JPS5567514A - High purity alpha-type silicon nitride and production thereof - Google Patents
High purity alpha-type silicon nitride and production thereofInfo
- Publication number
- JPS5567514A JPS5567514A JP13666678A JP13666678A JPS5567514A JP S5567514 A JPS5567514 A JP S5567514A JP 13666678 A JP13666678 A JP 13666678A JP 13666678 A JP13666678 A JP 13666678A JP S5567514 A JPS5567514 A JP S5567514A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- type silicon
- high purity
- content
- contg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
Abstract
PURPOSE: To obtain high purity, high strength α-type silicon nitride with an α- phase crystal content of 95% or more by heating a nitrogencontg. silane cpd. at 1300W1600°C in a furnace made of non-oxide material such as silicon nitride or silicon carbide.
CONSTITUTION: Gaseous silicon tetrachloride and ammonia are reacted in an inert atmosphere at such a low temp. as -30W70°C. The resulting nitrogen-contg. silane cpd. such as tetramidomonosilane or diimidomonosilane is heated to 1300W 1600°C in a furnace made of non-oxide material such as silicon nitride, silicon carbide or carbon, and it is thermally decomposed while feeding an inert gas such as Ar or N2 to obtain novel α-type silicon nitride having an oxygen content of 1% or less, a nitrogen content of 38% or more and an α-phase crystal content of 95% or more, contg. very little metallic impurities, and suitable for use as a material for a gas turbine, etc. requiring high strength and high thermal and mechanical impact resistance.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53136666A JPS5930645B2 (en) | 1978-11-08 | 1978-11-08 | Manufacturing method of high purity α-type silicon nitride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53136666A JPS5930645B2 (en) | 1978-11-08 | 1978-11-08 | Manufacturing method of high purity α-type silicon nitride |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5567514A true JPS5567514A (en) | 1980-05-21 |
JPS5930645B2 JPS5930645B2 (en) | 1984-07-28 |
Family
ID=15180648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53136666A Expired JPS5930645B2 (en) | 1978-11-08 | 1978-11-08 | Manufacturing method of high purity α-type silicon nitride |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5930645B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5891016A (en) * | 1981-11-26 | 1983-05-30 | Denki Kagaku Kogyo Kk | Manufacture of silicon nitride powder with high density and high sinterability |
JPS58199707A (en) * | 1982-05-18 | 1983-11-21 | Ube Ind Ltd | Manufacture of crystalline silicon nitride powder |
FR2537569A1 (en) * | 1982-12-08 | 1984-06-15 | Toyo Soda Mfg Co Ltd | PROCESS FOR THE PREPARATION OF A SILICON NITRIDE POWDER HAVING PROPERTIES FOR SINTERING |
US4515755A (en) * | 1981-05-11 | 1985-05-07 | Toshiba Ceramics Co., Ltd. | Apparatus for producing a silicon single crystal from a silicon melt |
US4929432A (en) * | 1988-10-19 | 1990-05-29 | Union Carbide Corporation | Process for producing crystalline silicon nitride powder |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62160046A (en) * | 1985-12-30 | 1987-07-16 | Mitsuba Electric Mfg Co Ltd | Armature of generator |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53102300A (en) * | 1977-02-18 | 1978-09-06 | Toshiba Corp | Preparation of type silicon nitride powders |
-
1978
- 1978-11-08 JP JP53136666A patent/JPS5930645B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53102300A (en) * | 1977-02-18 | 1978-09-06 | Toshiba Corp | Preparation of type silicon nitride powders |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4515755A (en) * | 1981-05-11 | 1985-05-07 | Toshiba Ceramics Co., Ltd. | Apparatus for producing a silicon single crystal from a silicon melt |
JPS5891016A (en) * | 1981-11-26 | 1983-05-30 | Denki Kagaku Kogyo Kk | Manufacture of silicon nitride powder with high density and high sinterability |
JPS58199707A (en) * | 1982-05-18 | 1983-11-21 | Ube Ind Ltd | Manufacture of crystalline silicon nitride powder |
FR2537569A1 (en) * | 1982-12-08 | 1984-06-15 | Toyo Soda Mfg Co Ltd | PROCESS FOR THE PREPARATION OF A SILICON NITRIDE POWDER HAVING PROPERTIES FOR SINTERING |
US4929432A (en) * | 1988-10-19 | 1990-05-29 | Union Carbide Corporation | Process for producing crystalline silicon nitride powder |
Also Published As
Publication number | Publication date |
---|---|
JPS5930645B2 (en) | 1984-07-28 |
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