JPS5644773A - Gas plasma processing apparatus of material to be etched - Google Patents

Gas plasma processing apparatus of material to be etched

Info

Publication number
JPS5644773A
JPS5644773A JP11951979A JP11951979A JPS5644773A JP S5644773 A JPS5644773 A JP S5644773A JP 11951979 A JP11951979 A JP 11951979A JP 11951979 A JP11951979 A JP 11951979A JP S5644773 A JPS5644773 A JP S5644773A
Authority
JP
Japan
Prior art keywords
etched
gas plasma
processing apparatus
plasma processing
stand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11951979A
Other languages
Japanese (ja)
Inventor
Teruhiko Yamazaki
Haruyuki Hoshika
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11951979A priority Critical patent/JPS5644773A/en
Publication of JPS5644773A publication Critical patent/JPS5644773A/en
Pending legal-status Critical Current

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  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To form the minute pattern film with high accuracy, by providing cooling mechanism of material to be etched in the gas plasma processing apparatus.
CONSTITUTION: Thermal decomposition or softening of photoresist film due to temperature rise of material to be etched, is prevented. For example, about 10°C cooling water is flowed in the sample stand 7 at about 5l/min. flowing rate so as to cool the stand 7 in the gas plasma reaction tube 1. The material to be etched 5 is placed on the stand 7 and is cooled. Then, said material 5 is etched by the gas plasma and temperature rise of the material 5 during the gas plasma treatment is controlled. Hereby, minute pattern having a high accuracy is obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP11951979A 1979-09-17 1979-09-17 Gas plasma processing apparatus of material to be etched Pending JPS5644773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11951979A JPS5644773A (en) 1979-09-17 1979-09-17 Gas plasma processing apparatus of material to be etched

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11951979A JPS5644773A (en) 1979-09-17 1979-09-17 Gas plasma processing apparatus of material to be etched

Publications (1)

Publication Number Publication Date
JPS5644773A true JPS5644773A (en) 1981-04-24

Family

ID=14763274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11951979A Pending JPS5644773A (en) 1979-09-17 1979-09-17 Gas plasma processing apparatus of material to be etched

Country Status (1)

Country Link
JP (1) JPS5644773A (en)

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