JPS57101000A - Preparation of ceramic whisker - Google Patents
Preparation of ceramic whiskerInfo
- Publication number
- JPS57101000A JPS57101000A JP55176244A JP17624480A JPS57101000A JP S57101000 A JPS57101000 A JP S57101000A JP 55176244 A JP55176244 A JP 55176244A JP 17624480 A JP17624480 A JP 17624480A JP S57101000 A JPS57101000 A JP S57101000A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon
- whiskers
- reaction tube
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
PURPOSE:To prepare useful long whiskers, in high yield, by heating a powdery mixture of silicon dioxide and a reducing agent, and introducing the generated silicon monoxide gas into a reaction tube having specific atmosphere. CONSTITUTION:A powdery mixture obtained by mixing silicon dioxide and a reducing agent such as metallic silicon, carbon, etc. is heated in an inert gas at >=1,300 deg.C to generate silicon monoxide gas or a mixture of silicon monoxide gas and carbon monoxide gas. The generated gas is introduced together with a carrier gas consisting of an inert gas such as nitrogen gas, carbon dioxide gas, argon gas, helium gas, etc. into a reaction tube heated at >=1,000 deg.C and containing carbon impregnated with a metal selected from iron, cobalt and nickel or their alloys. Silicon nitride whiskers are deposited and grown in a nitriding atmosphere, and silicon carbide whiskers are obtained in a reducing and cementatious atmosphere containing carbon monoxide gas or hydrogen gas. The grown whiskers are taken out of the reaction tube.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55176244A JPS57101000A (en) | 1980-12-12 | 1980-12-12 | Preparation of ceramic whisker |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55176244A JPS57101000A (en) | 1980-12-12 | 1980-12-12 | Preparation of ceramic whisker |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57101000A true JPS57101000A (en) | 1982-06-23 |
JPS644999B2 JPS644999B2 (en) | 1989-01-27 |
Family
ID=16010159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55176244A Granted JPS57101000A (en) | 1980-12-12 | 1980-12-12 | Preparation of ceramic whisker |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57101000A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62158200A (en) * | 1985-12-30 | 1987-07-14 | アメリカ合衆国 | Manufacture of silicon carbide whisker and catalyst therefor |
JPS63159299A (en) * | 1986-12-20 | 1988-07-02 | Kobe Steel Ltd | Production of silicon carbide whisker |
JPH01108108A (en) * | 1987-10-20 | 1989-04-25 | Agency Of Ind Science & Technol | Production of fibrous silicon-oxygen-carbon compound |
FR2684091A1 (en) * | 1991-11-21 | 1993-05-28 | Pechiney Recherche | PROCESS FOR MANUFACTURING METALLIC CARBIDE WITH HIGH SURFACE SPECIFIC UNDERWATER SWEEPING AT ATMOSPHERIC PRESSURE. |
CN109594100A (en) * | 2018-12-07 | 2019-04-09 | 东华大学 | A kind of C3N4Loaded Cu/Sn alloy material and its preparation and application |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4922320A (en) * | 1972-06-23 | 1974-02-27 | ||
JPS504480A (en) * | 1973-05-17 | 1975-01-17 | ||
JPS5417720A (en) * | 1977-07-08 | 1979-02-09 | Ricoh Co Ltd | Diazo type copying method |
JPS56100125A (en) * | 1980-01-14 | 1981-08-11 | Sumitomo Electric Ind Ltd | Manufacture of silicon carbide whisker |
JPS56100115A (en) * | 1980-01-14 | 1981-08-11 | Sumitomo Electric Ind Ltd | Manufacture of silicon nitride whisker |
-
1980
- 1980-12-12 JP JP55176244A patent/JPS57101000A/en active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4922320A (en) * | 1972-06-23 | 1974-02-27 | ||
JPS504480A (en) * | 1973-05-17 | 1975-01-17 | ||
JPS5417720A (en) * | 1977-07-08 | 1979-02-09 | Ricoh Co Ltd | Diazo type copying method |
JPS56100125A (en) * | 1980-01-14 | 1981-08-11 | Sumitomo Electric Ind Ltd | Manufacture of silicon carbide whisker |
JPS56100115A (en) * | 1980-01-14 | 1981-08-11 | Sumitomo Electric Ind Ltd | Manufacture of silicon nitride whisker |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62158200A (en) * | 1985-12-30 | 1987-07-14 | アメリカ合衆国 | Manufacture of silicon carbide whisker and catalyst therefor |
JPS63159299A (en) * | 1986-12-20 | 1988-07-02 | Kobe Steel Ltd | Production of silicon carbide whisker |
JPH0351679B2 (en) * | 1986-12-20 | 1991-08-07 | Kobe Seikosho Kk | |
JPH01108108A (en) * | 1987-10-20 | 1989-04-25 | Agency Of Ind Science & Technol | Production of fibrous silicon-oxygen-carbon compound |
FR2684091A1 (en) * | 1991-11-21 | 1993-05-28 | Pechiney Recherche | PROCESS FOR MANUFACTURING METALLIC CARBIDE WITH HIGH SURFACE SPECIFIC UNDERWATER SWEEPING AT ATMOSPHERIC PRESSURE. |
CN109594100A (en) * | 2018-12-07 | 2019-04-09 | 东华大学 | A kind of C3N4Loaded Cu/Sn alloy material and its preparation and application |
Also Published As
Publication number | Publication date |
---|---|
JPS644999B2 (en) | 1989-01-27 |
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