JPS56100115A - Manufacture of silicon nitride whisker - Google Patents
Manufacture of silicon nitride whiskerInfo
- Publication number
- JPS56100115A JPS56100115A JP281680A JP281680A JPS56100115A JP S56100115 A JPS56100115 A JP S56100115A JP 281680 A JP281680 A JP 281680A JP 281680 A JP281680 A JP 281680A JP S56100115 A JPS56100115 A JP S56100115A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- temp
- furnace
- tube
- nitriding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0685—Preparation by carboreductive nitridation
Abstract
PURPOSE: To obtain long Si3N4 whiskers in a high yield by heating fine grains of a mixture of SiO2 and metallic Si in an inert gas and treating the resulting SiO gas in a reaction tube having a descending temp. gradient under an N2 gas atmosphere.
CONSTITUTION: Sample 1 prepared by mixing SiO2 with metallic Si or C is put into crucible 3 from hopper 2. Furnace 4A is kept at a high temp., and generated reactive gas 8 is carried to reaction tube 11 made of carbon is furnace 4B connected to furnace 4A using inert gas 6 fed from introduction pipe 7 as a carrier gas. Tube 11 has about 1,600W1,200°C temp. gradient descending from the inlet toward the outlet. N-contg. nitriding gas 9 is introduced into tube 11 from introduction pipe 10 to form a nitriding atmosphere. Nitriding gas 9 and reactive gas 8 are brought into contact with each other in tube 11 to deposit and grow Si3N4 whiskers 12. An electric resistance heating system is adopted for crystal growing furnace 4B to stably control the temp.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP281680A JPS56100115A (en) | 1980-01-14 | 1980-01-14 | Manufacture of silicon nitride whisker |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP281680A JPS56100115A (en) | 1980-01-14 | 1980-01-14 | Manufacture of silicon nitride whisker |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56100115A true JPS56100115A (en) | 1981-08-11 |
Family
ID=11539923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP281680A Pending JPS56100115A (en) | 1980-01-14 | 1980-01-14 | Manufacture of silicon nitride whisker |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56100115A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57101000A (en) * | 1980-12-12 | 1982-06-23 | Sumitomo Electric Ind Ltd | Preparation of ceramic whisker |
JPS57111300A (en) * | 1980-12-25 | 1982-07-10 | Sumitomo Electric Ind Ltd | Preparation of ceramic whisker |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5417720A (en) * | 1977-07-08 | 1979-02-09 | Ricoh Co Ltd | Diazo type copying method |
-
1980
- 1980-01-14 JP JP281680A patent/JPS56100115A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5417720A (en) * | 1977-07-08 | 1979-02-09 | Ricoh Co Ltd | Diazo type copying method |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57101000A (en) * | 1980-12-12 | 1982-06-23 | Sumitomo Electric Ind Ltd | Preparation of ceramic whisker |
JPS57111300A (en) * | 1980-12-25 | 1982-07-10 | Sumitomo Electric Ind Ltd | Preparation of ceramic whisker |
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