JPS57175797A - Epitaxial growth under reduced pressure - Google Patents

Epitaxial growth under reduced pressure

Info

Publication number
JPS57175797A
JPS57175797A JP5985481A JP5985481A JPS57175797A JP S57175797 A JPS57175797 A JP S57175797A JP 5985481 A JP5985481 A JP 5985481A JP 5985481 A JP5985481 A JP 5985481A JP S57175797 A JPS57175797 A JP S57175797A
Authority
JP
Japan
Prior art keywords
tube
fed
reactor tube
nozzle
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5985481A
Other languages
Japanese (ja)
Inventor
Ryokichi Takahashi
Masatoshi Matsuda
Masahiko Kogirima
Hiroo Tochikubo
Akira Kanai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5985481A priority Critical patent/JPS57175797A/en
Publication of JPS57175797A publication Critical patent/JPS57175797A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: The source gas is fed from the nozzle jutting out from the upper part of the reactor tube to effect the growth of a film, then hydrogen chloride is fed into the tube, after the reaction, to prevent the contamination in the tube and deterioration of the tube material.
CONSTITUTION: The jig 3 carrying the silicon base plate 4 is inserted into the reactor tube 2 set in the furnace and the tube is heated up to about 1,000°C. The reaction gases, SiH2Cl2 and H2 are fed through the nozzle 5 into the reactor tube 2 and the jetting end of the nozzle 5 is kept at over 800°C. Meanwhile the carrier gas, H2, and the doping gas, PH2, are fed from the branch of the end of the reactor tube 2. Thus, an epitaxial film is formed on the surface of the silicon base plate 4. After reaction, the gases are excluded and the jig is taken out. The inside of the reactor tube is made vacuum and hydrogen chloride is directly fed into the tube 2 to keep the pressure at about 5 Torr for about 10min, whereby the wall of the reactor tube is almost cleaned to become clear.
COPYRIGHT: (C)1982,JPO&Japio
JP5985481A 1981-04-22 1981-04-22 Epitaxial growth under reduced pressure Pending JPS57175797A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5985481A JPS57175797A (en) 1981-04-22 1981-04-22 Epitaxial growth under reduced pressure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5985481A JPS57175797A (en) 1981-04-22 1981-04-22 Epitaxial growth under reduced pressure

Publications (1)

Publication Number Publication Date
JPS57175797A true JPS57175797A (en) 1982-10-28

Family

ID=13125187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5985481A Pending JPS57175797A (en) 1981-04-22 1981-04-22 Epitaxial growth under reduced pressure

Country Status (1)

Country Link
JP (1) JPS57175797A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122493A (en) * 1993-10-26 1995-05-12 Iwatani Internatl Corp Gas cleaning method of epitaxial growth furnace
US5855678A (en) * 1997-04-30 1999-01-05 Sri International Fluidized bed reactor to deposit a material on a surface by chemical vapor deposition, and methods of forming a coated substrate therewith
JP2004289098A (en) * 2003-03-24 2004-10-14 Iwatani Internatl Corp Cleaning method for epitaxial growth furnace

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07122493A (en) * 1993-10-26 1995-05-12 Iwatani Internatl Corp Gas cleaning method of epitaxial growth furnace
US5855678A (en) * 1997-04-30 1999-01-05 Sri International Fluidized bed reactor to deposit a material on a surface by chemical vapor deposition, and methods of forming a coated substrate therewith
JP2004289098A (en) * 2003-03-24 2004-10-14 Iwatani Internatl Corp Cleaning method for epitaxial growth furnace

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