JPS56126982A - Manufacture of photoconductive film - Google Patents
Manufacture of photoconductive filmInfo
- Publication number
- JPS56126982A JPS56126982A JP3180180A JP3180180A JPS56126982A JP S56126982 A JPS56126982 A JP S56126982A JP 3180180 A JP3180180 A JP 3180180A JP 3180180 A JP3180180 A JP 3180180A JP S56126982 A JPS56126982 A JP S56126982A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- reaction
- oxygen
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 5
- 239000012495 reaction gas Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910001882 dioxygen Inorganic materials 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 150000003377 silicon compounds Chemical class 0.000 abstract 3
- 150000002927 oxygen compounds Chemical class 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To form a silicon film which improves its withstand voltage on a substrate by employing as reaction gas diluted with silicon compound gas or intert gas, conducting a discharge plasma reaction and adding oxygen compound or oxygen gas to the reaction gas. CONSTITUTION:A silicon compound gas guide tube 2 is formed at a reactor 1 for conducting a glow discharge, and an oxygen gas guide tube 3 is connected to the tube 2. A high frequency power source 4 is connected to the electrode 5 confronting the reactor 1, a substrate 6 is placed on a substrate holder 7 in the reactor 1, and a substrate heating heater 8 is disposed under the holder 7. Silicon compound gas or inert gas is introduced as the reaction gas from the tube 2, and a discharge plasma reaction is conducted with the diluted reaction gas. Oxygen gas or oxygen compound gas is added to the reaction gas from the tube 3 to form a silicon film on the substrate 6, the withstand voltage of the silicon film is improved, and the application range of the photoconductive film can be expanded.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3180180A JPS56126982A (en) | 1980-03-12 | 1980-03-12 | Manufacture of photoconductive film |
| EP81100992A EP0035146B1 (en) | 1980-02-15 | 1981-02-12 | Semiconductor photoelectric device |
| DE8181100992T DE3176910D1 (en) | 1980-02-15 | 1981-02-12 | Semiconductor photoelectric device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3180180A JPS56126982A (en) | 1980-03-12 | 1980-03-12 | Manufacture of photoconductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56126982A true JPS56126982A (en) | 1981-10-05 |
Family
ID=12341169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3180180A Pending JPS56126982A (en) | 1980-02-15 | 1980-03-12 | Manufacture of photoconductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56126982A (en) |
-
1980
- 1980-03-12 JP JP3180180A patent/JPS56126982A/en active Pending
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