JPS5732378A - Plasma etching apparatus - Google Patents
Plasma etching apparatusInfo
- Publication number
- JPS5732378A JPS5732378A JP10752580A JP10752580A JPS5732378A JP S5732378 A JPS5732378 A JP S5732378A JP 10752580 A JP10752580 A JP 10752580A JP 10752580 A JP10752580 A JP 10752580A JP S5732378 A JPS5732378 A JP S5732378A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- products
- opposite
- region
- rise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To inhibit a surface temp. rise of products to be worked due to heat of reaction and to prevent the deformation and deterioration of a resist by cooling the products when they are present in the open region of a sample electrode set opposite to a high frequency electrode.
CONSTITUTION: To restrict the generation region of gas plasma 7 a high frequency electrode 24 in a reactor 1 is regulated in size so that it is opposite to about half of a sample electrode 25. Accordingly, products 8 to be worked present in the region of the electrode 25 opposite to the electrode 24 are etched, and products 8 to be worked present in the other region not opposite to the electrode 24 are not exposed to gas plasma 7. Since the electrode 25 is rotated with a rotating mechanism 9, the products 8 are alternately subjected to the progress and stop of etching. As a result, a surface temp. rise of the products 8 during etching and the thermal deformation and deterioration of a resist due to the temp. rise can be inhibited, so micropattern can be formed without causing deformation.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10752580A JPS5732378A (en) | 1980-08-05 | 1980-08-05 | Plasma etching apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10752580A JPS5732378A (en) | 1980-08-05 | 1980-08-05 | Plasma etching apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5732378A true JPS5732378A (en) | 1982-02-22 |
Family
ID=14461395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10752580A Pending JPS5732378A (en) | 1980-08-05 | 1980-08-05 | Plasma etching apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5732378A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01110561U (en) * | 1988-01-19 | 1989-07-26 | ||
US5347370A (en) * | 1992-12-28 | 1994-09-13 | Nisca Corporation | Shading correction method and apparatus |
JP2005533391A (en) * | 2002-07-18 | 2005-11-04 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | Plasma injection system and method with target movement |
JP2011099650A (en) * | 2009-11-09 | 2011-05-19 | Mitsubishi Electric Corp | Refrigerator |
-
1980
- 1980-08-05 JP JP10752580A patent/JPS5732378A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01110561U (en) * | 1988-01-19 | 1989-07-26 | ||
US5347370A (en) * | 1992-12-28 | 1994-09-13 | Nisca Corporation | Shading correction method and apparatus |
JP2005533391A (en) * | 2002-07-18 | 2005-11-04 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | Plasma injection system and method with target movement |
JP2011099650A (en) * | 2009-11-09 | 2011-05-19 | Mitsubishi Electric Corp | Refrigerator |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5732378A (en) | Plasma etching apparatus | |
JPS53112065A (en) | Removing method of high molecular compound | |
JPS56123377A (en) | Plasma cleaning and etching method | |
JPS5483971A (en) | Crosslinked olefinic resin film having improved heat sealability | |
JPS52127496A (en) | Removal of trace amounts of halogen in sulfuric acid | |
JPS5477573A (en) | Operating method of plasma treating apparatus | |
JPS5344413A (en) | Method and apparatus for producing metallic magnesium | |
GB1512856A (en) | Plasma etching device and process | |
JPS542670A (en) | Plasma etching method | |
JPS52155969A (en) | Reduced pressure heat treatment furnace of semiconductor wafers | |
JPS52139373A (en) | Treating method for compound semiconductor | |
JPS5421278A (en) | Plasma etching method | |
JPS5633477A (en) | Plasma etching method | |
JPS55164077A (en) | Method for etching by gas plasma | |
JPS5276761A (en) | Manufacturing method of heat pipe | |
JPS55154583A (en) | Etching processing apparatus | |
JPS5342477A (en) | Process for treating electrode component of bulb | |
JPS5477574A (en) | Plasma treating apparatus | |
JPS53123081A (en) | Semiconductor wafer heat treatment apparatus | |
JPS5262193A (en) | Process for production of hydrogen | |
JPS54101273A (en) | Manufacture for semiconductor device | |
JPS5224159A (en) | Apparatus for removal of sodium aerosols | |
JPS5425665A (en) | Reactor core tube | |
JPS5651582A (en) | Gas etching method | |
JPS5411996A (en) | Batch-wise polycondensation reactor |