JPS54125975A - Anti-contamination method for wafer inside reaction tube - Google Patents

Anti-contamination method for wafer inside reaction tube

Info

Publication number
JPS54125975A
JPS54125975A JP3307378A JP3307378A JPS54125975A JP S54125975 A JPS54125975 A JP S54125975A JP 3307378 A JP3307378 A JP 3307378A JP 3307378 A JP3307378 A JP 3307378A JP S54125975 A JPS54125975 A JP S54125975A
Authority
JP
Japan
Prior art keywords
wafer
acceptor
stage
tube
tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3307378A
Other languages
Japanese (ja)
Inventor
Hideo Sakai
Takeo Yoshimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3307378A priority Critical patent/JPS54125975A/en
Publication of JPS54125975A publication Critical patent/JPS54125975A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically

Abstract

PURPOSE:To reduce the sliding area of the wafer to the reaction tube wall and thus to prevent contamination of the wafer by providing the stage featuring an extremely reduced contact area to the wafer tool at the area where the wafer tool is placed inside the reaction tube and then placing the wafer tool on the stage to carry out the surface treatment of the wafer. CONSTITUTION:Stage 2 formed with the quartz bar featuring a triangular cross- section is fixed to at least more than one fixed areas within reaction tube 1, and then wafer tool holding wafer 3 is put on flat-plane type acceptor 5 to be inserted up to the front of stage 2 avoiding a contact to the inner wall of tube 1. Then tool 4 is shifted from acceptor 5 onto stage 2 by means of bar 6 containing a hook at the tip, and then acceptor 5 is drawn out of tube 1 to perform the necessary surface treatment. After the surface treatment, acceptor 5 is inserted again into tube 1, and tool 4 on stage 2 is transferred to acceptor 5 again via bar 6 to then draw out acceptor 5 of tube 1. As a reslut, the sticking of the foreign matters attached on the tube wall can be reduced extremely onto the wafer.
JP3307378A 1978-03-24 1978-03-24 Anti-contamination method for wafer inside reaction tube Pending JPS54125975A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3307378A JPS54125975A (en) 1978-03-24 1978-03-24 Anti-contamination method for wafer inside reaction tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3307378A JPS54125975A (en) 1978-03-24 1978-03-24 Anti-contamination method for wafer inside reaction tube

Publications (1)

Publication Number Publication Date
JPS54125975A true JPS54125975A (en) 1979-09-29

Family

ID=12376537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3307378A Pending JPS54125975A (en) 1978-03-24 1978-03-24 Anti-contamination method for wafer inside reaction tube

Country Status (1)

Country Link
JP (1) JPS54125975A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4355974A (en) * 1980-11-24 1982-10-26 Asq Boats, Inc. Wafer boat
US5582649A (en) * 1996-02-29 1996-12-10 The United States Of America As Represented By The Secretary Of The Air Force Wafer transfer apparatus for use in a film deposition furnace
US5759273A (en) * 1996-07-16 1998-06-02 Micron Technology, Inc. Cross-section sample staining tool

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4355974A (en) * 1980-11-24 1982-10-26 Asq Boats, Inc. Wafer boat
US5582649A (en) * 1996-02-29 1996-12-10 The United States Of America As Represented By The Secretary Of The Air Force Wafer transfer apparatus for use in a film deposition furnace
US5759273A (en) * 1996-07-16 1998-06-02 Micron Technology, Inc. Cross-section sample staining tool
US5906681A (en) * 1996-07-16 1999-05-25 Micron Technology, Inc. Cross-section sample staining tool
US6106621A (en) * 1996-07-16 2000-08-22 Micron Technology, Inc. Cross-section sample staining tool
US6139915A (en) * 1996-07-16 2000-10-31 Micron Technology, Inc. Cross-section sample staining method
US6183813B1 (en) 1996-07-16 2001-02-06 Micron Technology, Inc. Method of staining a semiconductor wafer with a semiconductor treatment chemical
US6475567B2 (en) 1996-07-16 2002-11-05 Micron Technology, Inc. Method of staining semiconductor wafer samples with a semiconductor treatment chemical

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