JPS56100125A - Manufacture of silicon carbide whisker - Google Patents
Manufacture of silicon carbide whiskerInfo
- Publication number
- JPS56100125A JPS56100125A JP281780A JP281780A JPS56100125A JP S56100125 A JPS56100125 A JP S56100125A JP 281780 A JP281780 A JP 281780A JP 281780 A JP281780 A JP 281780A JP S56100125 A JPS56100125 A JP S56100125A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- temp
- furnace
- tube
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain useful long sic whiskers in a high yield by heating fine grains of a mixture of SiO2 and metallic Si in an inert gas and treating the resulting SiO gas in a reaction tube having a descending temp. gradient under a CO gas or H2 gas atmosphere.
CONSTITUTION: Sample 1 prepared by mixing SiO2 with metallic Si or C is put into crucible 3 from hopper 2. Furnace 4A is kept at a high temp., and generated reactive gas 8 is carried to reaction tube 11 in furnace 4B connected to furnace 4A together with inert gas 6 fed from introduction pipe 7. Tube 11 has about 1,600W 1,200°C temp. gradient descending from the inlet toward the outlet. CO gas or H2 gas is introduced into tube 11 from introduction pipe 10 to form a reducing atmosphere. Reducing gas 9 and reactive gas 8 are brought into contact with each another in tube 11 to deposite and growsic whiskers 12. An electric resistance heating system is adopted for crystal growing furnace 4B to stably control the temp.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP281780A JPS56100125A (en) | 1980-01-14 | 1980-01-14 | Manufacture of silicon carbide whisker |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP281780A JPS56100125A (en) | 1980-01-14 | 1980-01-14 | Manufacture of silicon carbide whisker |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56100125A true JPS56100125A (en) | 1981-08-11 |
Family
ID=11539952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP281780A Pending JPS56100125A (en) | 1980-01-14 | 1980-01-14 | Manufacture of silicon carbide whisker |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56100125A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57101000A (en) * | 1980-12-12 | 1982-06-23 | Sumitomo Electric Ind Ltd | Preparation of ceramic whisker |
JPS57111300A (en) * | 1980-12-25 | 1982-07-10 | Sumitomo Electric Ind Ltd | Preparation of ceramic whisker |
JPS61227997A (en) * | 1985-03-29 | 1986-10-11 | Hajime Saito | Production of sic whisker |
US4873070A (en) * | 1986-12-17 | 1989-10-10 | Kabushiki Kaisha Kobe Seiko Sho | Process for producing silicon carbide whiskers |
CN110592674A (en) * | 2019-10-15 | 2019-12-20 | 中国民航大学 | Micron-sized Cr3C2Preparation method of whisker |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5417720A (en) * | 1977-07-08 | 1979-02-09 | Ricoh Co Ltd | Diazo type copying method |
-
1980
- 1980-01-14 JP JP281780A patent/JPS56100125A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5417720A (en) * | 1977-07-08 | 1979-02-09 | Ricoh Co Ltd | Diazo type copying method |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57101000A (en) * | 1980-12-12 | 1982-06-23 | Sumitomo Electric Ind Ltd | Preparation of ceramic whisker |
JPS57111300A (en) * | 1980-12-25 | 1982-07-10 | Sumitomo Electric Ind Ltd | Preparation of ceramic whisker |
JPS61227997A (en) * | 1985-03-29 | 1986-10-11 | Hajime Saito | Production of sic whisker |
US4873070A (en) * | 1986-12-17 | 1989-10-10 | Kabushiki Kaisha Kobe Seiko Sho | Process for producing silicon carbide whiskers |
CN110592674A (en) * | 2019-10-15 | 2019-12-20 | 中国民航大学 | Micron-sized Cr3C2Preparation method of whisker |
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