JPH01194415A - Furnace port in vertical furnace - Google Patents
Furnace port in vertical furnaceInfo
- Publication number
- JPH01194415A JPH01194415A JP2083088A JP2083088A JPH01194415A JP H01194415 A JPH01194415 A JP H01194415A JP 2083088 A JP2083088 A JP 2083088A JP 2083088 A JP2083088 A JP 2083088A JP H01194415 A JPH01194415 A JP H01194415A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- boat
- tube
- reaction tube
- cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 239000012495 reaction gas Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 abstract 2
- 230000009545 invasion Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 19
- 239000000428 dust Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は加熱用の管状炉（ヒータ）を垂直に置いて使用
する縦形炉、例えば半導体デバイス製造に使用する縦形
拡散、ＣＶＤ装置などの縦形炉に係り、特に、縦形炉の
中へ処理物（ウェーハ）を出し入れする炉口部に関する
。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a vertical furnace in which a heating tube furnace (heater) is placed vertically, such as a vertical diffusion furnace used in the manufacture of semiconductor devices, a vertical furnace such as a CVD apparatus, etc. The present invention relates to a furnace, and particularly relates to a furnace opening for loading and unloading a workpiece (wafer) into and out of a vertical furnace.
従来、半導体デバイスの製造に使用する拡散。 Diffusion traditionally used in the manufacture of semiconductor devices.
ＣＶＤ装置は、Ｆｅ 、 Ｃｒ 、 Ａ ｌ系の丸線
を螺旋状に巻いた抵抗加熱による管状炉を水平（横形）
に配置し、この管状炉内に石英、セラミック類等の反応
管を挿入し、ウェーハを反応管内にて処理する装置であ
る。The CVD equipment uses a resistance heating tubular furnace made of spirally wound round wires made of Fe, Cr, and Al.
A reaction tube made of quartz, ceramic, etc. is inserted into this tubular furnace, and wafers are processed in the reaction tube.
また縦形炉においては、第４図示のように加熱用の管状
炉（ヒータ）ｌを垂直に配置し、この管状炉１内に石英
、セラミック類等の外側、内側の反応管２．３を挿設し
、この両反応管２．３間を真空排気口９より排気させ、
反応管３内への空気の混入や塵埃の侵入を減少させるた
めに、ウェーハ５の挿入口（炉口）１６を下向きにし、
多数のウェーハ５を充填した石英、セラミック類等のボ
ート４をキャップ６にのせ、またそれらを上下移動機構
７にのせて、内側反応管３内に搬入すると共に反応ガス
を反応ガス導入口８ａより導入することにより管状炉１
により加熱されたボート４上のつ工−ハ５表面に生成膜
を生成し、しかる後、上下移動機構７により生成膜を生
成した多数のウェーハ５を充填したボート４を炉口１６
より搬出するものである。In a vertical furnace, a heating tube furnace (heater) 1 is arranged vertically as shown in Figure 4, and outer and inner reaction tubes 2.3 made of quartz, ceramics, etc. are inserted into this tube furnace 1. The space between both reaction tubes 2.3 is evacuated from the vacuum exhaust port 9,
In order to reduce the intrusion of air and dust into the reaction tube 3, the insertion port (furnace port) 16 for the wafer 5 is directed downward.
A boat 4 made of quartz, ceramic, etc. filled with a large number of wafers 5 is placed on a cap 6, and is placed on a vertical movement mechanism 7 to be carried into the inner reaction tube 3 and reactant gas is introduced from the reaction gas inlet 8a. By introducing the tube furnace 1
A produced film is generated on the surface of the boat 4 and the wafer 5 heated by the boat 4, and then the boat 4 filled with a large number of wafers 5 on which the produced film has been produced is moved by the vertical movement mechanism 7 to the furnace port 16.
It will be carried out further.
このような縦形炉において処理されたウェーハ５上の生
成膜は、横形炉のものより空気の混入や塵埃の侵入を防
ぐことができることや、反応ガスの導入のしかたによっ
て均一になる。The film formed on the wafer 5 processed in such a vertical furnace is more uniform than that in a horizontal furnace because it is able to prevent the intrusion of air and dust, and because of the method of introducing the reaction gas.
１０．１１はそれぞれ外側の反応管２と炉口フランジ１
４との間及び炉口フランジ１４とシールキャップ１３と
の間をシールする０リング、１２はヒータヘースである
。10.11 are the outer reaction tube 2 and the furnace mouth flange 1, respectively.
4 and between the furnace mouth flange 14 and the seal cap 13, and 12 is a heater head.
しかしながら、上記従来の縦形炉にあっては、第５図示
のように内側の反応管３の下端開口（炉口）１６からボ
ート４を搬入、搬出する過程で炉口１６から鎖線で示す
如く熱対流、ボート４の搬入時の乱流及びボート４の搬
出時の炉圧力と外気圧との差圧による空気の引き込みな
どにより内側の反応管３内への空気の混入や塵埃の侵入
１５が起こるため、ボート４に充填された多数のウェー
ハ５上に異物を生成するという課題があった。However, in the above-mentioned conventional vertical furnace, as shown in FIG. Air is mixed into the inner reaction tube 3 and dust enters 15 due to convection, turbulence when the boat 4 is brought in, and air drawn in due to the differential pressure between the furnace pressure and the outside pressure when the boat 4 is taken out. Therefore, there was a problem in that foreign matter was generated on the large number of wafers 5 filled in the boat 4.
本発明炉口部は上記の課題を解決するため、第１図示の
ように加熱用の管状炉１を垂直に設置し、この管状炉１
内に反応管３を挿設し、この反応管３内にウェーハ５を
載置したボート４を搬入すると共に反応ガスを反応ガス
導入口８ａより導入することによりウェーハ５の表面に
生成膜を生成する縦形炉において、反応管３とボート４
を支持するキャップ６との間に、上下移動機構７によっ
て上下動せしめられる筒状のインナーリング１７を挿設
し、このインナーリング１７の上部には炉口フランジ１
４に係止される突起部１８を設けてなる構成としたもの
である。In order to solve the above problems, the furnace mouth part of the present invention has a heating tube furnace 1 installed vertically as shown in the first figure.
A reaction tube 3 is inserted into the reaction tube 3, and a boat 4 with a wafer 5 placed therein is carried into the reaction tube 3, and a reaction gas is introduced from the reaction gas inlet 8a to form a product film on the surface of the wafer 5. In a vertical furnace, reaction tube 3 and boat 4
A cylindrical inner ring 17 that can be moved up and down by a vertical movement mechanism 7 is inserted between the cap 6 that supports the furnace opening flange 1
4 is provided with a protrusion 18 that is engaged with the protrusion 18.
このように構成したので、ボート４の搬入、搬出時の熱
対流、ボート４の搬入時の乱流、ボート４の搬出時の炉
圧力と外気圧との差圧による空気の引き込みなどによる
、反応管３内への空気の混入や塵埃の侵入をインナーリ
ング１７によって減少させることができる。With this configuration, reactions are prevented due to thermal convection when the boat 4 is carried in and taken out, turbulence when the boat 4 is carried in, air drawn in due to the differential pressure between the furnace pressure and the outside pressure when the boat 4 is carried out, etc. The inner ring 17 can reduce the intrusion of air and dust into the tube 3.
以下図面に基いて本発明の詳細な説明する。 The present invention will be described in detail below based on the drawings.
第１図は本発明炉口部の一実施例を適用した縦形炉の簡
略断面図、第２図は同じく下降または上昇途中の状態を
示す簡略断面図である。FIG. 1 is a simplified cross-sectional view of a vertical furnace to which an embodiment of the furnace mouth part of the present invention is applied, and FIG. 2 is a simplified cross-sectional view showing a state in the middle of descending or rising.
第１．第２図中１は加熱用の管状炉（ヒータ）、１２は
ヒータヘース、２，３はそれぞれこの管状炉１内に挿設
された外側、内側の反応管（アウタチューブ、インナー
チューブ）、９はこれらの反応管２．３間の空間部を排
気するための真空排気口である。内側の反応管３内には
多数のウェーハ５を載置したボート４が炉口１６より搬
入量される。1st. In Fig. 2, 1 is a heating tubular furnace (heater), 12 is a heater head, 2 and 3 are outer and inner reaction tubes (outer tube, inner tube) respectively inserted into this tubular furnace 1, and 9 is a heating tube. This is a vacuum exhaust port for evacuating the space between these reaction tubes 2.3. A boat 4 carrying a large number of wafers 5 is carried into the inner reaction tube 3 through the furnace port 16 .
７はその搬入量を行う上下移動機構、１４は炉口フラン
ジ、１０．１１はそれぞれ外側の反応管２と炉口フラン
ジ１４との間及び炉口フランジ１４とシールキャップ１
３との間をシールする０リングである。Reference numeral 7 denotes a vertical movement mechanism for carrying in the amount, 14 a furnace mouth flange, and 10.11 a space between the outer reaction tube 2 and the furnace mouth flange 14, and a space between the furnace mouth flange 14 and the seal cap 1, respectively.
This is an O-ring that seals between 3 and 3.
内側の反応管３とボート４を支持するキャップ６との間
には、上下移動機構７によって上下動せしめられる筒状
のインナーリング１７が挿設され、このインナーリング
１７の上部には炉口フランジ１４の係止部１４ａに係止
される突起部１８が設けられている（第３図参照）。イ
ンナーリング１７は石英またはセラミック製で、管状炉
１の高温に耐える構造となっている。１９は突起部１８
の間に形成された反応ガスノズル８の逃げ部である。A cylindrical inner ring 17 that is moved up and down by a vertical movement mechanism 7 is inserted between the inner reaction tube 3 and the cap 6 that supports the boat 4, and a furnace opening flange is attached to the upper part of the inner ring 17. A protrusion 18 is provided which is engaged with the engagement section 14a of 14 (see FIG. 3). The inner ring 17 is made of quartz or ceramic and has a structure that can withstand the high temperature of the tube furnace 1. 19 is a protrusion 18
This is the escape part of the reaction gas nozzle 8 formed during this period.
上記の構成において上下移動機構７によりキャップ６上
のボート４及びインナーリング１７を上動させ、炉口フ
ランジ１４にシールキャップ１３を対接させた第１図示
の状態、即ちボート４を内側の反応管３内に搬入した状
態にする。この状態で真空排気口９より外側、内側の反
応管２，３間の空間部を真空排気し、反応ガスを反応ガ
ス導入口８ａより導入し、反応ガスノズル８より吐出さ
せると共に、ボート４上に載置した多数のウェーハ５を
加熱用の管状炉１により加熱することにより各つ工−ハ
５の表面に生成膜が生成される。In the above configuration, the boat 4 and the inner ring 17 on the cap 6 are moved upward by the vertical movement mechanism 7, and the state shown in the first figure in which the seal cap 13 is brought into contact with the furnace mouth flange 14, that is, the boat 4 is It is brought into the pipe 3. In this state, the space between the reaction tubes 2 and 3 on the outside and inside of the vacuum exhaust port 9 is evacuated, the reaction gas is introduced from the reaction gas introduction port 8a, and is discharged from the reaction gas nozzle 8, and the reaction gas is discharged onto the boat 4. A film is formed on the surface of each wafer 5 by heating a large number of wafers 5 placed thereon in the tubular heating furnace 1.
しかる後、上下移動機構７によりキャップ６上のボート
４及びインナーリング１７を下動させ、インナーリング
１７が第２図示のように炉口フランジ１４の係止部１４
ａに対接して係止された状態になり、更にキャップ６上
のボート４を上下移動機構７により下動することにより
ボート４とこれに載置され表面に生成膜が生成された多
数のウェーハ５を炉口１６より搬出することができる。Thereafter, the boat 4 on the cap 6 and the inner ring 17 are moved downward by the vertical movement mechanism 7, and the inner ring 17 is attached to the locking part 14 of the furnace mouth flange 14 as shown in the second figure.
When the boat 4 on the cap 6 is moved downward by the vertical movement mechanism 7, the boat 4 and a large number of wafers placed on the boat 4 and having a generated film formed on the surface are moved. 5 can be carried out from the furnace port 16.
内側の反応管３とキャップ６との間に挿設されたインナ
ーリング１７が、炉口１６からボート４を搬入、確出す
る過程で、ボート４の搬入、搬出時の熱対流、ボート４
の搬入時の乱流、ボート４の搬出時の炉圧力と外気圧と
の差圧による空気の引き込み等を抑制する役目を果し、
内側反応管３内への空気の混入や塵埃の侵入を減少させ
ることができる。In the process of loading and unloading the boat 4 from the furnace mouth 16, the inner ring 17 inserted between the inner reaction tube 3 and the cap 6 prevents heat convection during loading and unloading the boat 4,
It plays the role of suppressing turbulent flow when the boat 4 is brought in, and air being drawn in due to the differential pressure between the furnace pressure and the outside pressure when the boat 4 is taken out.
The intrusion of air and dust into the inner reaction tube 3 can be reduced.
上述のように本発明によれば、加熱用の管状炉１を垂直
に設置し、この管状炉１内に反応管３を挿設し、この反
応管３内にウェーハ５を載置したボート４を搬入すると
共に反応ガスを反応ガス導入口８ａより導入することに
よりウェーハ５０表面に生成膜を生成する縦形炉におい
て、反応管３とボート４を支持するキャップ６との間に
、上下移動機構７によって上下動せしめられる筒状のイ
ンナーリング１７を挿設すると共に、このインナーリン
グＩ７の上部には炉口フランジ１４に係止される突起部
１８を設けてなるので、筒状のインナーリング１７によ
り反応管３内への空気の混入や塵埃の侵入を大幅に減少
させることができ、ウェーハ５の生成膜に異物が混入す
ることを回避することができるため、ウェーハ５上の生
成膜を均一にしかもクリーンにすることができる。As described above, according to the present invention, a heating tubular furnace 1 is installed vertically, a reaction tube 3 is inserted into this tubular furnace 1, and a boat 4 with a wafer 5 placed inside this reaction tube 3 is installed. In a vertical furnace in which a film is produced on the surface of a wafer 50 by carrying in a reaction gas and introducing a reaction gas through a reaction gas inlet 8a, a vertical movement mechanism 7 is provided between a reaction tube 3 and a cap 6 that supports a boat 4. A cylindrical inner ring 17 is inserted that can be moved up and down by the cylindrical inner ring 17, and a protrusion 18 that is locked to the furnace mouth flange 14 is provided on the upper part of the inner ring I7. It is possible to significantly reduce the intrusion of air and dust into the reaction tube 3, and it is possible to avoid contamination of the formed film on the wafer 5 with foreign matter, so that the formed film on the wafer 5 can be uniformly formed. Moreover, it can be cleaned.
第１図は本発明炉口部の一実施例を適用した縦形炉の簡
略断面図、第２図は同じく下降または上昇途中の状態を
示す簡略断面図、第３図は本発明におけるインナーリン
グの斜視図、第４図は縦形炉の従来例を示す簡略断面図
、第５図は同しく下降または上昇途中の状態を示す簡略
断面図である。
１・・・・・・管状炉（ヒータ）、２・・・・・・外側
の反応管（アウタチューブ）、３・・・・・・内側の反
応管（インナーチューブ）、４・旧・・ボート、５・・
・・・・ウェーハ、６・・・・・・キャンプ、７・・・
・・・上下移動機構、８ａ・・・・・・反応ガス導入口
、８・・則反応ガスノズル、９・・・・・・真空排気口
、１３・・・・・・シールキャップ、１４・・・・・・
、ｔＦ口７ランジ、１４ａ・・・・・・係止部、１６・
・・・・・炉口、１７・旧・・筒状のインナーリング、
１８・・・・・・突起部。
箋２目FIG. 1 is a simplified cross-sectional view of a vertical furnace to which an embodiment of the furnace mouth part of the present invention is applied, FIG. A perspective view, FIG. 4 is a simplified sectional view showing a conventional example of a vertical furnace, and FIG. 5 is a simplified sectional view showing a state in the middle of descent or ascent. 1...Tubular furnace (heater), 2...Outer reaction tube (outer tube), 3...Inner reaction tube (inner tube), 4... Old... Boat, 5...
...Wafer, 6...Camp, 7...
... Vertical movement mechanism, 8a ... Reaction gas inlet, 8 ... Rule reaction gas nozzle, 9 ... Vacuum exhaust port, 13 ... Seal cap, 14 ...・・・・・・
, tF port 7 lange, 14a...Locking part, 16.
... Furnace mouth, 17. Old... Cylindrical inner ring,
18... Protrusion. 2nd note
Claims (1)
反応管３を挿設し、この反応管３内にウェーハ５を載置
したボート４を搬入すると共に反応ガスを反応ガス導入
口８ａより導入することによりウェーハ５の表面に生成
膜を生成する縦形炉において、反応管３とボート４を支
持するキャップ６との間に、上下移動機構７によって上
下動せしめられる筒状のインナーリング１７を挿設する
と共に、このインナーリング１７の上部には炉口フラン
ジ１４に係止される突起部１８を設けてなる縦形炉にお
ける炉口部。A heating tubular furnace 1 is installed vertically, a reaction tube 3 is inserted into the tubular furnace 1, a boat 4 carrying a wafer 5 is carried into the reaction tube 3, and a reaction gas is introduced. In a vertical furnace in which a film is produced on the surface of a wafer 5 by introducing it from an opening 8a, a cylindrical inner tube that is moved up and down by a vertical movement mechanism 7 is installed between a reaction tube 3 and a cap 6 that supports a boat 4. A furnace mouth part in a vertical furnace, in which a ring 17 is inserted and a protrusion 18 that is engaged with a furnace mouth flange 14 is provided on the upper part of the inner ring 17.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63020830A JP2602265B2 (en) | 1988-01-29 | 1988-01-29 | Vertical furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63020830A JP2602265B2 (en) | 1988-01-29 | 1988-01-29 | Vertical furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01194415A true JPH01194415A (en) | 1989-08-04 |
| JP2602265B2 JP2602265B2 (en) | 1997-04-23 |
Family
ID=12037965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63020830A Expired - Lifetime JP2602265B2 (en) | 1988-01-29 | 1988-01-29 | Vertical furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2602265B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994011899A1 (en) * | 1992-11-13 | 1994-05-26 | Asm Japan K.K. | Heat treatment apparatus |
| JP2003173979A (en) * | 2001-09-26 | 2003-06-20 | Seiko Instruments Inc | Reduced pressure vapor phase growing apparatus |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6120318A (en) * | 1984-07-06 | 1986-01-29 | Toshiba Corp | Vertical diffusion furnace |
| JPS62186421U (en) * | 1986-05-19 | 1987-11-27 | ||
| JPS6319817A (en) * | 1986-07-11 | 1988-01-27 | Mitsubishi Electric Corp | Semiconductor manufacture equipment |
| JPS647517A (en) * | 1987-06-29 | 1989-01-11 | Nec Corp | Heat treatment device for semiconductor substrate |
| JPH01185916A (en) * | 1988-01-21 | 1989-07-25 | Tel Sagami Ltd | Heat-treatment apparatus |
-
1988
- 1988-01-29 JP JP63020830A patent/JP2602265B2/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6120318A (en) * | 1984-07-06 | 1986-01-29 | Toshiba Corp | Vertical diffusion furnace |
| JPS62186421U (en) * | 1986-05-19 | 1987-11-27 | ||
| JPS6319817A (en) * | 1986-07-11 | 1988-01-27 | Mitsubishi Electric Corp | Semiconductor manufacture equipment |
| JPS647517A (en) * | 1987-06-29 | 1989-01-11 | Nec Corp | Heat treatment device for semiconductor substrate |
| JPH01185916A (en) * | 1988-01-21 | 1989-07-25 | Tel Sagami Ltd | Heat-treatment apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1994011899A1 (en) * | 1992-11-13 | 1994-05-26 | Asm Japan K.K. | Heat treatment apparatus |
| US5509967A (en) * | 1992-11-13 | 1996-04-23 | Asm Japan K.K. | Heat treatment apparatus |
| JP2003173979A (en) * | 2001-09-26 | 2003-06-20 | Seiko Instruments Inc | Reduced pressure vapor phase growing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2602265B2 (en) | 1997-04-23 |
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