JPS62167885A - Production of composite body having carbon film - Google Patents

Abstract

PURPOSE:To obtain a composite body having a hard carbon film with superior adhesion by converting a gaseous hydrocarbon such as acetylene into plasma with high frequency energy to forms a film of carbon having the structure of diamond on a substrate. CONSTITUTION:A gaseous hydrocarbon such as acetylene or methane is introduced into a reaction system and microwave or high frequency energy is supplied to the reaction system. The gas is converted into plasma with the energy to form a film of carbon having the structure of diamond as a reaction product on a substrate placed in the reaction system.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a carbon film having a diamond structure in a plasma atmosphere.

The present invention aims to produce a composite material that serves as a reinforcing material for glass plates and as a protective material against mechanical stress by coating the surface of glass, metal, or ceramics with carbon or a film containing carbon as a main component. Regarding the method.

The present invention introduces hydrocarbon gas such as acetylene or methane into a plasma atmosphere and decomposes it.
-C bonds, resulting in a conductive or poorly conductive carbon like graphite, with an optical energy band width (referred to as Eg) of 2. It is characterized by forming insulating carbon having a diamond structure similar to single-crystal diamond having a voltage of Oev or more, preferably 2.6 to 4.5 eV. Furthermore, the carbon of the present invention has a hardness of 4,500 Kg/mm or more, typically 6
It has a hardness of 500Kg/mm'' similar to diamond.The crystallographic structure is microcrystalline with a size of 5 to 200 people.Also, this carbon contains less than 25 mol% of hydrogen and halogen elements. At the same time, it contains an amount of

In addition, 5 mol% of valent or V-valent impurities are added to the carbon of the present invention.
It can be added below to have P or N type conductivity.

In the present invention, the temperature applied to the substrate when forming this carbon is 150 to 450°C, which is 500 to 1500°C compared to the temperature of the substrate used in the conventional CVD method.
Another feature is that it was formed at a low temperature.

In addition, the present invention eliminates boron, which is a valent impurity, to this carbon.
．． By adding P-type carbon to a concentration of 1 to 5 mol%, and also adding phosphorus, which is a V-valent impurity, to a concentration of 0.1 to 5 mol% to provide N-type carbon. Another feature is that the carbon on the upper surface of this substrate has semiconductivity due to valence electron control, which is different from that of graphite structure.

Furthermore, the present invention provides a PIN junction or NIP bond on this substrate.
By providing carbon with a junction, it is characterized by having semiconductor characteristics having diode characteristics.

Further, the present invention uses a substrate, particularly glass or ceramic,
Thereafter, a part of this substrate is selectively removed and provided as an inkjet nozzle or a nozzle for extracting quartz glass for optical communication.

Another feature of the present invention is that a carbon film is selectively provided on a glass substrate and used as a photomask for an electron beam exposure device or an ultraviolet exposure device.

Further, the composite of the present invention may be used as a valve, wear-resistant material, or P.
It is possible to apply it to a device as an IN type semiconductor, such as a light receiving or light emitting device.

The composite used in the present invention and the method for producing the composite will be described below according to the drawings.

Example 1 Figure 1 shows plasma CVD for forming carbon of the present invention.
An overview of the device is shown.

In the drawing, a hydrocarbon gas, such as acetylene, which is a reactive gas, is introduced from (8) through a valve and a flow meter (5) into an excitation chamber (4) in the reaction system. Furthermore, if necessary, the carrier gas is supplied with hydrogen or helium (7) through a valve and a flow meter (6), and similarly reaches the excitation chamber. When introducing an impurity having a valence of 1 or 2, such as diborane or phoshine, it may be added to the system in the same manner.

These reactive gases are activated, decomposed or reacted in an excitation chamber by applying 0.1 to 5 - energy by electromagnetic energy using a 2.45 GHz microwave.

Furthermore, this reactive gas is heated in a heating furnace (9) in a reactor (1).
heated to 150-450°C, and further heated to 13.56
Reacts and polymerizes with MHz high frequency energy (2),
Generates carbon with many C-C bonds. At this time, if the applied electromagnetic energy is small, carbon with an amorphous structure is produced. For this reason, the method of the present invention does not require this method. a Strong electromagnetic energy is applied to produce diamond-shaped microcrystalline carbon with a size of 5 to 200 people. This reaction is carried out by heating the heater (11) with the power source (13) and further heating the substrate (10) thereon. Then, a carbon film of the reaction product is formed as a film on the upper surface of this substrate. Unwanted substances after the reaction are exhausted from the exhaust port (12) via a rotary pump. Reaction chamber (1) is 0.001-10
torr is typically maintained at 0.1 to 0.5 torr, and a plasma state is generated in the reaction chamber (1) by the energy of microwaves (3) and high frequency waves (2). In particular, at frequencies above IGHz, hydrogen is separated from C-11 bonds, and at frequencies from 0.1 to 50 MHz, C=C bonds and C=C bonds are decomposed, and 〉C-C< bonds. Alternatively, -C-C- bonds were created, and the unpaired carbon bonds collided with each other to form a covalent bond, resulting in a stable diamond structure.

In this way, carbon, particularly carbon containing 25 mol % or less of hydrogen, or carbon having P, T or N type conductivity, was formed on a substrate having a surface made of glass, metal or ceramics.

As is clear from the above description, the present invention provides a film in which carbon or a film containing carbon as a main component is coated on the surface or inside of glass, metal, or ceramic.

This composite, as seen in many other examples, has countless applications, especially when this carbon is heated to 450°C.
It is characterized by its hardness and adhesion to the substrate, which are extremely low.

As the ceramic in the present invention, alumina, zirconia, or any material to which a rare earth element such as carbon or lanthanum is added can be used. Furthermore, as for metals, any material such as stainless steel, molybdenum, tungsten, etc. that can withstand temperatures of at least 300 to 450° C. can be used. Further, glass can be coated not only on quartz but also on soda glass, etc., and its applications are extremely wide.

[Brief explanation of drawings]

FIG. 1 shows an outline of a manufacturing apparatus for manufacturing carbon of the present invention on a surface to be formed.

Claims (1)

[Claims] 1. A carbon film having a diamond structure is formed by introducing a carbide gas such as acetylene or methane into a reaction system, and supplying microwave or high frequency energy to the gas to turn it into plasma. A method for producing a composite having a carbon film. 2. In claim 1, C-
H bond, C≡C bond, C=C bond from 0.001 to 10t
A method for producing a composite having a carbon film, characterized by decomposing it in a plasma atmosphere of orr to covalently bond dangling bonds of carbon to form a C--C bond.