JPS5688380A - Amorphous hydrogenated silicon photoconductive layer - Google Patents

Amorphous hydrogenated silicon photoconductive layer

Info

Publication number
JPS5688380A
JPS5688380A JP16657379A JP16657379A JPS5688380A JP S5688380 A JPS5688380 A JP S5688380A JP 16657379 A JP16657379 A JP 16657379A JP 16657379 A JP16657379 A JP 16657379A JP S5688380 A JPS5688380 A JP S5688380A
Authority
JP
Japan
Prior art keywords
photoconductive layer
tube
layer
hydrogenated silicon
amorphous hydrogenated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16657379A
Other languages
Japanese (ja)
Inventor
Masao Sugata
Masaki Fukaya
Takashi Nakagiri
Ikuaki Yamagata
Yutaka Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP16657379A priority Critical patent/JPS5688380A/en
Publication of JPS5688380A publication Critical patent/JPS5688380A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Silicon Compounds (AREA)

Abstract

PURPOSE:To obtain excellent light sensitivity and light responsiveness in the photoconductive layer by specifying two peak wavelengths of infrared ray absorption spectra when forming the layer using amorphous hydrogenated silicon and also specifying the intensity ratio thereof. CONSTITUTION:A cathode electrode 3 is arranged at an inlet tube 6 under the tube 6 in an accumulation chamber 1 having an annular gas inlet tube 6 and an exhaust tube 7 provided with a number of gas flow outlets, is covered with a quartz plate 5, an anode electrode 2 containing internally a heater 4 is provided on the tube 6, and a holder 8 for holding a support formed of quartz or the like for precipitating the photoconductive layer is mounted on the lower surface of the electrode. Thus, Ar gas containing 20vol% of SiH4 is fed to the chamber 1, a high frequency voltage is applied between the electrodes 2 and 3, and the photoconductive layer is precipitated on the support by plasma. At this time two peaks of 800+ or -10<-1>cm<-1> and 970+ or -10<-1>cm<-1> are produced in the infrared ray absorption spectra of the layer, and the intensities thereof are also specified within 0.2-1.0.
JP16657379A 1979-12-21 1979-12-21 Amorphous hydrogenated silicon photoconductive layer Pending JPS5688380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16657379A JPS5688380A (en) 1979-12-21 1979-12-21 Amorphous hydrogenated silicon photoconductive layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16657379A JPS5688380A (en) 1979-12-21 1979-12-21 Amorphous hydrogenated silicon photoconductive layer

Publications (1)

Publication Number Publication Date
JPS5688380A true JPS5688380A (en) 1981-07-17

Family

ID=15833761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16657379A Pending JPS5688380A (en) 1979-12-21 1979-12-21 Amorphous hydrogenated silicon photoconductive layer

Country Status (1)

Country Link
JP (1) JPS5688380A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016802A (en) * 1983-07-01 1985-01-28 Olympus Optical Co Ltd Agent for purifying raw material gas of semiconductor, its preparation and its use
JPS60209249A (en) * 1984-04-02 1985-10-21 Olympus Optical Co Ltd Purifying agent for industrial gaseous raw material and method for preparation and use thereof
US4861312A (en) * 1987-03-19 1989-08-29 Laurel Bank Machine Co., Ltd. Coin handling apparatus
US4896481A (en) * 1987-07-02 1990-01-30 Laurel Bank Machines Co., Ltd. Coin receiving and wrapping machine
US4904223A (en) * 1987-10-06 1990-02-27 Laurel Bank Machines Co., Ltd. Coin sorting apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016802A (en) * 1983-07-01 1985-01-28 Olympus Optical Co Ltd Agent for purifying raw material gas of semiconductor, its preparation and its use
JPH054321B2 (en) * 1983-07-01 1993-01-19 Orinpasu Kogaku Kogyo Kk
JPS60209249A (en) * 1984-04-02 1985-10-21 Olympus Optical Co Ltd Purifying agent for industrial gaseous raw material and method for preparation and use thereof
US4861312A (en) * 1987-03-19 1989-08-29 Laurel Bank Machine Co., Ltd. Coin handling apparatus
US4896481A (en) * 1987-07-02 1990-01-30 Laurel Bank Machines Co., Ltd. Coin receiving and wrapping machine
US4904223A (en) * 1987-10-06 1990-02-27 Laurel Bank Machines Co., Ltd. Coin sorting apparatus

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