JPS5671927A - Manufacture of amorphous hydro-silicon layer - Google Patents

Manufacture of amorphous hydro-silicon layer

Info

Publication number
JPS5671927A
JPS5671927A JP14861379A JP14861379A JPS5671927A JP S5671927 A JPS5671927 A JP S5671927A JP 14861379 A JP14861379 A JP 14861379A JP 14861379 A JP14861379 A JP 14861379A JP S5671927 A JPS5671927 A JP S5671927A
Authority
JP
Japan
Prior art keywords
plate
filament
crucible
raw material
bell jar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14861379A
Other languages
Japanese (ja)
Inventor
Tatsuo Masaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP14861379A priority Critical patent/JPS5671927A/en
Publication of JPS5671927A publication Critical patent/JPS5671927A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To obtain high mass productivity by arranging a crucible at the bottom part of a bell jar wherein a raw material Si is contained in the crucible to evaporate the raw material by an electron gun and activation is done by using a filament and a plate while guiding H2 gas and an Si layer is precipitated on a support substance provided at the upper part of the bell jar. CONSTITUTION:A decompression chamber 4 is composed by a base plate 1 and a stainless bell jar 3 and a crucible 7 containing a monocrystal or polycrystal raw material Si6 and an electron gun 8 locating near the curcible 7 are arranged and they are covered with a shroud 16 having an opening at the center. Next, a shutter 9 is placed on the shroud 16 and an annular H2 gas guide pipe 5 having many small holes is arranged. A meshy filament 10 and a meshy plate 11 opposing each other are provided on the pipe 5 and power sources 14 and 15 are connected to the filament 10 and the plate 11 respectively. Furthermore, umbrella type rotary plates 12-1 and 12-2 having a heating device 13 at the reverse side of the plates 12-1, 12-2 are arranged on the filament 10 and the plate 11. And an amorphous Si film is precipitated while applying differential exhaustion to the gun 8 section and a plasma generation section.
JP14861379A 1979-11-15 1979-11-15 Manufacture of amorphous hydro-silicon layer Pending JPS5671927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14861379A JPS5671927A (en) 1979-11-15 1979-11-15 Manufacture of amorphous hydro-silicon layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14861379A JPS5671927A (en) 1979-11-15 1979-11-15 Manufacture of amorphous hydro-silicon layer

Publications (1)

Publication Number Publication Date
JPS5671927A true JPS5671927A (en) 1981-06-15

Family

ID=15456691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14861379A Pending JPS5671927A (en) 1979-11-15 1979-11-15 Manufacture of amorphous hydro-silicon layer

Country Status (1)

Country Link
JP (1) JPS5671927A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122784A (en) * 1982-01-18 1983-07-21 Mitsui Toatsu Chem Inc Solar battery
JPS58143589A (en) * 1982-02-19 1983-08-26 Kanegafuchi Chem Ind Co Ltd Silicon base semiconductor
JPS58191477A (en) * 1982-05-06 1983-11-08 Mitsui Toatsu Chem Inc Manufacture of solar battery
JPS5914680A (en) * 1982-07-16 1984-01-25 Mitsui Toatsu Chem Inc Amorphous silicon solar battery and manufacture thereof
JPS6091360A (en) * 1983-10-25 1985-05-22 Kyocera Corp Photoconductive member
JPS60104955A (en) * 1983-11-11 1985-06-10 Hitachi Koki Co Ltd Electrophotographic image forming member
JPS62224922A (en) * 1986-03-27 1987-10-02 Mitsui Toatsu Chem Inc Manufacture of semiconductor and equipment therefor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122784A (en) * 1982-01-18 1983-07-21 Mitsui Toatsu Chem Inc Solar battery
JPH0472391B2 (en) * 1982-01-18 1992-11-18 Mitsui Toatsu Chemicals
JPS58143589A (en) * 1982-02-19 1983-08-26 Kanegafuchi Chem Ind Co Ltd Silicon base semiconductor
JPH0568109B2 (en) * 1982-02-19 1993-09-28 Kanegafuchi Chemical Ind
JPS58191477A (en) * 1982-05-06 1983-11-08 Mitsui Toatsu Chem Inc Manufacture of solar battery
JPS5914680A (en) * 1982-07-16 1984-01-25 Mitsui Toatsu Chem Inc Amorphous silicon solar battery and manufacture thereof
JPS6091360A (en) * 1983-10-25 1985-05-22 Kyocera Corp Photoconductive member
JPS60104955A (en) * 1983-11-11 1985-06-10 Hitachi Koki Co Ltd Electrophotographic image forming member
JPS62224922A (en) * 1986-03-27 1987-10-02 Mitsui Toatsu Chem Inc Manufacture of semiconductor and equipment therefor

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