Japanese (ja)
Other versions
JPS6366050B2 (en
Inventor
Junichi Nishizawa
Akira Ito
Tadahiro Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP55128946A priority Critical patent/JPS5753942A/en
Publication of JPS5753942A publication Critical patent/JPS5753942A/en
Publication of JPS6366050B2 publication Critical patent/JPS6366050B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

PURPOSE:To improve uniformity among wafers, by flowing inactive gas to the outlet and the inside of a reacting tube at the stage during which wafers are inserted and a specified temperature is attained, and at the stage during which the wafers are taken out after the specified reaction, and accurately regulating the speed of the reaction. CONSTITUTION:The vicinity of the outlet of the reacting tube 2 which is set in a heating furnace 1 is covered by a box shaped device 6. The wafers 4 on a boat 3 are inserted into and taken out of the reacting tube 1 by a loader 8. When they are inserted, inactive gas 7 such as purified Ar is flowed in the reacting tube 1 and the device 6. After the temperature of the wafers 4 which are inserted in a specified position of the tube has reached specified value, the flow of Ar is stopped, a specified reacting gas (O2 or impurity doped gas) 5 is flowed. After the reaction of the specified time, the reacting gas 5 is changed to the inactive gas 7, and the wafers 4 are slowly taken out. In this way, the contamination or the progress of reaction at the time of insertion and taking out can be prevented and the thinkness of the oxide film, the depth of the diffusion, and the like can be controlled, and the speed of the reaction can be accurately regulated.
JP55128946A 1980-09-17 1980-09-17 Method of oxidation and diffusion Granted JPS5753942A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55128946A JPS5753942A (en) 1980-09-17 1980-09-17 Method of oxidation and diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55128946A JPS5753942A (en) 1980-09-17 1980-09-17 Method of oxidation and diffusion

Publications (2)

Publication Number Publication Date
JPS5753942A true JPS5753942A (en) 1982-03-31
JPS6366050B2 JPS6366050B2 (en) 1988-12-19

Family

ID=14997309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55128946A Granted JPS5753942A (en) 1980-09-17 1980-09-17 Method of oxidation and diffusion

Country Status (1)

Country Link
JP (1) JPS5753942A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212944U (en) * 1985-07-09 1987-01-26

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51141581A (en) * 1975-06-02 1976-12-06 Hitachi Ltd Method for controlling crystal growth in the gaseous phase
JPS5298474A (en) * 1976-02-13 1977-08-18 Hitachi Ltd Vapor phase growth under reduced pressure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51141581A (en) * 1975-06-02 1976-12-06 Hitachi Ltd Method for controlling crystal growth in the gaseous phase
JPS5298474A (en) * 1976-02-13 1977-08-18 Hitachi Ltd Vapor phase growth under reduced pressure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6212944U (en) * 1985-07-09 1987-01-26

Also Published As

Publication number Publication date
JPS6366050B2 (en) 1988-12-19

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