JPS5691418A - Heat treatment device - Google Patents
Heat treatment deviceInfo
- Publication number
- JPS5691418A JPS5691418A JP16866879A JP16866879A JPS5691418A JP S5691418 A JPS5691418 A JP S5691418A JP 16866879 A JP16866879 A JP 16866879A JP 16866879 A JP16866879 A JP 16866879A JP S5691418 A JPS5691418 A JP S5691418A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- port
- wafers
- section
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title abstract 4
- 235000012431 wafers Nutrition 0.000 abstract 4
- 238000001816 cooling Methods 0.000 abstract 2
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To prevent oxidation or the like at the time of cooling after heat treatment by forming an extension section providing an inactive gas lead-in port at the opened end section opposing to the gas lead-in port at one end of a tubular reactor core tube. CONSTITUTION:An extension section 9 is formed at the opened end section opposing to a gas lead-in port 3 locating at one end of a tubular reactor core tube 2 and an inactive gas lead-in port 6 is provided at the extension section 9. Wafers 5 placed on a boat 4 are led out as far as the extension section 9 after applying heat treatment to the wafers 5 and the wafers 5 are cooled while feeding the inactive gas from the section 6 to prevent the flow of air. In this way, when applying heat treatment to the semiconductor wafers having Mo films on the surfaces, the oxidation of the Mo films and a change in the quality of the films by reacting to external air at the time of cooling will be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16866879A JPS5691418A (en) | 1979-12-25 | 1979-12-25 | Heat treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16866879A JPS5691418A (en) | 1979-12-25 | 1979-12-25 | Heat treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5691418A true JPS5691418A (en) | 1981-07-24 |
Family
ID=15872277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16866879A Pending JPS5691418A (en) | 1979-12-25 | 1979-12-25 | Heat treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5691418A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893230A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Ultra high vacuum processing apparatus |
| JPS64328U (en) * | 1987-06-22 | 1989-01-05 | ||
| JPS6421917A (en) * | 1987-07-16 | 1989-01-25 | Fujitsu Ltd | Heating furnace processing method |
-
1979
- 1979-12-25 JP JP16866879A patent/JPS5691418A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893230A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Ultra high vacuum processing apparatus |
| JPS64328U (en) * | 1987-06-22 | 1989-01-05 | ||
| JPS6421917A (en) * | 1987-07-16 | 1989-01-25 | Fujitsu Ltd | Heating furnace processing method |
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