JPS5732643A - Annealing method of compound semiconductor single crystal - Google Patents

Annealing method of compound semiconductor single crystal

Info

Publication number
JPS5732643A
JPS5732643A JP10721980A JP10721980A JPS5732643A JP S5732643 A JPS5732643 A JP S5732643A JP 10721980 A JP10721980 A JP 10721980A JP 10721980 A JP10721980 A JP 10721980A JP S5732643 A JPS5732643 A JP S5732643A
Authority
JP
Japan
Prior art keywords
single crystal
compound semiconductor
carbon
covered
semiconductor single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10721980A
Other languages
Japanese (ja)
Other versions
JPH022840B2 (en
Inventor
Shoichi Washitsuka
Masayuki Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10721980A priority Critical patent/JPS5732643A/en
Publication of JPS5732643A publication Critical patent/JPS5732643A/en
Publication of JPH022840B2 publication Critical patent/JPH022840B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To remove internal strain in a compound semiconductor single crystal made by liquid capsule method under a high pressure by annealing it in an inert gas as placed in a cylindrical vessel after the surrounding area thereof is covered with a single crystal powder and a carbon sheet. CONSTITUTION:After a GaP single crystal 1 is covered with a single crystal powder 2 of the same type with a particle size of 10-30mu and a carbon felt 3, it is housed in a cylindrical vessel 4 and a carbon lid 5 is put thereon. The vessel is charged into a horizontal electric furnace 8 having a furnace core tube 6 and a heat generating body 7. The single crystal is annealed feeding N2 gas. This prevents the volatilization of P from the single crystal and the generation of cracks thereby reducing the strain thereof.
JP10721980A 1980-08-06 1980-08-06 Annealing method of compound semiconductor single crystal Granted JPS5732643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10721980A JPS5732643A (en) 1980-08-06 1980-08-06 Annealing method of compound semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10721980A JPS5732643A (en) 1980-08-06 1980-08-06 Annealing method of compound semiconductor single crystal

Publications (2)

Publication Number Publication Date
JPS5732643A true JPS5732643A (en) 1982-02-22
JPH022840B2 JPH022840B2 (en) 1990-01-19

Family

ID=14453503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10721980A Granted JPS5732643A (en) 1980-08-06 1980-08-06 Annealing method of compound semiconductor single crystal

Country Status (1)

Country Link
JP (1) JPS5732643A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60171300A (en) * 1984-02-14 1985-09-04 Sumitomo Electric Ind Ltd Homogenizing method of compound semiconductor crystal
JPS61222999A (en) * 1985-03-27 1986-10-03 Dowa Mining Co Ltd Method of improving electric characteristics of single crystal of compound semiconductor of group iii-v
JPS62206839A (en) * 1986-03-06 1987-09-11 Mitsubishi Monsanto Chem Co Manufacture of epitaxial wafer for light-emitting diode
US5093284A (en) * 1988-05-27 1992-03-03 Hitachi Chemical Company, Ltd. Process for homogenizing compound semiconductor single crystal in properties

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102570A (en) * 1972-04-04 1973-12-22
JPS4933552A (en) * 1972-07-26 1974-03-28
JPS5361269A (en) * 1976-11-15 1978-06-01 Hitachi Ltd Heat treatment of compound semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102570A (en) * 1972-04-04 1973-12-22
JPS4933552A (en) * 1972-07-26 1974-03-28
JPS5361269A (en) * 1976-11-15 1978-06-01 Hitachi Ltd Heat treatment of compound semiconductor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60171300A (en) * 1984-02-14 1985-09-04 Sumitomo Electric Ind Ltd Homogenizing method of compound semiconductor crystal
JPH0227320B2 (en) * 1984-02-14 1990-06-15 Sumitomo Denki Kogyo Kk
JPS61222999A (en) * 1985-03-27 1986-10-03 Dowa Mining Co Ltd Method of improving electric characteristics of single crystal of compound semiconductor of group iii-v
JPS62206839A (en) * 1986-03-06 1987-09-11 Mitsubishi Monsanto Chem Co Manufacture of epitaxial wafer for light-emitting diode
US5093284A (en) * 1988-05-27 1992-03-03 Hitachi Chemical Company, Ltd. Process for homogenizing compound semiconductor single crystal in properties

Also Published As

Publication number Publication date
JPH022840B2 (en) 1990-01-19

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