JPS6452699A - Vapor phase-synthesized diamond and synthesis thereof - Google Patents

Vapor phase-synthesized diamond and synthesis thereof

Info

Publication number
JPS6452699A
JPS6452699A JP62184512A JP18451287A JPS6452699A JP S6452699 A JPS6452699 A JP S6452699A JP 62184512 A JP62184512 A JP 62184512A JP 18451287 A JP18451287 A JP 18451287A JP S6452699 A JPS6452699 A JP S6452699A
Authority
JP
Japan
Prior art keywords
emitter
synthesis
perfection
activation
peak
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62184512A
Other languages
Japanese (ja)
Other versions
JP2501589B2 (en
Inventor
Akihiko Ikegaya
Masaaki Tobioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of JPS6452699A publication Critical patent/JPS6452699A/en
Application granted granted Critical
Publication of JP2501589B2 publication Critical patent/JP2501589B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a diamond film of high degree of perfection with each specific average diamond particle size and the half-width of the peak in the Raman spectrometry, by combining the thermal activation due to thermoelectron emitter heated to high temperatures and activation due to DC plasma formation. CONSTITUTION:CH4 and H2 are introduced through a feedstock gas introduction port 11 into a quartz reaction tube 18, being brought to thermal activation by a thermoelectron emitter 12 heated to >=1,600 deg.C. Simultaneously, using a DC source 16, the thermoelectron emitter 12 and a substrate 13 are connected to the cathode and anode, respectively, and a DC plasma is generated between said emitter 12 and substrate on the support 14 to further enhance the activation of the feedstock gas, thus obtaining the objective diamond film of high degree of perfection with an average diamond particle size of <2mum and the half-width of the peak at 1,334cm<-1> in the Raman spectrometry of <50cm<-1>.
JP62184512A 1986-07-23 1987-07-22 Vapor-phase synthetic diamond and its synthesis method Expired - Fee Related JP2501589B2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP61-173365 1986-07-23
JP17336586 1986-07-23
JP11659887 1987-05-13
JP62-116598 1987-05-13

Publications (2)

Publication Number Publication Date
JPS6452699A true JPS6452699A (en) 1989-02-28
JP2501589B2 JP2501589B2 (en) 1996-05-29

Family

ID=26454900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62184512A Expired - Fee Related JP2501589B2 (en) 1986-07-23 1987-07-22 Vapor-phase synthetic diamond and its synthesis method

Country Status (1)

Country Link
JP (1) JP2501589B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02232106A (en) * 1989-03-03 1990-09-14 Sumitomo Electric Ind Ltd Polycrystal diamond for tool
EP0846792A1 (en) * 1996-12-04 1998-06-10 Sumitomo Electric Industries, Ltd. Method of synthesizing diamond
JPH10259482A (en) * 1997-03-19 1998-09-29 Sanyo Electric Co Ltd Formation of hard carbon coating
US6200652B1 (en) 1997-07-07 2001-03-13 Cvd Diamond Corporation Method for nucleation and deposition of diamond using hot-filament DC plasma
US6528115B1 (en) 1997-03-19 2003-03-04 Sanyo Electric Co., Ltd. Hard carbon thin film and method of forming the same
JP2005343705A (en) * 2004-05-31 2005-12-15 Sumitomo Electric Ind Ltd METHOD FOR PRODUCING AlxGayIn1-x-yN CRYSTAL

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123203A (en) * 1983-12-01 1985-07-01 Mitsubishi Metal Corp Surface-clad cemented carbide member for cutting tool and wear resisting tool

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123203A (en) * 1983-12-01 1985-07-01 Mitsubishi Metal Corp Surface-clad cemented carbide member for cutting tool and wear resisting tool

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02232106A (en) * 1989-03-03 1990-09-14 Sumitomo Electric Ind Ltd Polycrystal diamond for tool
EP0846792A1 (en) * 1996-12-04 1998-06-10 Sumitomo Electric Industries, Ltd. Method of synthesizing diamond
US5993919A (en) * 1996-12-04 1999-11-30 Sumitomo Electric Industries, Ltd. Method of synthesizing diamond
JPH10259482A (en) * 1997-03-19 1998-09-29 Sanyo Electric Co Ltd Formation of hard carbon coating
US6528115B1 (en) 1997-03-19 2003-03-04 Sanyo Electric Co., Ltd. Hard carbon thin film and method of forming the same
US6200652B1 (en) 1997-07-07 2001-03-13 Cvd Diamond Corporation Method for nucleation and deposition of diamond using hot-filament DC plasma
JP2005343705A (en) * 2004-05-31 2005-12-15 Sumitomo Electric Ind Ltd METHOD FOR PRODUCING AlxGayIn1-x-yN CRYSTAL

Also Published As

Publication number Publication date
JP2501589B2 (en) 1996-05-29

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees