JPS6425518A - Method for forming amorphous silicon film - Google Patents
Method for forming amorphous silicon filmInfo
- Publication number
- JPS6425518A JPS6425518A JP18122387A JP18122387A JPS6425518A JP S6425518 A JPS6425518 A JP S6425518A JP 18122387 A JP18122387 A JP 18122387A JP 18122387 A JP18122387 A JP 18122387A JP S6425518 A JPS6425518 A JP S6425518A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- hydrogen
- film
- disilane
- thermal cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To make it possible to form a film at a low temperature and to improve light sensitivity expressed by photoelectric conductivity/dark-current conductivity, by depositing an a-Si film on a substrate by a thermal CVD method by using disilane gas, and performing hydrogen plasma treatment. CONSTITUTION:Disilane gas as a raw material passes through a disilane gas flowmeter 5. The gas is mixed with diluting gas, which passes through a flowmeter 6 at a specified diluting rate. The gas is introduced into a reaction tube 1. The gas, which is used for reaction is exhausted through an exhaust system 8. Hydrogen plasma is generated from hydrogen gas, which passes through a hydrogen gas flowmeter 7, in a high frequency generator 9. After a substrate stage 2 is heated to a specified temperature, the disilane and the diluting gas are introduced into the reacting tube 1 at specified flow rates at the same time. Thermal CVD is performed, and an a-Si film is deposited on a substrate 4. Thereafter plasma treatment is carried out as follows: the inside of the reaction tube is substituted with the hydrogen; the temperature is set at 100-500 deg.C; and the hydrogen plasma is yielded with the high frequency generator 9. Thus, a film is formed at a temperature lower than that in a thermal CVD method using monosilane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18122387A JPS6425518A (en) | 1987-07-22 | 1987-07-22 | Method for forming amorphous silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18122387A JPS6425518A (en) | 1987-07-22 | 1987-07-22 | Method for forming amorphous silicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6425518A true JPS6425518A (en) | 1989-01-27 |
Family
ID=16096965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18122387A Pending JPS6425518A (en) | 1987-07-22 | 1987-07-22 | Method for forming amorphous silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6425518A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0541135U (en) * | 1991-11-01 | 1993-06-01 | 三洋電機株式会社 | Semiconductor thin film forming equipment |
| JPH0541136U (en) * | 1991-11-06 | 1993-06-01 | 三洋電機株式会社 | Semiconductor thin film forming equipment |
| JPH06268240A (en) * | 1993-03-10 | 1994-09-22 | Hitachi Ltd | Thin-film solar cell and manufacture thereof |
-
1987
- 1987-07-22 JP JP18122387A patent/JPS6425518A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0541135U (en) * | 1991-11-01 | 1993-06-01 | 三洋電機株式会社 | Semiconductor thin film forming equipment |
| JPH0541136U (en) * | 1991-11-06 | 1993-06-01 | 三洋電機株式会社 | Semiconductor thin film forming equipment |
| JPH06268240A (en) * | 1993-03-10 | 1994-09-22 | Hitachi Ltd | Thin-film solar cell and manufacture thereof |
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