JPS56100125A - Manufacture of silicon carbide whisker - Google Patents

Manufacture of silicon carbide whisker

Info

Publication number
JPS56100125A
JPS56100125A JP281780A JP281780A JPS56100125A JP S56100125 A JPS56100125 A JP S56100125A JP 281780 A JP281780 A JP 281780A JP 281780 A JP281780 A JP 281780A JP S56100125 A JPS56100125 A JP S56100125A
Authority
JP
Japan
Prior art keywords
gas
temp
furnace
tube
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP281780A
Other languages
Japanese (ja)
Inventor
Eiji Kamijo
Masayuki Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP281780A priority Critical patent/JPS56100125A/en
Publication of JPS56100125A publication Critical patent/JPS56100125A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain useful long sic whiskers in a high yield by heating fine grains of a mixture of SiO2 and metallic Si in an inert gas and treating the resulting SiO gas in a reaction tube having a descending temp. gradient under a CO gas or H2 gas atmosphere.
CONSTITUTION: Sample 1 prepared by mixing SiO2 with metallic Si or C is put into crucible 3 from hopper 2. Furnace 4A is kept at a high temp., and generated reactive gas 8 is carried to reaction tube 11 in furnace 4B connected to furnace 4A together with inert gas 6 fed from introduction pipe 7. Tube 11 has about 1,600W 1,200°C temp. gradient descending from the inlet toward the outlet. CO gas or H2 gas is introduced into tube 11 from introduction pipe 10 to form a reducing atmosphere. Reducing gas 9 and reactive gas 8 are brought into contact with each another in tube 11 to deposite and growsic whiskers 12. An electric resistance heating system is adopted for crystal growing furnace 4B to stably control the temp.
COPYRIGHT: (C)1981,JPO&Japio
JP281780A 1980-01-14 1980-01-14 Manufacture of silicon carbide whisker Pending JPS56100125A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP281780A JPS56100125A (en) 1980-01-14 1980-01-14 Manufacture of silicon carbide whisker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP281780A JPS56100125A (en) 1980-01-14 1980-01-14 Manufacture of silicon carbide whisker

Publications (1)

Publication Number Publication Date
JPS56100125A true JPS56100125A (en) 1981-08-11

Family

ID=11539952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP281780A Pending JPS56100125A (en) 1980-01-14 1980-01-14 Manufacture of silicon carbide whisker

Country Status (1)

Country Link
JP (1) JPS56100125A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57101000A (en) * 1980-12-12 1982-06-23 Sumitomo Electric Ind Ltd Preparation of ceramic whisker
JPS57111300A (en) * 1980-12-25 1982-07-10 Sumitomo Electric Ind Ltd Preparation of ceramic whisker
JPS61227997A (en) * 1985-03-29 1986-10-11 Hajime Saito Production of sic whisker
US4873070A (en) * 1986-12-17 1989-10-10 Kabushiki Kaisha Kobe Seiko Sho Process for producing silicon carbide whiskers
CN110592674A (en) * 2019-10-15 2019-12-20 中国民航大学 Micron-sized Cr3C2Preparation method of whisker

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5417720A (en) * 1977-07-08 1979-02-09 Ricoh Co Ltd Diazo type copying method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5417720A (en) * 1977-07-08 1979-02-09 Ricoh Co Ltd Diazo type copying method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57101000A (en) * 1980-12-12 1982-06-23 Sumitomo Electric Ind Ltd Preparation of ceramic whisker
JPS57111300A (en) * 1980-12-25 1982-07-10 Sumitomo Electric Ind Ltd Preparation of ceramic whisker
JPS61227997A (en) * 1985-03-29 1986-10-11 Hajime Saito Production of sic whisker
US4873070A (en) * 1986-12-17 1989-10-10 Kabushiki Kaisha Kobe Seiko Sho Process for producing silicon carbide whiskers
CN110592674A (en) * 2019-10-15 2019-12-20 中国民航大学 Micron-sized Cr3C2Preparation method of whisker

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