JPS6489375A - Manufacture of photoconductor - Google Patents

Manufacture of photoconductor

Info

Publication number
JPS6489375A
JPS6489375A JP62244764A JP24476487A JPS6489375A JP S6489375 A JPS6489375 A JP S6489375A JP 62244764 A JP62244764 A JP 62244764A JP 24476487 A JP24476487 A JP 24476487A JP S6489375 A JPS6489375 A JP S6489375A
Authority
JP
Japan
Prior art keywords
gas
reaction
reaction chamber
photoelectric characteristics
silane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62244764A
Other languages
Japanese (ja)
Inventor
Kazuki Wakita
Yoshikazu Fujiwara
Kunio Ohashi
Shiro Narukawa
Hisashi Hayakawa
Shoichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62244764A priority Critical patent/JPS6489375A/en
Publication of JPS6489375A publication Critical patent/JPS6489375A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To control spectral sensitivity with preventing deterioration of photoelectric characteristics by introducing and combining reaction gas, in which feedstock gas mainly composed of silane and NO gas are used, in a reaction chamber. CONSTITUTION:After a drum is installed on a drum supporter 2, and a reaction chamber is evacuated to form a vacuum condition, feedstock gas and reaction gas are introduced by a gas introducing pipe 12 in the reaction chamber 1 as fixed flow is maintained. And its inner pressure is held at fixed pressure, voltage is applied among the surface of a supporter 2 and electrodes 4, 4 by a high frequency power source 6 and glow discharge is performed. The gas which is mainly composed of silane(SiH4) is used, and NO and H2 gases are used as a reaction gas. Therefore, photoelectric characteristics of a photoconductor are protected from the deterioration after a thin film is formed and excellent photoelectric characteristics can be obtained. Spectral sensitivity characteristics can also be controlled.
JP62244764A 1987-09-29 1987-09-29 Manufacture of photoconductor Pending JPS6489375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62244764A JPS6489375A (en) 1987-09-29 1987-09-29 Manufacture of photoconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62244764A JPS6489375A (en) 1987-09-29 1987-09-29 Manufacture of photoconductor

Publications (1)

Publication Number Publication Date
JPS6489375A true JPS6489375A (en) 1989-04-03

Family

ID=17123556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62244764A Pending JPS6489375A (en) 1987-09-29 1987-09-29 Manufacture of photoconductor

Country Status (1)

Country Link
JP (1) JPS6489375A (en)

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