JPS48102570A - - Google Patents

Info

Publication number
JPS48102570A
JPS48102570A JP3364872A JP3364872A JPS48102570A JP S48102570 A JPS48102570 A JP S48102570A JP 3364872 A JP3364872 A JP 3364872A JP 3364872 A JP3364872 A JP 3364872A JP S48102570 A JPS48102570 A JP S48102570A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3364872A
Other languages
Japanese (ja)
Other versions
JPS5346070B2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3364872A priority Critical patent/JPS5346070B2/ja
Publication of JPS48102570A publication Critical patent/JPS48102570A/ja
Publication of JPS5346070B2 publication Critical patent/JPS5346070B2/ja
Expired legal-status Critical Current

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Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP3364872A 1972-04-04 1972-04-04 Expired JPS5346070B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3364872A JPS5346070B2 (en) 1972-04-04 1972-04-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3364872A JPS5346070B2 (en) 1972-04-04 1972-04-04

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP54135275A Division JPS5929558B2 (en) 1979-10-22 1979-10-22 Semi-insulating gallium arsenide crystal

Publications (2)

Publication Number Publication Date
JPS48102570A true JPS48102570A (en) 1973-12-22
JPS5346070B2 JPS5346070B2 (en) 1978-12-11

Family

ID=12392255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3364872A Expired JPS5346070B2 (en) 1972-04-04 1972-04-04

Country Status (1)

Country Link
JP (1) JPS5346070B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117300A (en) * 1976-03-29 1977-10-01 Sumitomo Electric Ind Ltd Semi-insulating single crystal of the group iii-v compounds
JPS5363310A (en) * 1976-11-19 1978-06-06 Kyowa Gas Chem Ind Co Ltd Preparation of monomer composition containing pb and preparation of polymerhaving radiation shielding ability
US4158851A (en) * 1976-03-29 1979-06-19 Sumitomo Electric Industries, Ltd. Semi-insulating gallium arsenide single crystal
JPS55113699A (en) * 1979-10-22 1980-09-02 Sumitomo Electric Ind Ltd Semi-insulating gallium arsenide crystal
JPS5732643A (en) * 1980-08-06 1982-02-22 Toshiba Corp Annealing method of compound semiconductor single crystal
JPH02239195A (en) * 1989-03-09 1990-09-21 Nippon Mining Co Ltd Compound semiconductor single crystal

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6093882U (en) * 1983-12-02 1985-06-26 東辰機設株式会社 refrigerator
JPS616571A (en) * 1984-06-19 1986-01-13 三洋電機株式会社 Storage warehouse

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117300A (en) * 1976-03-29 1977-10-01 Sumitomo Electric Ind Ltd Semi-insulating single crystal of the group iii-v compounds
US4158851A (en) * 1976-03-29 1979-06-19 Sumitomo Electric Industries, Ltd. Semi-insulating gallium arsenide single crystal
JPS5919911B2 (en) * 1976-03-29 1984-05-09 住友電気工業株式会社 Semi-insulating Group 3-5 compound single crystal
JPS5363310A (en) * 1976-11-19 1978-06-06 Kyowa Gas Chem Ind Co Ltd Preparation of monomer composition containing pb and preparation of polymerhaving radiation shielding ability
JPS5533805B2 (en) * 1976-11-19 1980-09-03
JPS55113699A (en) * 1979-10-22 1980-09-02 Sumitomo Electric Ind Ltd Semi-insulating gallium arsenide crystal
JPS5929558B2 (en) * 1979-10-22 1984-07-21 住友電気工業株式会社 Semi-insulating gallium arsenide crystal
JPS5732643A (en) * 1980-08-06 1982-02-22 Toshiba Corp Annealing method of compound semiconductor single crystal
JPH022840B2 (en) * 1980-08-06 1990-01-19 Tokyo Shibaura Electric Co
JPH02239195A (en) * 1989-03-09 1990-09-21 Nippon Mining Co Ltd Compound semiconductor single crystal
JPH0543679B2 (en) * 1989-03-09 1993-07-02 Nikko Kyoseki Kk

Also Published As

Publication number Publication date
JPS5346070B2 (en) 1978-12-11

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