JPS57101000A - Preparation of ceramic whisker - Google Patents

Preparation of ceramic whisker

Info

Publication number
JPS57101000A
JPS57101000A JP55176244A JP17624480A JPS57101000A JP S57101000 A JPS57101000 A JP S57101000A JP 55176244 A JP55176244 A JP 55176244A JP 17624480 A JP17624480 A JP 17624480A JP S57101000 A JPS57101000 A JP S57101000A
Authority
JP
Japan
Prior art keywords
gas
silicon
whiskers
reaction tube
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55176244A
Other languages
Japanese (ja)
Other versions
JPS644999B2 (en
Inventor
Eiji Kamijo
Masayuki Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP55176244A priority Critical patent/JPS57101000A/en
Publication of JPS57101000A publication Critical patent/JPS57101000A/en
Publication of JPS644999B2 publication Critical patent/JPS644999B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

PURPOSE:To prepare useful long whiskers, in high yield, by heating a powdery mixture of silicon dioxide and a reducing agent, and introducing the generated silicon monoxide gas into a reaction tube having specific atmosphere. CONSTITUTION:A powdery mixture obtained by mixing silicon dioxide and a reducing agent such as metallic silicon, carbon, etc. is heated in an inert gas at >=1,300 deg.C to generate silicon monoxide gas or a mixture of silicon monoxide gas and carbon monoxide gas. The generated gas is introduced together with a carrier gas consisting of an inert gas such as nitrogen gas, carbon dioxide gas, argon gas, helium gas, etc. into a reaction tube heated at >=1,000 deg.C and containing carbon impregnated with a metal selected from iron, cobalt and nickel or their alloys. Silicon nitride whiskers are deposited and grown in a nitriding atmosphere, and silicon carbide whiskers are obtained in a reducing and cementatious atmosphere containing carbon monoxide gas or hydrogen gas. The grown whiskers are taken out of the reaction tube.
JP55176244A 1980-12-12 1980-12-12 Preparation of ceramic whisker Granted JPS57101000A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55176244A JPS57101000A (en) 1980-12-12 1980-12-12 Preparation of ceramic whisker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55176244A JPS57101000A (en) 1980-12-12 1980-12-12 Preparation of ceramic whisker

Publications (2)

Publication Number Publication Date
JPS57101000A true JPS57101000A (en) 1982-06-23
JPS644999B2 JPS644999B2 (en) 1989-01-27

Family

ID=16010159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55176244A Granted JPS57101000A (en) 1980-12-12 1980-12-12 Preparation of ceramic whisker

Country Status (1)

Country Link
JP (1) JPS57101000A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62158200A (en) * 1985-12-30 1987-07-14 アメリカ合衆国 Manufacture of silicon carbide whisker and catalyst therefor
JPS63159299A (en) * 1986-12-20 1988-07-02 Kobe Steel Ltd Production of silicon carbide whisker
JPH01108108A (en) * 1987-10-20 1989-04-25 Agency Of Ind Science & Technol Production of fibrous silicon-oxygen-carbon compound
FR2684091A1 (en) * 1991-11-21 1993-05-28 Pechiney Recherche PROCESS FOR MANUFACTURING METALLIC CARBIDE WITH HIGH SURFACE SPECIFIC UNDERWATER SWEEPING AT ATMOSPHERIC PRESSURE.
CN109594100A (en) * 2018-12-07 2019-04-09 东华大学 A kind of C3N4Loaded Cu/Sn alloy material and its preparation and application

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4922320A (en) * 1972-06-23 1974-02-27
JPS504480A (en) * 1973-05-17 1975-01-17
JPS5417720A (en) * 1977-07-08 1979-02-09 Ricoh Co Ltd Diazo type copying method
JPS56100125A (en) * 1980-01-14 1981-08-11 Sumitomo Electric Ind Ltd Manufacture of silicon carbide whisker
JPS56100115A (en) * 1980-01-14 1981-08-11 Sumitomo Electric Ind Ltd Manufacture of silicon nitride whisker

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4922320A (en) * 1972-06-23 1974-02-27
JPS504480A (en) * 1973-05-17 1975-01-17
JPS5417720A (en) * 1977-07-08 1979-02-09 Ricoh Co Ltd Diazo type copying method
JPS56100125A (en) * 1980-01-14 1981-08-11 Sumitomo Electric Ind Ltd Manufacture of silicon carbide whisker
JPS56100115A (en) * 1980-01-14 1981-08-11 Sumitomo Electric Ind Ltd Manufacture of silicon nitride whisker

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62158200A (en) * 1985-12-30 1987-07-14 アメリカ合衆国 Manufacture of silicon carbide whisker and catalyst therefor
JPS63159299A (en) * 1986-12-20 1988-07-02 Kobe Steel Ltd Production of silicon carbide whisker
JPH0351679B2 (en) * 1986-12-20 1991-08-07 Kobe Seikosho Kk
JPH01108108A (en) * 1987-10-20 1989-04-25 Agency Of Ind Science & Technol Production of fibrous silicon-oxygen-carbon compound
FR2684091A1 (en) * 1991-11-21 1993-05-28 Pechiney Recherche PROCESS FOR MANUFACTURING METALLIC CARBIDE WITH HIGH SURFACE SPECIFIC UNDERWATER SWEEPING AT ATMOSPHERIC PRESSURE.
CN109594100A (en) * 2018-12-07 2019-04-09 东华大学 A kind of C3N4Loaded Cu/Sn alloy material and its preparation and application

Also Published As

Publication number Publication date
JPS644999B2 (en) 1989-01-27

Similar Documents

Publication Publication Date Title
US3726643A (en) Method of producing refractory carbides,borides,silicides,sulfides,and nitrides of metals of groups iv,v,and vi of the periodic system
IL92398A0 (en) Process for preparing self-supporting ceramic bodies and products produced thereby
NO900142D0 (en) PROCESS FOR MANUFACTURE OF SELF-SUBSTANCING BODIES AND PRODUCTS FROM THIS.
US4632849A (en) Method for making a fine powder of a metal compound having ceramic coatings thereon
AU597633B2 (en) Powders for ceramics of metal carbides and nitrides made by carbothermal reduction and process for their manufacture
CZ20011675A3 (en) Process for producing tungsten carbides by carburizing in gaseous phase
JPS57101000A (en) Preparation of ceramic whisker
GB1236913A (en) Manufacture of silicon carbide
US3394991A (en) Manufacture of silicon nitride
ES488100A1 (en) Process for the production of hydrogen cyanide
GB1292422A (en) Process for the production of silicon carbide whiskers
CA2430863A1 (en) Method for producing tungsten carbide
JPS57111300A (en) Preparation of ceramic whisker
JPS53133600A (en) Production of silicon nitride
GB2007635A (en) Method of producing silicon carbide powder and method of producing silicon carbide sintered bodies
JPS6461307A (en) Production of beta-type silicon carbide fine powder
NO170208C (en) SILICON NITRID POWDER, PROCEDURE FOR PREPARING IT AND GRANULES FOR USE IN THE PROCEDURE
JPS56100125A (en) Manufacture of silicon carbide whisker
JPS56100115A (en) Manufacture of silicon nitride whisker
JPH0114168B2 (en)
JPS6442313A (en) Production of carbon
JPH0460046B2 (en)
Weeks et al. Titanium Nitride Reaction Mechanism
JPS62167885A (en) Production of composite body having carbon film
JPS6313931B2 (en)