JPS553378A - Production of silicon film - Google Patents

Production of silicon film

Info

Publication number
JPS553378A
JPS553378A JP5390479A JP5390479A JPS553378A JP S553378 A JPS553378 A JP S553378A JP 5390479 A JP5390479 A JP 5390479A JP 5390479 A JP5390479 A JP 5390479A JP S553378 A JPS553378 A JP S553378A
Authority
JP
Japan
Prior art keywords
gas
vacuum
silane gas
plasma
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5390479A
Other languages
Japanese (ja)
Other versions
JPS5647692B2 (en
Inventor
Haruhiko Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5390479A priority Critical patent/JPS553378A/en
Publication of JPS553378A publication Critical patent/JPS553378A/en
Publication of JPS5647692B2 publication Critical patent/JPS5647692B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To obtain a vacuum deposited film such as a high quality polycrystalline silicon film by reacting silane gas or a mixed gas of silane gas and NH3 gas or CO2 with plasma on semiconductor substrates set in a quartz reaction tube in a high vacuum. CONSTITUTION:The apparatus of this invention consists of gas introducing part 1, plasma generating part 2 and vacuum exhausting part 3. Part 1 is detached, silicon substrates 12 are set on graphite plate 13, and part 1 is returned to the original place. Vacuum exhaust pump system 22 is actuated to evacuate quartz reaction tube 10 to below 10<-6> Torr, and cock 5 is opened to introduce silane gas or a mixed gas of silane gas and NH3 gas or CO2 into tube 10. A voltage of about 1kw is applied to plasma generating high frequency electrodes 11 to generate plasma for a fixed time. By supplying a current to heater 15 the temp. of substrates 12 is regulated. Thus, a vacuum deposited uniform SiO2 film contg. no impurities is obtd. at such a low temp. as about 300 deg.C.
JP5390479A 1979-04-27 1979-04-27 Production of silicon film Granted JPS553378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5390479A JPS553378A (en) 1979-04-27 1979-04-27 Production of silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5390479A JPS553378A (en) 1979-04-27 1979-04-27 Production of silicon film

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9630373A Division JPS5329476B2 (en) 1973-08-28 1973-08-28

Publications (2)

Publication Number Publication Date
JPS553378A true JPS553378A (en) 1980-01-11
JPS5647692B2 JPS5647692B2 (en) 1981-11-11

Family

ID=12955696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5390479A Granted JPS553378A (en) 1979-04-27 1979-04-27 Production of silicon film

Country Status (1)

Country Link
JP (1) JPS553378A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60163991U (en) * 1984-04-10 1985-10-31 岡村　誠一 color matching puzzle

Also Published As

Publication number Publication date
JPS5647692B2 (en) 1981-11-11

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