JPS57175718A - Preparation of silicon carbide fine powder - Google Patents
Preparation of silicon carbide fine powderInfo
- Publication number
- JPS57175718A JPS57175718A JP56058481A JP5848181A JPS57175718A JP S57175718 A JPS57175718 A JP S57175718A JP 56058481 A JP56058481 A JP 56058481A JP 5848181 A JP5848181 A JP 5848181A JP S57175718 A JPS57175718 A JP S57175718A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma
- high frequency
- free
- inlet tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Carbon And Carbon Compounds (AREA)
Abstract
PURPOSE: To prepare fine silicon carbide powder suitable especially for sintering under normal pressure, by mixing raw material mixture gas with a plasma gas, introducing the mixture into the plasma flame through the inlet tube of the plasma gas, and decomposing and reacting the raw materials.
CONSTITUTION: Ar gas is introduced into the high frequency induction heating plasma furnace for synthesis of fine powder through the gas inlet tube 8, and high frequency voltage is imposed to the high frequency induction coil 3 to generate the hot plasma flame of Ar. On the other hand, an equi-molar mixture of, e.g. SiH4 and CH4 is introduced into the Ar plasma flame through the gas inlet tube 8 to synthesize the fine SiC powder. The produced SiC fine powder is almost free from the free C and free Si, and is suitable for the manufacturing of an SiC molded article by atmospheric sintering. In the figure, 1 is the raw material feeder 2, is plasma torch, 4 is gas quenching chamber, and 5 is metal block cooled with water.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56058481A JPS57175718A (en) | 1981-04-20 | 1981-04-20 | Preparation of silicon carbide fine powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56058481A JPS57175718A (en) | 1981-04-20 | 1981-04-20 | Preparation of silicon carbide fine powder |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57175718A true JPS57175718A (en) | 1982-10-28 |
Family
ID=13085616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56058481A Pending JPS57175718A (en) | 1981-04-20 | 1981-04-20 | Preparation of silicon carbide fine powder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57175718A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02232309A (en) * | 1989-03-04 | 1990-09-14 | Agency Of Ind Science & Technol | Manufacture of fe-si-c series super fine particles |
| US5178847A (en) * | 1988-11-30 | 1993-01-12 | Kemira Oy | Process for producing ceramic raw materials |
| SG111177A1 (en) * | 2004-02-28 | 2005-05-30 | Wira Kurnia | Fine particle powder production |
| CN100402423C (en) * | 2006-09-07 | 2008-07-16 | 郑州华硕精密陶瓷有限公司 | Rapid sintering method for sintering product of silicon carbide in normal pressure |
| CN102432012A (en) * | 2011-09-28 | 2012-05-02 | 上海交通大学 | Method for synthesizing silicon carbide nanometer needle without catalysts |
-
1981
- 1981-04-20 JP JP56058481A patent/JPS57175718A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5178847A (en) * | 1988-11-30 | 1993-01-12 | Kemira Oy | Process for producing ceramic raw materials |
| JPH02232309A (en) * | 1989-03-04 | 1990-09-14 | Agency Of Ind Science & Technol | Manufacture of fe-si-c series super fine particles |
| SG111177A1 (en) * | 2004-02-28 | 2005-05-30 | Wira Kurnia | Fine particle powder production |
| CN100402423C (en) * | 2006-09-07 | 2008-07-16 | 郑州华硕精密陶瓷有限公司 | Rapid sintering method for sintering product of silicon carbide in normal pressure |
| CN102432012A (en) * | 2011-09-28 | 2012-05-02 | 上海交通大学 | Method for synthesizing silicon carbide nanometer needle without catalysts |
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