JPS5571618A - Oxide film forming device - Google Patents
Oxide film forming deviceInfo
- Publication number
- JPS5571618A JPS5571618A JP14445178A JP14445178A JPS5571618A JP S5571618 A JPS5571618 A JP S5571618A JP 14445178 A JP14445178 A JP 14445178A JP 14445178 A JP14445178 A JP 14445178A JP S5571618 A JPS5571618 A JP S5571618A
- Authority
- JP
- Japan
- Prior art keywords
- monosilane
- introducing
- inert gas
- valve
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent penetration of air and formation of foreign matter by setting an inert gas introducing pass system between the monosilane introducing valve and the supply inlet of the reaction chamber of a device for forming a silicon dioxide film on a silicon wafer by reacting monosilane and oxygen.
CONSTITUTION: While feeding inert gas 2 such as nitrogen into reaction chamber 1, monosilane 3 and oxygen 4 are supplied from independent introduction pipes 3, 4 to from silicon dioxide, thereby vapor-phase-growing an oxide film on a silicon wafer. Introduction pipe 10 and on-off valve 11 for introducing an inert gas such as nitrogen are set between on-off valve 5 of pipe 3 for introducing monosilane into chamber 1 and supply inlet 8a of chamber 1. When monosilane introducing valve 5 is closed, an inert gas is introduced from pipe 10 to prevent penetration of air into tube 3. Thus, formation of SiO2 before chamber 1 is prevented, resulting in no contamination of the wafer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14445178A JPS5571618A (en) | 1978-11-20 | 1978-11-20 | Oxide film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14445178A JPS5571618A (en) | 1978-11-20 | 1978-11-20 | Oxide film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5571618A true JPS5571618A (en) | 1980-05-29 |
Family
ID=15362535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14445178A Pending JPS5571618A (en) | 1978-11-20 | 1978-11-20 | Oxide film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5571618A (en) |
-
1978
- 1978-11-20 JP JP14445178A patent/JPS5571618A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5242075A (en) | Device for controlling gas atmosphere in semiconductor producing equip ment | |
| JPS5694751A (en) | Vapor growth method | |
| JPS5571618A (en) | Oxide film forming device | |
| JPS521320A (en) | Secondary air supplying apparatus | |
| JPS5220388A (en) | Furnace system for chemical reaction | |
| JPS56161832A (en) | Gaseous phase treatment device | |
| JPS561527A (en) | Exhaust gas disposal method for semiconductor manufacturing equipment | |
| JPS56169776A (en) | Selective dry etching method | |
| EP0167374A3 (en) | Chemical vapor deposition wafer boat | |
| JPS5713746A (en) | Vapor-phase growing apparatus | |
| JPS57175797A (en) | Epitaxial growth under reduced pressure | |
| JPS52155969A (en) | Reduced pressure heat treatment furnace of semiconductor wafers | |
| JPS52110273A (en) | Method and apparatus for exhausting hydrogen | |
| JPS54125972A (en) | Film forming device | |
| JPS6430234A (en) | Apparatus for manufacturing semiconductor device | |
| JPS5591815A (en) | Silicon epitaxial growth | |
| JPS54146957A (en) | Doping gas cntrol method in semiconductor process | |
| JPS54161601A (en) | Operation of denitrification process of coke oven exhaust gas | |
| JPS57129818A (en) | Formation of silicon dioxide film | |
| JPS5255864A (en) | Dry etching device | |
| JPS5518077A (en) | Device for growing film under gas | |
| JPS60227415A (en) | Vapor growth apparatus | |
| JPS5376104A (en) | Blowing-in method for n2 gas into blast furnace | |
| JPS56112406A (en) | Method for blowing-out operation of blast furnace | |
| JPS5796534A (en) | Cvd device |