JPS5567514A - High purity alpha-type silicon nitride and production thereof - Google Patents

High purity alpha-type silicon nitride and production thereof

Info

Publication number
JPS5567514A
JPS5567514A JP13666678A JP13666678A JPS5567514A JP S5567514 A JPS5567514 A JP S5567514A JP 13666678 A JP13666678 A JP 13666678A JP 13666678 A JP13666678 A JP 13666678A JP S5567514 A JPS5567514 A JP S5567514A
Authority
JP
Japan
Prior art keywords
silicon nitride
type silicon
high purity
content
contg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13666678A
Other languages
Japanese (ja)
Other versions
JPS5930645B2 (en
Inventor
Kiyoshi Kasai
Takaaki Tsukidate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Toyo Soda Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Soda Manufacturing Co Ltd filed Critical Toyo Soda Manufacturing Co Ltd
Priority to JP53136666A priority Critical patent/JPS5930645B2/en
Publication of JPS5567514A publication Critical patent/JPS5567514A/en
Publication of JPS5930645B2 publication Critical patent/JPS5930645B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon

Abstract

PURPOSE: To obtain high purity, high strength α-type silicon nitride with an α- phase crystal content of 95% or more by heating a nitrogencontg. silane cpd. at 1300W1600°C in a furnace made of non-oxide material such as silicon nitride or silicon carbide.
CONSTITUTION: Gaseous silicon tetrachloride and ammonia are reacted in an inert atmosphere at such a low temp. as -30W70°C. The resulting nitrogen-contg. silane cpd. such as tetramidomonosilane or diimidomonosilane is heated to 1300W 1600°C in a furnace made of non-oxide material such as silicon nitride, silicon carbide or carbon, and it is thermally decomposed while feeding an inert gas such as Ar or N2 to obtain novel α-type silicon nitride having an oxygen content of 1% or less, a nitrogen content of 38% or more and an α-phase crystal content of 95% or more, contg. very little metallic impurities, and suitable for use as a material for a gas turbine, etc. requiring high strength and high thermal and mechanical impact resistance.
COPYRIGHT: (C)1980,JPO&Japio
JP53136666A 1978-11-08 1978-11-08 Manufacturing method of high purity α-type silicon nitride Expired JPS5930645B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53136666A JPS5930645B2 (en) 1978-11-08 1978-11-08 Manufacturing method of high purity α-type silicon nitride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53136666A JPS5930645B2 (en) 1978-11-08 1978-11-08 Manufacturing method of high purity α-type silicon nitride

Publications (2)

Publication Number Publication Date
JPS5567514A true JPS5567514A (en) 1980-05-21
JPS5930645B2 JPS5930645B2 (en) 1984-07-28

Family

ID=15180648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53136666A Expired JPS5930645B2 (en) 1978-11-08 1978-11-08 Manufacturing method of high purity α-type silicon nitride

Country Status (1)

Country Link
JP (1) JPS5930645B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5891016A (en) * 1981-11-26 1983-05-30 Denki Kagaku Kogyo Kk Manufacture of silicon nitride powder with high density and high sinterability
JPS58199707A (en) * 1982-05-18 1983-11-21 Ube Ind Ltd Manufacture of crystalline silicon nitride powder
FR2537569A1 (en) * 1982-12-08 1984-06-15 Toyo Soda Mfg Co Ltd PROCESS FOR THE PREPARATION OF A SILICON NITRIDE POWDER HAVING PROPERTIES FOR SINTERING
US4515755A (en) * 1981-05-11 1985-05-07 Toshiba Ceramics Co., Ltd. Apparatus for producing a silicon single crystal from a silicon melt
US4929432A (en) * 1988-10-19 1990-05-29 Union Carbide Corporation Process for producing crystalline silicon nitride powder

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62160046A (en) * 1985-12-30 1987-07-16 Mitsuba Electric Mfg Co Ltd Armature of generator

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53102300A (en) * 1977-02-18 1978-09-06 Toshiba Corp Preparation of type silicon nitride powders

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53102300A (en) * 1977-02-18 1978-09-06 Toshiba Corp Preparation of type silicon nitride powders

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4515755A (en) * 1981-05-11 1985-05-07 Toshiba Ceramics Co., Ltd. Apparatus for producing a silicon single crystal from a silicon melt
JPS5891016A (en) * 1981-11-26 1983-05-30 Denki Kagaku Kogyo Kk Manufacture of silicon nitride powder with high density and high sinterability
JPS58199707A (en) * 1982-05-18 1983-11-21 Ube Ind Ltd Manufacture of crystalline silicon nitride powder
FR2537569A1 (en) * 1982-12-08 1984-06-15 Toyo Soda Mfg Co Ltd PROCESS FOR THE PREPARATION OF A SILICON NITRIDE POWDER HAVING PROPERTIES FOR SINTERING
US4929432A (en) * 1988-10-19 1990-05-29 Union Carbide Corporation Process for producing crystalline silicon nitride powder

Also Published As

Publication number Publication date
JPS5930645B2 (en) 1984-07-28

Similar Documents

Publication Publication Date Title
JPS5595605A (en) High purity silicon nitride and production thereof
DE3571602D1 (en) Method for preparing sintered body containing cubic boron nitride and method for preparing cubic boron nitride
JPS55113603A (en) Manufacture of alpha silicon nitride powder
EP0300601A3 (en) Process for the production of sintered aluminium nitrides
JPS56100114A (en) Alpha-type silicon nitride of high purity and its manufacture
GB1306988A (en) Reaction vessels for the preparation of semiconductor devices
GB1236913A (en) Manufacture of silicon carbide
JPS5567514A (en) High purity alpha-type silicon nitride and production thereof
GB2023185A (en) Co-sintered Silicon Carbide- aluminium Nitride Products and a Method for their Production
JPH02188412A (en) Manufacture of crystal silicon nitride powder
EP0231130A3 (en) Sintered silicon nitride ceramic article and method for production thereof
JPS53133600A (en) Production of silicon nitride
JPS5562804A (en) Production of nitride
Tressler et al. Oxidation of silicon carbide ceramics
JPS6461307A (en) Production of beta-type silicon carbide fine powder
GB1212848A (en) Process for heating oxygen to high temperatures
JPS6476905A (en) Production of nitride
Pugar High Purity Silicon Nitride
JPS5622618A (en) Continuous manufacture of sic
JPS6437413A (en) Production of ultrafine particle of silicon boride
Miyake et al. On the carbothermic reduction of WO3 powder in nitrogen atmosphere
Okamura et al. Continuous Inorganic Fiber Consisting of Silicon, Nitrogen and Oxygen and a Method of Producing the Same
HUANG PREPARATION OF ALUMINIUM NITRIDE POWDER
KR900001593A (en) Method for Producing Silicon Carbide-Coated Graphite by Controlling SiO Generation Rate
Stolar et al. Kinetics of Carbon Mass Transfer in Carburizing and Carbonitriding Atmospheres