JPS647517A - Heat treatment device for semiconductor substrate - Google Patents

Heat treatment device for semiconductor substrate

Info

Publication number
JPS647517A
JPS647517A JP16374087A JP16374087A JPS647517A JP S647517 A JPS647517 A JP S647517A JP 16374087 A JP16374087 A JP 16374087A JP 16374087 A JP16374087 A JP 16374087A JP S647517 A JPS647517 A JP S647517A
Authority
JP
Japan
Prior art keywords
inner cylinder
reaction tube
semiconductor substrate
tube
outside air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16374087A
Other languages
Japanese (ja)
Inventor
Arata Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP16374087A priority Critical patent/JPS647517A/en
Publication of JPS647517A publication Critical patent/JPS647517A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To exclude the influence of fine particles and the outside air by a method wherein an inner cylinder reaction tube, which can be put in and taken out, is provided in the reaction tube of the heat treatment device of a semiconductor substrate. CONSTITUTION:An inner cylinder reaction tube 3, which can be moved vertically along the inner wall surface of the reaction tube 2 by an inner cylinder elevating device, is provided in the reaction tube 2 which is fixed to a furnace body. The inner cylinder reaction tube 3 is lowered using an inner cylinder elevating device so that half the length of the inner cylinder reaction tube 3 comes out from the reaction tube 2, and the inner cylinder tube 3 is filled up with reaction gas 8 in the above-mentioned state. Then, the jig 6 supporting a semiconductor substrate 5 is inserted into the furnace body 1 passing through the inner cylinder reaction tube 3 using a jig elevating device 10. At this time, the semiconductor substrate 5 is not exposed to the outside air by unchanging the position of the inner cylinder tube 3. Also, the high temperature semiconductor substrate 5 can be taken out without exposing to the outside air by passing it in the inner cylinder tube 3 when the semiconductor substrate 5 is taken out from the furnace body 1.
JP16374087A 1987-06-29 1987-06-29 Heat treatment device for semiconductor substrate Pending JPS647517A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16374087A JPS647517A (en) 1987-06-29 1987-06-29 Heat treatment device for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16374087A JPS647517A (en) 1987-06-29 1987-06-29 Heat treatment device for semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS647517A true JPS647517A (en) 1989-01-11

Family

ID=15779776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16374087A Pending JPS647517A (en) 1987-06-29 1987-06-29 Heat treatment device for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS647517A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01194415A (en) * 1988-01-29 1989-08-04 Kokusai Electric Co Ltd Furnace port in vertical furnace
WO1994011898A1 (en) * 1992-11-13 1994-05-26 Asm Japan K.K. Load lock chamber for vertical type heat treatment apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6120318A (en) * 1984-07-06 1986-01-29 Toshiba Corp Vertical diffusion furnace
JPS62128524A (en) * 1985-11-29 1987-06-10 Deisuko Saiyaa Japan:Kk Vertical type semiconductor thermal treatment equipment with reaction tube having multiple structure
JPS62140413A (en) * 1985-12-16 1987-06-24 Nec Corp Vertical type diffusion equipment

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6120318A (en) * 1984-07-06 1986-01-29 Toshiba Corp Vertical diffusion furnace
JPS62128524A (en) * 1985-11-29 1987-06-10 Deisuko Saiyaa Japan:Kk Vertical type semiconductor thermal treatment equipment with reaction tube having multiple structure
JPS62140413A (en) * 1985-12-16 1987-06-24 Nec Corp Vertical type diffusion equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01194415A (en) * 1988-01-29 1989-08-04 Kokusai Electric Co Ltd Furnace port in vertical furnace
WO1994011898A1 (en) * 1992-11-13 1994-05-26 Asm Japan K.K. Load lock chamber for vertical type heat treatment apparatus
US5571330A (en) * 1992-11-13 1996-11-05 Asm Japan K.K. Load lock chamber for vertical type heat treatment apparatus

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